相关论文: Robust Low-Bias Negative Differential Resistance i…

We theoretically investigate negative differential resistance (NDR) for ballistic transport in semiconducting armchair graphene nanoribbon (aGNR) superlattices (5 to 20 barriers) at low bias voltages V_SD < 500 mV. We combine the graphene…

In this paper, we report on the controllable negative differential resistance (NDR) in a proposed planar graphene superlattice structure. High value of peak to valley ratio (PVR) is predicted. This is significant because of appearance of…

We theoretically investigate negative differential resistance (NDR) of massless and massive Dirac Fermions in double barrier resonant tunneling diodes based on sufficiently short and wide graphene strips. The current-voltage characteristics…

The negative differential resistance (NDR) tunnel diodes are promising alternative devices for beyond-CMOS computing as they offer several potential applications when integrated with transistors. We propose a novel semiconductor-free NDR…

We propose a graphene device that can generate spin-dependent negative differential resistance (NDR). The device is composed of a sufficiently wide and short graphene and two gated EuO strips deposited on top of it. This scheme avoids…

Negative differential resistance (NDR) with room temperature peak-valley-ratio of 8 has been observed in a ballistic field-effect-transistor (FET) based on graphene, having an oblique top gate. Graphene FETs with a top gate inclination…

Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical…

Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its…

Field effect transistors with channels made of graphene layer(s) were explored. The graphene layer(s) contacted a distributed array of well-separated semiconductor quantum dots (QDs). The dots were embedded in nano-structured hole-array;…

Hexagonal boron nitride (hBN) is drawing increasing attention as an insulator and substrate material to develop next generation graphene-based electronic devices. In this paper, we investigate the quantum transport in heterostructures…

Graphene nanoribbons with armchair edges (AGNRs) have bandgaps that can be flexibly tuned via the ribbon width. A junction made of a narrower AGNR sandwiched between two wider AGNR leads was recently reported to possess two perfect…

High performance devices consisting of interdigitated electrodes (IDEs) on top of single-layer graphene (SLG) are candidates with favorable prospects for sensing applications. Graphene micro ribbons (GMRs) of various widths and IDE design…

We simulate quantum transport between a graphene nanoribbon (GNR) and a single-walled carbon nanotube (CNT) where electrons traverse vacuum gap between them. The GNR covers CNT over a nanoscale region while their relative rotation is 90…

Down-scaling device dimensions to the nanometer range raises significant challenges to traditional device design, due to potential current leakage across nanoscale dimensions and the need to maintain reproducibility while dealing with…

We have elaborately studied the electronic structure of 555-777 divacancy (DV) defected armchair edged graphene nanoribbon (AGNR) and transport properties of AGNR based two-terminal device constructed with one defected electrode and one N…

Two-dimensional (2D) semiconductors have emerged as leading candidates for the development of low-power and multifunctional computing applications, thanks to their qualities such as layer-dependent band gap tunability, high carrier…

We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance…

In this letter, we propose the resonant tunneling diode (RTD) based on a double-barrier graphene/boron nitride (BN) heterostructure as device suitable to take advantage of the elaboration of atomic sheets containing different domains of BN…

We present an analytical device model for a field-effect transistor based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrate (the back gate) and the top gate controlling the…

The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we…