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相关论文: Kinetic Magnetism at the Interface Between Mott an…

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We analyze the role of spatial electronic correlations and, in particular, of the magnetic fluctuations in Mott insulators. A half-filled Hubbard model is solved at large strength of the repulsion U on a two-dimensional square lattice using…

强关联电子 · 物理学 2024-02-19 Evgeny A. Stepanov , Maria Chatzieleftheriou , Niklas Wagner , Giorgio Sangiovanni

In two-dimensional van der Waals magnetic materials, the interplay between magnetism and electron correlation can give rise to new ground states and lead to novel transport and optical properties. A fundamental question in these materials…

Kagome materials have attracted extensive attention due to their correlated properties. The breathing kagome material system Nb3X8 (X = F, Cl, Br, I) is regarded as a Mott insulator. However, studies on the influence of interlayer coupling…

强关联电子 · 物理学 2025-08-26 Zhongqin Zhang , Jiaqi Dai , Cong Wang , Zhihai Cheng , Wei Ji

We argue that interesting strongly correlated two-dimensional electron systems can be created by modulation doping near a heterojunction between Mott insulators. Because the dopant atoms are remote from the carrier system, the electronic…

强关联电子 · 物理学 2009-11-11 Wei-Cheng Lee , A. H. MacDonald

The interaction-driven insulator-to-metal transition has been reported in the ionic Hubbard model (IHM) for moderate interaction $U$, while its metallic phase only occupies a narrow region in the phase diagram. To explore the enlargement of…

强关联电子 · 物理学 2016-04-13 Mi Jiang , T. C. S. Schulthess

We study the edge magnetization of bilayer graphene ribbons with zigzag edges. The presence of flat edge-state bands at the Fermi energy of undoped bilayer, which gives rise to a strong peak in the density of states, makes bilayer ribbons…

介观与纳米尺度物理 · 物理学 2008-07-22 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos

We investigate proximity effects in a correlated heterostructure of a two-dimensional Mott insulator (MI) and a topological insulator (TI) by employing inhomogeneous dynamical mean-field theory. We show that the edge state of the TI induces…

强关联电子 · 物理学 2015-06-15 Suguru Ueda , Norio Kawakami , Manfred Sigrist

An unexplored physical mechanism which produces a magnetoelectric effect in ferroelectric/ferromagnetic multilayers is studied based on first-principles calculations. Its origin is a change in bonding at the ferroelectric/ferromagnet…

材料科学 · 物理学 2015-06-25 Chun-Gang Duan , Sitaram S. Jaswal , Evgeny Y. Tsymbal

The surface of a 3D topological insulator is conducting and the topologically nontrivial nature of the surface states is observed in experiments. It is the aim of this paper to review and analyze experimental observations with respect to…

介观与纳米尺度物理 · 物理学 2013-03-11 M. Veldhorst , M. Snelder , M. Hoek , C. G. Molenaar , D. P. Leusink , A. A. Golubov , H. Hilgenkamp , A. Brinkman

The possibility of electron beam guiding is theoretically explored on the surface of a topological insulator through the proximity interaction with a magnetic material. The electronic band modification induced by the exchange coupling at…

介观与纳米尺度物理 · 物理学 2015-06-17 Xiaodong Li , Ki Wook Kim

Magnetic exchange driven proximity effect at a magnetic insulator / topological insulator (MI/TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a…

介观与纳米尺度物理 · 物理学 2015-08-19 Mingda Li , Cui-Zu Chang , Brian. J. Kirby , Michelle Jamer , Wenping Cui , Lijun Wu , Yimei Zhu , Don Heiman , Ju Li , Jagadeesh Moodera

We present a theory describing the mechanism for the two-dimensional (2D) metal-insulator transition (MIT) in absence of disorder. A two-band Hubbard model is introduced, describing vacancy-interstitial pair excitations within the Wigner…

强关联电子 · 物理学 2008-02-15 S. Pankov , V. Dobrosavljevic

When a topological insulator (TI) is in contact with a ferromagnet, both time reversal and inversion symmetries are broken at the interface. An energy gap is formed at the TI surface, and its electrons gain a net magnetic moment through…

介观与纳米尺度物理 · 物理学 2016-07-15 Changmin Lee , Ferhat Katmis , Pablo Jarillo-Herrero , Jagadeesh S. Moodera , Nuh Gedik

Using the constrained-path Monte Carlo method, we studied the magnetic properties of the two-dimensional periodic Anderson model for electron fillings between 1/4 and 1/2. We also derived two effective low energy theories to assist in…

强关联电子 · 物理学 2009-10-31 C. D. Batista , J. Bonča , J. E. Gubernatis

The electronic reconstruction at the interface between two insulating oxides can give rise to a highly-conductive interface. In analogy to this remarkable interface-induced conductivity we show how, additionally, magnetism can be induced at…

The antiferromagnetic structure of Sr3Ir2O7, the bilayer analogue of a spin-orbital Mott insulator Sr2IrO4, was revealed by resonant magnetic x-ray diffraction. Contrasting intensities of the magnetic diffraction at the Ir LIII and LII…

强关联电子 · 物理学 2015-06-05 Shigeki Fujiyama , K. Ohashi , H. Ohsumi , K. Sugimoto , T. Takayama , T. Komesu , M. Takata , T. Arima , H. Takagi

We propose to increase the superconducting transition temperature Tc of strongly correlated materials by designing heterostructures which exhibit a high pairing energy as a result of magnetic fluctuations. More precisely, applying an…

超导电性 · 物理学 2015-05-20 Karyn Le Hur , Chung-Hou Chung , I. Paul

We investigate correlation physics in high-density, two-dimensional electron liquids that reside in narrow SrTiO3 quantum wells. The quantum wells are remotely doped via an interfacial polar discontinuity and the three-dimensional (3D)…

强关联电子 · 物理学 2013-11-26 Pouya Moetakef , Clayton A. Jackson , Jinwoo Hwang , Leon Balents , S. James Allen , Susanne Stemmer

To study digital Mott insulator LaTiO3 and band insulator SrTiO3 interfaces, we apply correlated band theory (LDA+U) to (n,m) multilayers, 1<n,m<9. If the on-site repulsion on Ti is large enough to model the magnetic insulating behavior of…

材料科学 · 物理学 2007-05-23 Rossitza Pentcheva , Warren E. Pickett

The Mott insulator provides an excellent foundation for exploring a wide range of strongly correlated physical phenomena, such as high-temperature superconductivity, quantum spin liquid, and colossal magnetoresistance. A Mott insulator with…