相关论文: Spin Coherence and Echo Modulation of the Silicon …

Spin impurities in diamond have emerged as a promising building block in a wide range of solid-state-based quantum technologies. The negatively charged silicon-vacancy centre combines the advantages of its high-quality photonic properties…

Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken…

Spin defects in silicon carbide (SiC) have attracted increasing interest due to their excellent optical and spin properties, which are useful in quantum information processing. In this paper, we systematically investigate the temperature…

Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the…

Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and technological maturity. We calculate the multi-particle symmetry adapted wave functions of the negatively…

We demonstrate that silicon carbide (SiC) with natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over unexpectedly long time approaching 0.1 seconds. The spin-locked subspace with drastically reduced…

Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon vacancy related centers in silicon…

We study the silicon vacancy in 3C SiC as a color center of interest in the field of Quantum Technologies, focusing on its magnetic interaction with the SiC nuclear spin bath containing Si29 and C13 nuclei in their natural isotopic…

We report the realization of the optically induced inverse population of the ground-state spin sublevels of the silicon vacancies ($V_{\mathrm{Si}}$) in silicon carbide (SiC) at room temperature. The data show that the probed silicon…

We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which makes them highly promising for quantum technologies. The…

Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numerous open questions about the physics of divacancy point…

Silicon is promising for spin-based quantum computation because nuclear spins, a source of magnetic noise, may be eliminated through isotopic enrichment. Long spin decoherence times, $T_2$, have been measured in isotope-enriched silicon but…

Coupling microwave cavity modes with spin qubit transitions is crucial for enabling efficient qubit readout and control, long-distance qubit coupling, quantum memory implementation, and entanglement generation. We experimentally observe the…

The negatively charged silicon vacancy [V$_\text{Si}(-)$] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V$_\text{Si}(-)$ defect possesses $S = 3/2$ spin with long spin coherence time and can be…

Great efforts have been made to the investigation of defects in silicon carbide for their attractive optical and spin properties. However, most of the researches are implemented at low and room temperature. Little is known about the spin…

We report experimental studies of coherent population trapping and spin relaxation in a temperature range between 4 K and 100 mK in a silicon vacancy (SiV) center subject to a transverse magnetic field. Near and below 1 K, phonon-induced…

Defects in wide-bandgap semiconductors provide a pathway for applications in quantum information and sensing in solid state materials. The silicon vacancy in silicon carbide has recently emerged as a new candidate for optical control of…

We demonstrate direct, acoustically mediated spin control of naturally occurring negatively charged silicon monovacancies (V$_{Si}^-$) in a high quality factor Lateral Overtone Bulk Acoustic Resonator fabricated out of high purity…

The long-lived and optically addressable spin states of silicon vacancies ($\mathrm{V}_\mathrm{Si}$) in 4H-SiC make them promising qubits for quantum communication and sensing. These color centers can be created in both the hexagonal (V1)…

Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of 3x10^17 cm^3 and O to a concentration of 10^20 cm^3, the…