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Current-controlled (also known as "S-type") negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental…

介观与纳米尺度物理 · 物理学 2019-01-23 Miao Wang , Chengyu Wang , Chenchen Wu , Qiao Li , Chen Pan , Cong Wang , Shi-Jun Liang , Feng Miao

Transition metal dichalcogenides (TMDs) are interesting for understanding fundamental physics of two-dimensional materials (2D) as well as for many emerging technologies, including spin electronics. Here, we report the discovery of…

Associating the presence of atomic vacancies to excited-state transport phenomena in two dimensional semiconductors is of emerging interest, and demands detailed understanding of the involved exciton transitions. Here we study the effect of…

介观与纳米尺度物理 · 物理学 2023-10-05 Daniel Hernangómez-Pérez , Amir Kleiner , Sivan Refaely-Abramson

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) and black phosphorus (BP) have beneficial electronic, optical, and physical properties at the few-layer limit. As atomically thin materials, 2D TMDCs and BP are…

材料科学 · 物理学 2016-03-30 Christopher R. Ryder , Joshua D. Wood , Spencer A. Wells , Mark C. Hersam

Small-twist-angle transition metal dichalcogenide (TMD) heterobilayers develop isolated flat moir\'e bands that are approximately described by triangular lattice generalized Hubbard models [PhysRevLett.121.026402]. In this article we…

强关联电子 · 物理学 2021-12-16 Nai Chao Hu , Allan H. MacDonald

Deep learning models are widely used for the data-driven design of materials based on atomic force microscopy (AFM) and other scanning probe microscopy. These tools enhance efficiency in inverse design and characterization of materials.…

材料科学 · 物理学 2024-12-12 Isaiah A. Moses , Wesley F. Reinhart

Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined…

介观与纳米尺度物理 · 物理学 2020-03-04 Gang Luo , Zhuo-Zhi Zhang , Hai-Ou Li , Xiang-Xiang Song , Guang-Wei Deng , Gang Cao , Ming Xiao , Guo-Ping Guo

Transition metal dichalcogenides (TMDs) display a rich variety of instabilities such as spin and charge orders, Ising superconductivity and topological properties. Their physical properties can be controlled by doping in electric…

Two-dimensional (2D) layered transition metal dichalcogenides (TMDCs) are promising memristive materials for neuromorphic computing systems as they could solve the problem of the excessively high energy consumption of conventional von…

应用物理 · 物理学 2025-05-21 Benjamin Spetzler , Dilara Abdel , Frank Schwierz , Martin Ziegler , Patricio Farrell

Two-dimensional (2D) transition metal dichalcogenide (TMD) van der Waals heterostructures (vdWHs) hold promise for high-performance electronics, but their large-scale synthesis remains limited by size constraints and alloying…

材料科学 · 物理学 2026-02-26 Luneng Zhao , Hongsheng Liu , Yuan Chang , Xiaoran Shi , Jijun Zhao , Feng Ding , Junfeng Gao

Defects usually play an important role in tuning and modifying various properties of semiconducting or insulating materials. Therefore we study the impact of point and line defects on the electronic structure and optical properties of MoS2…

介观与纳米尺度物理 · 物理学 2017-04-26 Jens Kunstmann , Tsegabirhan B. Wendumu , Gotthard Seifert

Transition metal dichalcogenides (TMDs) hold relevance for spin-triplet superconducting phases due to their inherent Ising spin-orbit coupling, but the majority of studies have so far focused on oversimplified models. In this work, we…

超导电性 · 物理学 2026-01-30 Florian Kayatz , Annica M. Black-Schaffer , Jorge Cayao

In recent years, a lot of scientific research effort has been put forth for the investigation of Transition Metal Dichalcogenides (TMDC) and other Two Dimensional (2D) materials like Graphene, Boron Nitride. Theoretical investigation on the…

计算物理 · 物理学 2018-02-27 Kanak Datta , Quazi D. M. Khosru

Transition-metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS2), are expected to be promising for next generation device applications. The existence of sulfur vacancies formed in MoS2, however, will potentially make devices…

材料科学 · 物理学 2016-12-23 Nan Fang , Kosuke Nagashio , Akira Toriumi

The 2D semiconducting transition metal dichalcogenides (e.g., WS2) host strong coupling between various degrees of freedom leading to potential applications in next-generation device applications including optoelectronics. Such applications…

介观与纳米尺度物理 · 物理学 2023-11-16 Suvodeep Paul , Saheb Karak , Saswata Talukdar , Devesh Negi , Surajit Saha

We study the conduction band spin splitting that arises in transition metal dichalcogenide (TMD) semiconductor monolayers such as MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$ due to the combination of spin-orbit coupling and lack of inversion…

材料科学 · 物理学 2014-01-01 K. Kośmider , J. W. González , J. Fernández-Rossier

Before assessing the suitability of a semiconductor for specific applications, the first question to ask is whether it possesses a direct or indirect band gap. This distinction is fundamental, as the operation of devices such as…

The moir\'e superlattices formed by stacking 2D semiconducting transition metal dichalcogenides (TMDs) with twisting angle or lattice mismatch have provided a versatile platform with unprecedented tunability for exploring many frontier…

介观与纳米尺度物理 · 物理学 2025-08-07 Dawei Zhai , Hongyi Yu , Wang Yao

Monolayer transition metal dichalcogenides recently emerge as a new family of two-dimensional material potentially suitable for numerous applications in electronic and optoelectronic devices due to the presence of finite band gap. Many…

材料科学 · 物理学 2014-01-21 Yongqing Cai , Zhaoqiang Bai , Hui Pan , Yuan Ping Feng , Boris I. Yakobson , Yong-Wei Zhang

Low-dimensional (LD) transition metal dichalcogenides (TMDs) in the form of nanoflakes, which consist of one or several layers, are the subject of intensive fundamental and applied research. Due to the size-induced transition from a bulk to…