相关论文: In-Situ Low-Angle Cross Sectioning: Bevel Slope Fl…
Auger analysis of high-aspect ratio contact holes of integrated microelectronic devices is a challenging analytical task. Due to geometrical shadowing the primary electron beam and the energy analyser have not the required direct line of…
A none conventional approach for depth profiling of thin film systems with enhanced depth resolution has been developed using standard Auger microprobe instruments. For the preparation of an in situ low angle cross-section, the sample is…
A new experimental equipment allowing to study the sputtering induced by ion beam irradiation is presented. The sputtered particles are collected on a catcher which is analyzed in situ by Auger electron spectroscopy without breaking the…
We describe a self calibrating optical technique that allows to perform absolute measurements of scattering cross sections for the light scattered at extremely small angles. Very good performances are obtained by using a very simple optical…
Several, recently proposed methods of surface manufacturing based on ion beam sputtering, which involve dual beam setups, sequential application of ion beams from different directions, or sample rotation, are studied with the method of…
Inverse Compton Scattering at shallow angles can be used to tune the spectrum and increase the brightness of the emitted radiation. Here, we report on the demonstration of emission of visible light by a 4.7 MeV $e$-beam crossing a 780 nm…
Ion sputtering from loose powders remains poorly understood despite its relevance to planetary science and industry. We developed a multiscale Monte Carlo model to simulate sputtering from powders, using a higher-fidelity approach for the…
In this paper evolution of silicon surface topography, under low energy ion bombardment, is investigated at higher oblique incident angles in the range of 63\degree-83\degree. Si(100) substrates were exposed to 500 eV argon ions. Different…
The creep behaviour and microstructural evolution of a Sn-3Ag-0.5Cu wt.% sample with a columnar microstructure have been investigated through in-situ creep testing under constant stress of 30 MPa at 298 K. This is important, as 298 K is…
Depth profiling of thin films by inert gas sputtering is one of the most important applications of Auger electron spectroscopy and X-ray photoelectron spectroscopy. Such an analysis monitors the elemental in-depth composition of the thin…
The production of photons at very small angles with respect to the proton beam direction is studied in deep-inelastic positron-proton scattering at HERA. The data are taken with the H1 detector in the years 2006 and 2007 and correspond to…
Inverse scattering methods capable of compressive imaging are proposed and analyzed. The methods employ randomly and repeatedly (multiple-shot) the single-input-single-output (SISO) measurements in which the probe frequencies, the incident…
Scattering experiments can be leveraged to extract the effective properties of a heterogeneous metamaterial slab based on multi-point measurements in surrounding media. In this technique, two measurements are made in the ambient media on…
Impact collision ion scattering spectroscopy (ICISS), which is a variation of low energy ion scattering (LEIS) that employs large scattering angles, is performed on Bi2Se3 surfaces prepared by ion bombardment and annealing (IBA). ICISS…
Micropatterned surfaces composed of concentric circular defects having a smooth trench-like profile are formed using a photoresist (SU-8). When an evaporating droplet encounters the micropatterned surface an evaporation phase is observed…
Topography of silicon surfaces irradiated by a 2 MeV Si$^+$ ion beam at normal incidence and ion fluences in the range $10^{15}-10^{16}$ ions/cm$^{2}$ has been investigated using scanning tunneling microscopy. At length scales below…
Workflows have been developed in the past decade to enable atom probe tomography analysis at cryogenic temperatures. The inability to control the local deposition of the metallic precursor from the gas-injection system (GIS) at cryogenic…
We report formation of self organized InP nano dots using 3 keV Ar+ ion sputtering, at $15^\circ$ incidence from surface normal, on InP(111) surface. Morphology and optical properties of the sputtered surface, as a function of sputtering…
Topography evolution of Si(100) surface due to oblique incidence low energy ion beam sputtering (IBS) is investigated. Experiments were carried out at different elevated temperatures from 20$^{\circ}$C to 450$^{\circ}$C and at each…
Small angle X-ray scattering (SAXS) was used to quantitatively study the morphology of aligned, mono-disperse conical etched ion tracks in thin films of amorphous silicon dioxide with aspect ratios of around 6:1, and in polycarbonate foils…