相关论文: Magnetic Domain Wall Engineering in a Nanoscale Pe…

We have obtained microscopic evidence of the influence of domain wall stray fields on the nanosecond magnetization switching in magnetic trilayer systems. The nucleation barrier initiating the magnetic switching of the soft magnetic…

Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in…

We report several procedures for the robust nucleation of magnetic domain walls in cylindrical permalloy nanowires. Specific features of the magnetic force microscopy contrast of such soft wires are discussed, with a view to avoid the…

Magnetic domain walls (DWs) in nanostructures are low-dimensional objects that separate regions with uniform magnetisation. Since they can have different shapes and widths, DWs are an exciting playground for fundamental research, and became…

Magnetic domain walls play a critical role in the nanoscale evolution of magnetic devices. Despite the early efforts, a complete understanding of the micromagnetic evolution of the width and the type of magnetic domain walls has still…

We report on the evolution of ferromagnetic domain walls during magnetization reversal in elastically coupled ferromagnetic-ferroelectric heterostructures. Using optical polarization microscopy and micromagnetic simulations, we demonstrate…

Mechanically bent nickel nanowires show clear features in their room temperature magnetoresistance when a domain wall is pinned at the location of the bend. By varying the direction of an applied magnetic field, the wire can be prepared…

Magnetic domain walls have been studied in micrometer-sized Fe20Ni80 elements containing geometrical constrictions by spin-polarized scanning electron microscopy and numerical simulations. By controlling the constriction dimensions, the…

Use of a spin polarized current for the manipulation of magnetic domain walls in ferromagnetic nanowires has been the subject of intensive research for many years. Recently, due to technological advancements, creating nano-contacts with…

Domain walls in soft permalloy strips may exhibit various equilibrium micromagnetic structures depending on the width and thickness of the strip, ranging from the well-known transverse and vortex walls in narrow and thin strips to double…

The Dzyaloshinskii Moriya Interaction (DMI) has laid the foundation for many novel chiral structures such as Skyrmions. In most of the studies so far, the DMI is present in the whole of the magnetic layer. Here, we report our investigations…

Micromagnetic instabilities and non-uniform magnetization states play a significant role in spin transfer induced switching of nanometer scale magnetic elements. Here we model domain wall mediated switching dynamics in perpendicularly…

Using Lorentz transmission electron microscopy we investigate the behavior of domain walls pinned at non-topographic defects in Cr(3 nm)/Permalloy(10 nm)/Cr(5 nm) nanowires of width 500 nm. The pinning sites consist of linear defects where…

The domain wall nucleation and motion processes in Permalloy nanowires with a thickness gradient along the nanowire axis have been studied. Nanowires with widths, w = 250 nm to 3 um and a base thickness of t = 10 nm were fabricated by…

The magnetostatic interaction between two oppositely charged transverse domain walls (DWs)in adjacent Permalloy nanowires is experimentally demonstrated. The dependence of the pinning strength on wire separation is investigated for…

Time-resolved pump-probe soft X-ray ptychography and Scanning Transmission X-ray Microscopy (STXM) were employed to study the magnetic domain wall dynamics in microstructures of permalloy (Ni$_{81}$Fe$_{19}$; Py) with a weak growth-induced…

Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…

Domain-wall memory (DWM) has SRAM class access performance, low energy, high endurance, high density, and CMOS compatibility. Recently, shift reliability and processing-using-memory (PuM) proposals developed a need to count the number of…

Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer…

Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable…