相关论文: Numerical and experimental studies of the carbon e…

The new generation of lithography tools use high energy EUV radiation which ionizes the present background gas due to photoionization. To predict and understand the long term impact on the highly delicate mirrors It is essential to…

The highly advanced treatment of surfaces as etching and deposition is mainly enabled by the extraordinary properties of technological plasmas. The primary factors that influence these processes are the flux and the energy of various…

We measured for the first time the electron density in an Extreme Ultra-Violet induced plasma. This is achieved in a low-pressure argon plasma by using a method called microwave cavity resonance spectroscopy. The measured electron density…

An experimental setup that directly reproduces Extreme UV-lithography relevant conditions for detailed component exposure tests is described. The EUV setup includes a pulsed plasma radiation source, operating at 13.5 nm; a debris mitigation…

Extreme ultraviolet (EUV) induced pulsed plasma is unique due to its transient characteristics: the plasma switches between non-thermal state (when EUV power is ON at the beginning of the pulse) and thermal state (end of the pulse at ~ 20…

We used numerical modeling to study the evolution of EUV-induced plasmas in argon and hydrogen. The results of simulations were compared to the electron densities measured by microwave cavity resonance spectroscopy. It was found that the…

Precise control of ion energy distribution functions (IEDF) is crucial for selectivity as well as control over sputter rate and substrate damage in nanoscale plasma processes. In this work, a low frequency (100 kHz) tailored…

Cleaning of contamination of optical surfaces by amorphous carbon (a-C) is highly relevant for extreme ultraviolet (EUV) lithography. We have studied the mechanisms for a-C removal from a Si surface. By comparing a-C removal in a surface…

In the past years, EUV lithography scanner systems have entered High-Volume Manufacturing for state-of-the-art Integrated Circuits (IC), with critical dimensions down to 10 nm. This technology uses 13.5 nm EUV radiation, which is…

The electron residual energy originated from the stochastic heating in under-dense field-ionized plasma is here investigated. The optical response of plasma is initially modeled by using the concept of two counter-propagating…

A new approach for an in-line beam monitor for ionizing radiation was introduced in a recent publication (Beckers, J., et al. "Mapping electron dynamics in highly transient EUV photon-induced plasmas: a novel diagnostic approach using…

Controlling fluxes of vacuum ultraviolet (VUV) radiation is important in a number of industrial and biomedical applications of low pressure plasma sources because, depending on the process, VUV radiation may be desired, required to a…

EUV (Extreme-Ultraviolet) waves are globally propagating disturbances that have been observed since the era of the SoHO/EIT instrument. Although the kinematics of the wave front and secondary wave components have been widely studied, there…

Extreme ultraviolet (EUV) solar flare emissions evolve in time as the emitting plasma heats and then cools. Although accurately modeling this evolution has been historically difficult, especially for empirical relationships, it is important…

Near-surface nitrogen-vacancy ({NV}) centers in diamond have been successfully employed as atomic-sized magnetic field sensors for external spins over the last years. A key challenge is still to develop a method to bring NV centers at…

A model of an electron-beam-plasma system is introduced to model the electrical breakdown physics of low-pressure nitrogen irradiated by an intense pulsed electron beam. The rapidly rising beam current induces an electric field which drives…

The ionization dynamic of argon plasma irradiated by an intense laser is investigated to understand transient physics in dynamic systems. This study demonstrates that significant delayed ionization responses and stepwise ionization…

We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e. relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a…

Multi-dimensional particle-in-cell simulations are used to study the generation of electrostatic shocks in plasma and the reflection of background ions to produce high-quality and high-energy ion beams. Electrostatic shocks are driven by…

The dynamics of electric field generation and radial acceleration of ions by a laser pulse of relativistic intensity propagating in an underdense plasma has been investigated using an one-dimensional electrostatic, ponderomotive model…