相关论文: Scaling Theory of Electrically Doped 2D Transistor…

We have reexamined data on the possible two dimensional metal-insulator transition at B=0 in Si-MOSFETs using a nonlinear regression method to extract all scaling parameters in a single fit. By keeping track of the magnitude of errors in…

Quantum--Mechanical methods that are both computationally fast and accurate are not yet available for electronic excitations having charge transfer character. In this work, we present a significant step forward towards this goal for those…

Nanofluidic devices prompts unconventional ion transports appealing to energy and information technologies, thanks to the susceptibility of confined electric double layers (EDL) to various external physical fields. Although experimental…

At low temperature T, a significant difference between the behavior of crystals on the one hand and disordered solids on the other is seen: sufficiently strong disorder can give rise to a transition of the transport properties from…

The doped silicon regions (tubs) in PWFDSOI MOSFET cause significant reduction in OFF current by reducing the number of carriers contributing to the OFF current. The emphasis of the simulation and device physics study on PWFDSOI MOSFET…

The search for semiconductors with high thermoelectric figure of merit has been greatly aided by theoretical modeling of electron and phonon transport, both in bulk materials and in nanocomposites. Recent experiments have studied…

There is considerable evidence that the highest $T_c$ obtainable in a copper-oxide plane is limitted by the competition between two effects: On the one hand, as the concentration of doped-holes, $ x$, is increased, the pairing scale, which…

We show that the thermodynamic dislocation theory (TDT) predicts a scaling relation between stresses, strain rates, and temperatures for steady-state deformations of crystalline solids, and that this relation is accurately obeyed by a wide…

Quantization in the inversion layer and phase coherent transport are anticipated to have significant impact on device performance in 'ballistic' nanoscale transistors. While the role of some quantum effects have been analyzed qualitatively…

While 2D materials have enormous potential for future device technologies, many challenges must be overcome before they can be deployed at an industrial scale. One of these challenges is identifying the right semiconductor/insulator…

Scaling theory predicts complete localization in $d=2$ in quantum systems belonging to orthogonal class (i.e. with time-reversal symmetry and spin-rotation symmetry). The conductance $g$ behaves as $g \sim exp(-L/l)$ with system size $L$…

We develop a new theoretical scheme for charge transport and thermoelectric response in two-dimensional disordered systems exhibiting crossover from weak localization (WL) to strong localization (SL). The scheme is based on the scaling…

We compute the Entanglement Entropy (EE) of a bipartition in 2D pure non-abelian $U(N)$ gauge theory. We obtain a general expression for EE on an arbitrary Riemann surface. We find that due to area-preserving diffeomorphism symmetry EE does…

In a recent article, Alldredge et al. reported tunnelling data obtained at T = 4.2 K by STM in Bi-2212 having different doping levels, p, and a new way to fit the measured differential conductances, g(V), which are linearly proportional to…

The U(1) holon-pair boson theory of Lee and Salk(Phys. Rev. B 64, 052501 (2001)) is applied to investigate the quantum scaling behavior of optical conductivity in the two dimensional systems of strongly correlated electrons. We examine the…

In the past two decades another transistor based on conducting polymers, called the organic electrochemical transistor (ECT) was shown and largely studied. The main difference between organic ECTs and FETs is the mode and extent of channel…

Electron tunneling experiments are used to probe Coulomb correlation effects in the single-particle density-of-states (DOS) of boron-doped silicon crystals near the critical density of the metal-insulator transition (MIT). At low energies,…

We investigate the controllability of quantum electrons trapped in a two-dimensional device, typically a MOS field-effect transistor. The problem is modeled by the Schr\"odinger equation in a bounded domain coupled to the Poisson equation…

The intermediate 3D XY scaling theory of superconductivity at zero and nonzero magnetic fields is developed, based only upon the dimensional hypothesis $B\sim (Length)^{-2}$. Universal as well as nonuniversal aspects of the theory are…

Many low-dimensional materials are well described by integrable one-dimensional models such as the Hubbard model of electrons or the Heisenberg model of spins. However, the small perturbations to these models required to describe real…