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The emergence of transition metal dichalcogenides (TMD) as crystalline atomically thin semiconductors has created a tremendous amount of scientific and technological interest. Many novel device concepts have been proposed and realized…

介观与纳米尺度物理 · 物理学 2020-10-19 Woojoo Lee , Yi Lin , Li-Shuan Lu , Wei-Chen Chueh , Mengke Liu , Xiaoqin Li , Wen-Hao Chang , Robert A. Kaindl , Chih-Kang Shih

Two-dimensional van der Waals heterostructures are potential game changers both in understanding the fundamental physics and in the realization of various devices that exploit magnetism at the nanoscale. Multiferroic heterostructures…

材料科学 · 物理学 2024-12-12 Himangshu Sekhar Sarma , Subhradip Ghosh

Electrostatic gating provides a way to obtain key functionalities in modern electronic devices and to qualitatively alter materials properties. While electrostatic description of such gating gives guidance for related doping effects,…

材料科学 · 物理学 2016-06-08 Predrag Lazic , Kirill D. Belashchenko , Igor Zutic

Studying the atomic structure of intrinsic defects in two-dimensional transition metal dichalcogenides is difficult since they damage quickly under the intense electron irradiation in transmission electron microscopy (TEM). However, this…

Recently, a covalent-like quasi-bonding was unveiled for the inter-chain interaction in a promising semiconductor, few-layer Tellurium. Such quasi-bond offers comparable bond lengths and strengths with those of a typical Te-Te covalent…

材料科学 · 物理学 2019-03-19 Cong Wang , Jingsi Qiao , Yuhao Pan , Linwei Zhou , Xianghua Kong , Zhihai Cheng , Yang Chai , Wei Ji

Two-dimensional transition metal dichalcogenides (TMDs) offer tunable optical and electronic properties, making them highly promising for next-generation optoelectronic devices. One effective approach to engineering these properties is…

Symmetry-lowering structural phase transitions result in multiple degenerate structures whose coexistence is determined by macroscopic strain compatibility. In quantum materials, these structural transformations often couple to electronic…

Competing electronic phases in two-dimensional transition metal dichalcogenides constitute a fertile platform for uncovering emergent ground states and elucidating the control parameters that govern the correlated electron phases. Among…

其他凝聚态物理 · 物理学 2026-03-05 Ishita Pushkarna , Árpád Pásztor , Greta Lupi , Adolfo O. Fumega , Christoph Renner

We report in-situ Raman scattering studies of electrochemically top gated VO$_2$ thin film to address metal-insulator transition (MIT) under gating. The room temperature monoclinic insulating phase goes to metallic state at a gate voltage…

强关联电子 · 物理学 2016-07-25 Satyendra Nath Gupta , Anand Pal , D. V. S. Muthu , P. S. Anil Kumar , A. K. Sood

We present the first review of the current state of the literature on electronic properties and phase transitions in TlX and TlMX2 (M = Ga, In; X = Se, S, Te) compounds. These chalcogenides belong to a family of the low-dimensional…

其他凝聚态物理 · 物理学 2008-07-21 A. M. Panich

Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However,…

Defects can strongly influence the electronic, optical and mechanical properties of 2D materials, making defect stability under different thermodynamic conditions crucial for material-property engineering. In this paper, we present an…

材料科学 · 物理学 2023-08-10 Alaa Akkoush , Yair Litman , Mariana Rossi

We report gate-controlled quantum-dot transport in a trilayer MoSe2 device that combines a graphite back gate beneath the active region, a separate global gate for conductive access regions, and local top finger gates. In the low-backgate…

Atomic-scale control of light-matter interactions represent the ultimate frontier for many applications in photonics and quantum technology. Two-dimensional semiconductors, including transition metal dichalcogenides, are a promising…

介观与纳米尺度物理 · 物理学 2024-08-22 John M. Woods , Saroj B. Chand , Enrique Mejia , Takashi Taniguchi , Kenji Watanabe , Johannes Flick , Gabriele Grosso

The transition between gapped (semiconducting) and gapless (metallic) phases and tunability of bandgap in materials is a very lucrative yet considerably challenging goal for new-age device preparation. For bulk materials and for…

强关联电子 · 物理学 2022-02-08 Rudranil Basu , Swastibrata Bhattacharyya

As machine learning becomes increasingly important in engineering and science, it is inevitable that machine learning techniques will be applied to the investigation of materials, and in particular the structural phase transitions common in…

材料科学 · 物理学 2021-03-30 Jiale Zhang , Danni Wei , Feng Zhang , Xi Chen , Dawei Wang

Starting from graphene, 2D layered materials family has been recently set up more than 100 different materials with variety of different class of materials such as semiconductors, metals, semimetals, superconductors. Among these materials,…

材料科学 · 物理学 2021-09-16 Merve Acar , Emre Gur

Wigner crystals are typically confined to ultralow temperatures where thermal motion is frozen out. Moir\'e superlattices in twisted two-dimensional materials have extended their stability to higher temperatures and densities, but rely on…

Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene,…

介观与纳米尺度物理 · 物理学 2012-09-17 Han Wang , Lili Yu , Yi-Hsien Lee , Yumeng Shi , Allen Hsu , Matthew Chin , Lain-Jong Li , Madan Dubey , Jing Kong , Tomas Palacios

The layered transition metal chalcogenides have been a fertile land in solid state physics for many decades. Various MX2-type transition metal dichalcogenides, such as WTe2, IrTe2, and MoS2, have triggered great attention recently, either…

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