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相关论文: Mn$_3$O$_4$(001) film growth on Ag(001) - a system…

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We have used complementary neutron and x-ray reflectivity techniques to examine the depth profiles of a series of as-grown and annealed Ga[1-x]Mn[x]As thin films. A magnetization gradient is observed for two as-grown films and originates…

The use of oxide materials in oxide electronics requires their controlled epitaxial growth. Recently, it was shown that Reflection High Energy Electron Diffraction (RHEED) allows to monitor the growth of oxide thin films even at high oxygen…

材料科学 · 物理学 2009-11-07 D. Reisinger , B. Blass , J. Klein , J. B. Philipp , M. Schonecke , A. Erb , L. Alff , R. Gross

We report a theoretical study on resonant x-ray emission spectra (RXES) in the whole energy region of the Mn $L_{2,3}$ white lines for three prototypical Mn/Ag(001) systems: (i) a Mn impurity in Ag, (ii) an adsorbed Mn monolayer on Ag, and…

强关联电子 · 物理学 2016-08-31 M. Taguchi , P. Kruger , J. C. Parlebas , A. Kotani

A systematic investigation has been performed to optimize the microstructure of $\mathrm{L1_0-FePt-SiO_x}$ granular thin film as recording media for heat-assisted magnetic recording. The FePt-BN nucleation layer, which is stable even at…

A systematic experimental and theoretical study about substrate induced molecular conformation in rubrene thin films by varying film thickness from sub-monolayer to multilayer, which currently attracts substantial attention with regard to…

介观与纳米尺度物理 · 物理学 2016-11-28 Sumona Sinha , Chia-Hsin Wang , Manbendra Mukherjee , Tapas Mukherjee

Manganite thin films are promising candidates for studying the strongly correlated electron systems. Understanding the growth-and morphology-driven changes in the physical properties of manganite thin films is vital for their applications…

The interface and electronic structure of thin (~20-74 nm) Co3O4(110) epitaxial films grown by oxygen-assisted molecular beam epitaxy on MgAl2O4(110) single crystal substrates have been investigated by means of real and reciprocal space…

We report on growth-mode transitions in the growth of SrRuO3 thin films on atomically flat Ti4+ single-terminated SrTiO3 (111) substrates, investigated by reflection high-energy electron diffraction and atomic force microscopy. Over the…

材料科学 · 物理学 2010-02-03 Jaewan Chang , Yoon-Seok Park , Jong-Woo Lee , Sang-Koog Kim

MnGe has been grown as a thin film on Si(111) substrates by molecular beam epitaxy. A 10 \AA\ layer of MnSi was used as seedlayer in order to establish the B20 crystal structure. Films of a thickness between 45 and 135 \AA\ have been…

材料科学 · 物理学 2015-06-16 Josefin Engelke , Dirk Menzel , Vadim Dyadkin

Fe3Si/Al/Fe3Si/GaAs(001) structures were deposited by molecular-beam epitaxy and characterized by transmission and scanning electron microscopy, and x-ray diffraction. The first Fe3Si film on GaAs(001) is growing epitaxially as (001)…

材料科学 · 物理学 2015-12-10 Bernd Jenichen , Uwe Jahn , Andrei Nikulin , Jens Herfort , Holm Kirmse

This paper reports the nanoscale texture and microstructure of a high-performance NdFeAs(O,F) superconducting thin film grown by molecular beam epitaxy on a textured MgO/Y$_2$O$_3$/Hastelloy substrate. The NdFeAs(O,F) film forms a highly…

The results of RHEED, FTIR and Raman spectroscopy study of silicon and germanium films with the thickness up to 200 nm grown from molecular beams on dielectric Si$_3$N$_4$/SiO$_2$/Si(001) substrates are presented. Noticeable changes of the…

The structure, morphology, and electrical properties of epitaxial a-axis oriented thin films of Nd(0.2)Sr(0.8)MnO(3) are reported for thicknesses 10 nm <= t <= 150 nm. Films were grown with both tensile and compressive strain on various…

强关联电子 · 物理学 2015-05-14 K. P. Neupane , J. J. Neumeier , J. L. Cohn

We investigated the initial growth of TiTe$_2$ on Au(111) from sub-monolayer to multi-layer coverage by scanning tunneling microscopy (STM), low-energy electron diffraction intensity analysis (LEED-IV), and density functional theory (DFT).…

Ultrathin (111)-oriented polar iron oxide films were grown on a Pt(111) single crystal either by the reactive deposition of iron or oxidation of metallic iron monolayers. These films were characterized using low energy electron diffraction,…

Thin InN and GaN/InN films were grown on oxygen-polar (O) (000-1) and zinc-polar (Zn) (0001) zinc oxide (ZnO) by plasma-assisted molecular beam epitaxy (PAMBE). The influence of the growth rate (GR) and the substrate polarity on the growth…

材料科学 · 物理学 2018-10-17 Torsten Ernst , Caroline Chèze , Raffaella Calarco

Atomically flat, epitaxial, and stoichiometric thin films of the electronically phase separated compound (La$_{0.5}$Pr$_{0.5}$)$_{0.67}$Ca$_{0.33}$MnO$_{3}$ were grown on as-received and treated NdGaO$_{3}$ substrates by fine tuning of…

材料科学 · 物理学 2011-09-16 Hyoungjeen Jeen , Rafiya Javed , Amlan Biswas

The use of highly efficient and solarblind GaN photocathodes as part of multichannel plate UV detectors for applications in astronomy would strongly benefit from the direct growth of GaN on typical window materials with high transmission…

Mn doped GaAs thin films were grown using molecular beam epitaxy at high and low substrate temperatures. The elemental concentration depth profiles in the thin films were determined by using Auger electron spectroscopy combined with ion…

介观与纳米尺度物理 · 物理学 2015-06-24 J. F. Xu , P. M. Thibado , C. Awo-Affouda , R. Moore , V. P. LaBella

For a ultrathin NiO(001) film of 4 monolayers (ML) thickness grown on Ag(001), the vibrational properties have been determined by high-resolution electron energy loss spectroscopy (HREELS). For the well-ordered pseudomorphically grown film,…

材料科学 · 物理学 2016-01-20 K. L. Kostov , S. Polzin , F. O. Schumann , W. Widdra