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Coulomb interactions among electrons and holes in two-dimensional (2D) semimetals with overlapping valence and conduction bands can give rise to a correlated insulating ground state via exciton formation and condensation. One candidate…

Topological insulators (TIs) are characterized by an insulating bulk and symmetry protected bound state on their boundaries. A "strong" topological insulator is characterized by robust conducting states on \emph{all} boundaries protected by…

介观与纳米尺度物理 · 物理学 2020-12-16 Inbar Hotzen Grinberg , Mao Lin , Wladimir A. Benalcazar , Taylor L. Hughes , Gaurav Bahl

Topological insulators are new class of materials which are characterized by a bulk band gap like ordinary band insulator but have protected conducting states on their edge or surface. These states emerge out due to the combination of…

介观与纳米尺度物理 · 物理学 2017-08-18 Arijit Saha , Arun M. Jayannavar

Although many possible two-dimensional (2D) topological insulators (TIs) have been predicted in recent years, there is still lack of experimentally realizable 2D TI. Through first-principles and tight-binding simulations, we found an…

材料科学 · 物理学 2018-07-31 Can Qi , Liying Ouyang , Jun Hu

Two-dimensional topological insulators (2D TIs) are a highly desired quantum phase but few materials have demonstrated clear signatures of a 2D TI state. It has been predicted that 2D TIs can be created from thin films of three-dimensional…

介观与纳米尺度物理 · 物理学 2023-02-17 Alexander C. Lygo , Binghao Guo , Arman Rashidi , Victor Huang , Pablo Cuadros-Romero , Susanne Stemmer

Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator, but have protected conducting states on their edge or surface. The 2D topological insulator is a quantum spin Hall insulator, which is a…

介观与纳米尺度物理 · 物理学 2015-03-13 M. Z. Hasan , C. L. Kane

The layered semimetal WTe_2 has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We report here that intrinsic superconductivity can be…

The two-dimensional (2D) surface state of the three-dimensional strong topological insulator (STI) is fundamentally distinct from other 2D electron systems in that the Fermi arc encircles an odd number of Dirac points. The TI surface is in…

介观与纳米尺度物理 · 物理学 2013-06-28 Dohun Kim , Paul Syers , Nicholas P. Butch , Johnpierre Paglione , Michael S. Fuhrer

By using angle-resolved photoemission spectroscopy combined with first-principles calculations, we reveal that the topmost unit cell of ZrSnTe crystal hosts two-dimensional (2D) electronic bands of topological insulator (TI) state, though…

A two-dimensional topological insulator (2DTI) is guaranteed to have a helical 1D edge mode in which spin is locked to momentum, producing the quantum spin Hall effect and prohibiting elastic backscattering at zero magnetic field. No…

介观与纳米尺度物理 · 物理学 2017-08-02 Zaiyao Fei , Tauno Palomaki , Sanfeng Wu , Wenjin Zhao , Xinghan Cai , Bosong Sun , Paul Nguyen , Joseph Finney , Xiaodong Xu , David H. Cobden

The topology of WTe2, a transition metal dichalcogenide with large spin-orbit interactions, is thought to combine type II Weyl semimetal and second-order topological insulator (SOTI) character. The SOTI character should endow WTe2…

介观与纳米尺度物理 · 物理学 2026-05-08 X. Ballu , Z. Dou , L. Bugaud , R. Delagrange , A. Bernard , Ratnadwip Singha , L. M. Schoop , R. J. Cava , R. Deblock , Sophie Gueron , H. Bouchiat , M. Ferrier

A quantum spin Hall insulator hosts topological states at the one-dimensional edge, along which backscattering by nonmagnetic impurities is strictly prohibited and dissipationless current flows. Its 3D analogue, a weak topological insulator…

Topologically protected gapless edge/surface states are phases of quantum matter which behave as massless Dirac fermions, immunizing against disorders and continuous perturbations. Recently, a new class of topological insulators (TIs) with…

材料科学 · 物理学 2020-09-30 Baizhan Xia , Shengjie Zheng , Liang Tong , Junrui Jiao , Guiju Duan , Dejie Yu

We grow nearly freestanding single-layer 1T'-WTe2 on graphitized 6H-SiC(0001) by using molecular beam epitaxy (MBE), and characterize its electronic structure with scanning tunneling microscopy / spectroscopy (STM/STS). We demonstrate the…

The family of two-dimensional transition metal carbides, so called MXenes, has recently found new members with ordered double transition metals M$'_2$M$"$C$_2$, where M$'$ and M$"$ stand for transition metals. Here, using a set of…

材料科学 · 物理学 2016-10-04 Mohammad Khazaei , Ahmad Ranjbar , Masao Arai , Seiji Yunoki

The paradigm of classifying three-dimensional (3D) topological insulators into strong and weak ones (STI and WTI) opens the door for the discovery of various topological phases of matter protected by different symmetries and defined in…

Research on two-dimensional (2D) topological insulators (TIs) is obstructed due to the lack of feasible approaches to growing 2D TIs in experiments. Through systematic first-principles calculations and tight-binding simulations, we propose…

材料科学 · 物理学 2019-03-26 Liying Ouyang , Ge Hu , Can Qi , Jun Hu

High-order topological insulators (TIs) are a family of recently-predicted topological phases of matter obeying an extended topological bulk-boundary correspondence principle. For example, a two-dimensional (2D) second-order TI does not…

介观与纳米尺度物理 · 物理学 2020-06-17 Haoran Xue , Yahui Yang , Fei Gao , Yidong Chong , Baile Zhang

The 2007 discovery of quantized conductance in HgTe quantum wells delivered the field of topological insulators (TIs) its first experimental confirmation. While many three-dimensional TIs have since been identified, HgTe remains the only…

介观与纳米尺度物理 · 物理学 2015-03-19 Conan Weeks , Jun Hu , Jason Alicea , Marcel Franz , Ruqian Wu

A second-order topological insulator (SOTI) in $d$ spatial dimensions features topologically protected gapless states at its $(d-2)$-dimensional boundary at the intersection of two crystal faces, but is gapped otherwise. As a novel…

介观与纳米尺度物理 · 物理学 2020-01-06 Xian-Lei Sheng , Cong Chen , Huiying Liu , Ziyu Chen , Zhi-Ming Yu , Y. X. Zhao , Shengyuan A. Yang