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相关论文: Kinetic Magnetism at the Interface Between Mott an…

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Moir\'e materials with flat electronic bands provide a highly controllable quantum system for studies of strong-correlation physics and topology. In particular, angle-aligned heterobilayers of semiconducting transition metal dichalcogenides…

强关联电子 · 物理学 2022-10-05 Yang Xu , Kaifei Kang , Kenji Watanabe , Takashi Taniguchi , Kin Fai Mak , Jie Shan

Numerical studies on Mott transitions caused by the control of the ratio between bandwidth and electron-electron interaction ($U$) are reported. By using the recently proposed path-integral renormalization group(PIRG) algorithm, physical…

强关联电子 · 物理学 2007-05-23 Tsuyoshi Kashima , Masatoshi Imada

We study the effects of an orbital magnetic field on the Mott metal-insulator transition in the Hubbard-Hofstadter model. We demonstrate that sufficiently large magnetic fields induce a Mott insulator-to-metal phase transition supporting…

强关联电子 · 物理学 2025-10-28 Georg Rohringer , Anton A. Markov

We report a detailed study of a model Hamiltonian which exhibits a rich interplay of geometrical spin frustration, strong electronic correlations, and charge ordering. The character of the insulating phase depends on the magnitude of…

强关联电子 · 物理学 2013-05-29 J. Merino , R. H. McKenzie , B. J. Powell

We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO$_3$ on a SrTiO$_3$ substrate are insulating: the thin film geometry lifts the orbital degeneracy which in turn…

Mott insulating behavior is induced by strong electron correlation and can lead to exotic states of matter such as unconventional superconductivity and quantum spin liquids. Recent advances in van der Waals material synthesis enable the…

Sr2IrO4 has been suggested as a Mott insulator from a single J_eff=1/2 band, similar to the cuprates. However this picture is complicated by the measured large magnetic anisotropy and ferromagnetism. Based on a careful mapping to the…

强关联电子 · 物理学 2011-03-31 Fa Wang , T. Senthil

We theoretically study the magnetic proximity effect in the three dimensional (3D) topological insulator/ferromagnetic insulator (TI/FMI) structures in the context of possibility to manage the Dirac helical state in TI. Within continual…

材料科学 · 物理学 2014-06-30 V. N. Men'shov , V. V. Tugushev , S. V. Eremeev , P. M. Echenique , E. V. Chulkov

Ferromagnetism and superconductivity are in most cases adverse. However, recent experiments reveal that they coexist at interfaces of LaAlO3 and SrTiO3. We analyze the magnetic state within density functional theory and provide evidence…

强关联电子 · 物理学 2012-01-20 N. Pavlenko , T. Kopp , E. Y. Tsymbal , G. A. Sawatzky , J. Mannhart

Motivated by twisted transition metal dichalcogenides (TMDs), we study an extended Hubbard model with both on-site and off-site repulsive interactions, in which Mott insulating states with concomitant charge order occur at fractional…

强关联电子 · 物理学 2025-07-10 Zhenhao Song , Urban F. P. Seifert , Leon Balents , Hong-Chen Jiang

We study the effect of a magnetic field on the low energy description of Mott insulators with strong spin-orbit (SO) coupling. In contrast to the standard case of the Hubbard model without SO coupling, we show that Peierls phases can…

强关联电子 · 物理学 2019-10-04 Willian M. H. Natori , Roderich Moessner , Johannes Knolle

We report an experimental study of electron transport properties of MnSe/(Bi,Sb)2Te3 heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)2Te3 is a three-dimensional topological insulator (TI). Strong magnetic…

介观与纳米尺度物理 · 物理学 2021-04-29 Yuxin Liu , Xuefan Niu , Rencong Zhang , Qinghua Zhang , Jing Teng , Yongqing Li

Motivated by experiments on atomically smooth layers of LaTiO$_3$, a Mott insulator, sandwiched between layers of SrTiO$_3$, a band insulator, a simple model for such heterostructures is studied using quasi one-dimensional lattices and the…

强关联电子 · 物理学 2009-11-11 S. S. Kancharla , E. Dagotto

Magnetic proximity effect between topological insulator (TI) and ferromagnetic insulator (FMI) is considered to have great potential in spintronics. However, a complete determination of interfacial magnetic structure has been highly…

介观与纳米尺度物理 · 物理学 2015-04-13 Mingda Li , Wenping Cui , Jin Yu , Zuyang Dai , Zhe Wang , Ferhat Katmis , Wanlin Guo , Jagadeesh Moodera

Reports of emergent conductivity, superconductivity, and magnetism at oxide interfaces have helped to fuel intense interest in their rich physics and technological potential. Here we employ magnetic force microscopy to search for…

介观与纳米尺度物理 · 物理学 2015-06-16 Feng Bi , Mengchen Huang , Chung-Wung Bark , Sangwoo Ryu , Chang-Beom Eom , Patrick Irvin , Jeremy Levy

Twisting is a novel technique for creating strongly correlated effects in two-dimensional bilayered materials, and can tunably generate nontrivial topological properties, magnetism, and superconductivity. Magnetism is particularly…

强关联电子 · 物理学 2023-07-20 Zhigang Song , Jingshan Qi , Olivia Liebman , Prineha Narang

In quantum magnetism spin dimers are typically associated with spin-singlet states. To date, $triplet$ $dimerization$ has not been observed in any 3D or quasi-2D material. With this in mind we here discuss the electronic structure of the…

Materials manifesting the Kitaev model, characterized by bond-dependent interactions on a honeycomb lattice, can host exotic phenomena like quantum spin liquid states and topological magnetic excitations. However, finding such materials…

强关联电子 · 物理学 2024-12-31 Yiqing Gu , Yimeng Gu , Feiyang Liu , Seiko Ohira-Kawamura , Naoki Murai , Jun Zhao

Proximity effects allow for the adjustment of magnetic properties in a physically elegant way. If two thin ferromagnetic (FM) films are brought into contact, electronic coupling alters their magnetic exchange interaction at their interface.…

We study a two-band Hubbard model using the dynamical mean-field theory combined with the exact diagonalization method. At the electron density $n=2$, a transition from a band-insulator to a correlated semimetal occurs when the on-site…

强关联电子 · 物理学 2007-05-23 Y. Ono , K. Sano