相关论文: Scaling Theory of Electrically Doped 2D Transistor…

As it has been demonstrated that trapped ion systems have unmatched long-lived quantum-bit (qubit) coherence and can support high-fidelity quantum manipulations, how to scale up the system size becomes an inevitable task for practical…

In order to continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But the further scaling of silicon-based devices and the development of…

We propose a unified scaling theory of entanglement entropy in the confinements of finite bond dimensions, dynamics and system sizes. Within the theory, the finite-entanglement scaling introduced recently is generalized to the dynamics…

We study the electronic transport properties of the Anderson model on a strip, modeling a quasi one-dimensional disordered quantum wire. In the literature, the standard description of such wires is via random matrix theory (RMT). Our…

Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily…

Amorphous metal oxide thin-film transistors (TFT) are fabricated using InOx-based semiconductors doped with TiO2, WO3 or SiO2. Although density of dopant is low in the film, change in the electrical properties showed strong dependence on…

Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-quality, ultrathin high-\k{appa} dielectrics that fully meet…

The scaled particle theory is applied to a description of thermodynamic properties of one-dimensional hard rod fluid in disordered porous media. To this end, we extended the SPT2 approach, which had been developed previously. Analytical…

Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…

Using multiband k*p theory we study the size and geometry dependence on the slow light properties of conical semiconductor quantum dots. We find the V-type scheme for electromagnetically induced transparency (EIT) to be most favorable, and…

High-dimensional limit theorems have been shown useful to derive tuning rules for finding the optimal scaling in random-walk Metropolis algorithms. The assumptions under which weak convergence results are proved are however restrictive: the…

A dome-shaped phase diagram of superconducting critical temperature upon doping is often considered as a hallmark of unconventional superconductors. This behavior, observed in two-dimensional electron gases in $\mathrm{SrTiO}_3$-based…

Recent measurements on extremely-underdoped YBa2Cu3O6+y [Phys. Rev. Lett. 99, 237003 (2007)] have allowed the critical temperature (T_c), superfluid density [rho_0 (T << T_c)] and dc conductivity [sigma_dc (T ~ T_c)] to be determined for a…

In the vicinity of continuous quantum phase transitions (QPTs), quantum systems become scale-invariant and can be grouped into universality classes characterized by sets of critical exponents. We have found that despite scale-invariance and…

Band gap engineering of oxide semiconductors through doping is critical for photocatalysis and optoelectronics, yet the combinatorial space of dopant elements, substitution sites, and co-doping combinations far exceeds typical density…

We propose a simple yet very predictive form, based on a Poisson's equation, for the functional dependence of the cost from the density of points in the Euclidean bipartite matching problem. This leads, for quadratic costs, to the analytic…

Inspired by experimental observations related to electrolyte-gated transistors (EGTs) where non-ideals behaviors are shown and not described by just one theoretical model, we proposed a charge carriers transport model able to describe the…

Accurate determination of carrier transport properties in two-dimensional (2D) materials is critical for designing high-performance nano-electronic devices and quantum information platforms. While first-principles calculations effectively…

Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable…

Density functional theory (DFT) embedding provides a formally exact framework for interfacing correlated wave-function theory (WFT) methods with lower-level descriptions of electronic structure. Here, we report techniques to improve the…