相关论文: Modeling of strain-induced Pockels effect in Silic…
We develop a theoretical model, relying on the well established sp3 bond-orbital theory, to describe the strain-induced $\chi^{(2)}$ in tetrahedrally coordinated centrosymmetric covalent crystals, like silicon. With this approach we are…
The development of efficient low-loss electro-optic and nonlinear components based on silicon or its related compounds, such as nitrides and oxides, is expected to dramatically enhance silicon photonics by eliminating the need for…
Recent experiments have found that a mechanically distorted blue phase can exhibit a primary linear electro-optic (Pockels) effect [F. Castles \textit{et al}. Nature Mater. \textbf{13}, 817 (2014)]. Here it is shown that flexoelectricity…
Silicon carbide (SiC) recently emerged as a promising photonic and quantum material owing to its unique material properties. Here, we carry out an exploratory investigation of the electro-optic effect in high-quality-factor 4H-SiC…
A theory for the relation between the spin polarization and luminescence in silicon is presented. The theory provides intuitive relations for phonon-assisted optical transitions between the conduction and valence band edges. It is shown…
The effect of a uniaxial strain on the optical spin orientation of a cubic semiconductor is investigated by calculating the valence wavefunctions, the optical oscillator strengths and the initial electron spin polarization for near resonant…
We demonstrated a large enhancement of Kerr electro-optic nonlinearity through cascaded Pockels effects in a domain inversion ferroelectric crystal. We designed a structure that can implement the cascaded Pockels effects and second-harmonic…
We present a comprehensive theory of the circularly polarized luminescence and its dependence on strain in spin-polarized Si and Ge. Symmetries of wavefunctions and interactions are used to derive concise ratios between intensities of the…
Electro-optic silicon-based modulators contribute to ease the integration of high-speed and low-power consumption circuits for classical optical communications or quantum computers. However, the inversion symmetry in the silicon crystal…
The possibility of controlling the optical transition probability between neighbouring silicon nanoclusters (Si-NCs) constitutes nowadays an attractive prospect in nanophotonics and photovoltaics. In this work, by means of theoretical…
Strain engineering has emerged as a powerful tool to modify the optical and electronic properties of two-dimensional crystals. Here we perform a systematic study of strained semiconducting transition metal dichalcogenides. The effect of…
We report a detailed experimental and theoretical investigation of the effect of residual strain, and strain relaxation, which manifests itself at the Si/SiO$_{2}$ interfaces in commercial silicon-on-insulator (SOI) wafers. SOI material is…
The observation of the electro-optic effect in strained silicon waveguides has been considered as a direct manifestation of an induced $\chi^{(2)}$ non-linearity in the material. In this work, we perform high frequency measurements on…
The sensitive correlation between optical parameters and strain in Mo$S_2$ results in a totally different approach to tune the optical properties. Usually, an external source of strain is employed to monitor the optical and vibrational…
Two new types of electro-optic effect that are linear in the applied electric field strength are theoretically predicted to exist in transparent dielectric crystals due to high order spatial dispersion. The first effect, which is quadratic…
We present a model for the effect of stress on thin amorphous films that develop atop ion-irradiated silicon, based on the mechanism of ion-induced anisotropic plastic flow. Using only parameters directly measured or known to high accuracy,…
Monolayer transition metal dichalcogenides (TMDs) are known to be highly sensitive to externally applied tensile or compressive strain. In particular, strain can be exploited as a tool to control the optical response of TMDs. However, the…
Simulations are used to examine the microscopic origins of strain hardening in polymer glasses. While traditional entropic network models can be fit to the total stress, their underlying assumptions are inconsistent with simulation results.…
This review presents the state of the art in strain and ripple-induced effects on the electronic and optical properties of graphene. It starts by providing the crystallographic description of mechanical deformations, as well as the…
Light-emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its…