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相关论文: Structural Semiconductor-to-Semimetal Phase Transi…

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We investigate the design of steep-slope metal-oxide-semiconductor field-effect transistors (MOSFETs) exploiting monolayers of transition metal dihalides as channel materials. With respect to other previously proposed steep-slope…

介观与纳米尺度物理 · 物理学 2021-06-24 Demetrio Logoteta , Jiang Cao , Marco Pala , Paolo Marconcini , Giuseppe Iannaccone

We report on the various types of Peierls like two dimensional structural modulations and relative phase stability of 2H and 1T poly-types in MoS2-ReS2 and WS2-ReS2 alloy system. Theoretical calculation predicts a polytype phase transition…

The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental…

介观与纳米尺度物理 · 物理学 2016-07-26 Di Wu , Xiao Li , Lan Luan , Xiaoyu Wu , Wei Li , Maruthi N. Yogeesh , Rudresh Ghosh , Zhaodong Chu , Deji Akinwande , Qian Niu , Keji Lai

Two mechanisms that drive metal-to-semiconductor transitions in single-walled carbon nanotubes are theoretically analyzed through a simple tight-binding model. By considering simple structural trends, the results demonstrate that…

材料科学 · 物理学 2007-05-23 Jun-Qiang Lu , Jian Wu , Wenhui Duan , Bing-Lin Gu , H. T. Johnson

Electronic and topological properties of materials are derived from the interplay between crystalline symmetry and dimensionality. Simultaneously introducing 'forbidden' symmetries via quasiperiodic ordering with low-dimensionality into a…

材料科学 · 物理学 2022-06-01 Jeffrey D. Cain , Amin Azizi , Matthias Conrad , Sinéad M. Griffin , Alex Zettl

Ideal monolayers of common semiconducting transition metal dichalcogenides (TMDCs) such as MoS$_2$, WS$_2$, MoSe$_2$, and WSe$_2$ possess many similar electronic properties. As it is the case for all semiconductors, however, the physical…

Transition metal dichalcogenides exhibit a wide range of semiconducting, metallic, correlated, and topological electronic states that arise from strong coupling between lattice structure, dimensionality, and electronic degrees of freedom.…

材料科学 · 物理学 2026-05-19 Anzar Ali , Md Ezaz Hasan Khan , Mahmoud Abdel-Hafiez

We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front and back gate voltages. Temperature dependence of…

介观与纳米尺度物理 · 物理学 2016-10-31 Kyoichi Suzuki , Yuichi Harada , Koji Onomitsu , Koji Muraki

In search of an improved strategy to form low resistance contacts to MoS2 and related semiconducting transition metal dichalcogenides, we use ab initio density functional electronic structure calculations in order to determine the…

介观与纳米尺度物理 · 物理学 2019-05-03 Zhibin Gao , Zhixian Zhou , David Tomanek

The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The…

Two-dimensional materials (2DM) and their derived heterostructures have electrical and optical properties that are widely tunable via several approaches, most notably electrostatic gating and interfacial engineering such as twisting. While…

Controlling collective electronic phases in low-dimensional materials is a central challenge for developing technologies based on charge-density waves. Here, we report that perpendicular electric and magnetic fields can be used to tune…

Due to the distinguished properties offered by different structural phases of monolayer MoS2, phase engineering design are urgently required for achieving switchable structural phase. Strain engineering is widely accepted as a clean and…

材料科学 · 物理学 2017-03-14 Bin Ouyang , Shiyun Xiong , Zhi Yang , Yuhang Jing , Yongjie Wang

Transition metal dichalcogenides (TMDs) host multiple competing structural and electronic phases, making them an ideal platform for constructing polytype heterostructures with emergent quantum properties. However, controlling phase…

We have examined the electronic structure evolution in transition metal dichalcogenides MX$_2$, where M=Mo,W and X=S,Se and Te. These are generally referred to as van der Waals heterostructures on the one hand, yet one has band gap changes…

介观与纳米尺度物理 · 物理学 2024-02-02 S. K. Pandey , Ruma Das , Priya Mahadevan

Strongly bound excitons confined in two-dimensional (2D) semiconductors are dipoles with a perfect in-plane orientation. In a vertical stack of semiconducting 2D crystals, such in-plane excitonic dipoles are expected to efficiently couple…

Transition metal dichalcogenides (TMD) monolayers, holding potential as good sunlight absorbers, are promising materials for next-generation optoelectronic devices. They may enable ultrathin photovoltaic(PV) devices thanks to their…

材料科学 · 物理学 2022-11-28 C. Attaccalite , M. S. Prete , M. Palummo , O. Pulci

Coulomb interactions among electrons and holes in two-dimensional (2D) semimetals with overlapping valence and conduction bands can give rise to a correlated insulating ground state via exciton formation and condensation. One candidate…

We describe a facile technique based on polymer encapsulation to apply several percent controllable strains to monolayer and few-layer Transition Metal Dichalcogenides (TMDs). We use this technique to study the lattice response to strain…

The properties of two-dimensional (2D) materials have been extensively studied and applied in various applications. Our interest is to theoretically investigate the thermal transport and thermoelectric properties of the 2D transition metal…

材料科学 · 物理学 2024-02-16 Radityo Wisesa , Anugrah Azhar , Edi Suprayoga