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相关论文: Valley and spin dynamics in monolayer MoS$_{2}$

200 篇论文

Manipulating the valley degree of freedom to encode information for potential valleytronic devices has ignited a new direction in solid-state physics. A significant, fundamental challenge in the field of valleytronics is how to generate and…

介观与纳米尺度物理 · 物理学 2020-07-02 Hui-Ying Mu , Yi-Tong Yao , Jie-Ru Li , Guo-Cai Liu , Chao He , Ying-Jie Sun , Guang Yang , Xing-Tao An , Yong-Zhe Zhang , Jian-Jun Liu

Monolayer transition-metal dichalcogenides (TMDCs) have recently emerged as possible candidates for valleytronic applications, as the spin and valley pseudospin are directly coupled and stabilized by a large spin splitting. In these…

The electron's charge and spin degrees of freedom are at the core of modern electronic devices. With the in-depth investigation of two-dimensional materials, another degree of freedom, valley, has also attracted tremendous research…

材料科学 · 物理学 2023-09-06 Ping Li , Bang Liu , Wei-Xi Zhang , Zhi-Xin Guo

Understanding strongly interacting electrons enables the design of materials, nanostructures and devices. Developing this understanding relies on the ability to tune and control electron-electron interactions by, e.g., confining electrons…

强关联电子 · 物理学 2021-01-04 Ludmila Szulakowska , Moritz Cygorek , Maciej Bieniek , Pawel Hawrylak

Monolayers of transition metal dichalcogenides, namely, molybdenum and tungsten disulfides and diselenides demonstrate unusual optical properties related to the spin-valley locking effect. Particularly, excitation of monolayers by…

介观与纳米尺度物理 · 物理学 2015-11-12 M. M. Glazov , E. L. Ivchenko , G. Wang , T. Amand , X. Marie , B. Urbaszek , B. L. Liu

Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant…

In monolayer Transition Metal Dichalcogenides (TMDs) the valence and conduction bands are spin split because of the strong spin-orbit interaction. In tungsten-based TMDs the spin-ordering of the conduction band is such that the so-called…

Valleytronics is one of the breaking-through to the technology of electronics, which provides a new degree of freedom to manipulate the properties of electrons. Combining DFT calculations, optical absorption analysis and the linear…

材料科学 · 物理学 2017-08-16 Tiantian Zhang , Sijie Zhang , Gang Xu , Nanlin Wang , Zhong Fang

In a number of widely-studied materials, such as Si, AlAs, Bi, graphene, MoS2, and many transition metal dichalcogenide monolayers, electrons acquire an additional, spin-like degree of freedom at the degenerate conduction band minima, also…

介观与纳米尺度物理 · 物理学 2018-08-01 M. A. Mueed , Md. Shafayat Hossain , I. Jo , L. N. Pfeiffer , K. W. West , K. W. Baldwin , M. Shayegan

In monolayer group-VI transition metal dichalcogenides (TMDC), charge carriers have spin and valley degrees of freedom, both associated with magnetic moments. On the other hand, the layer degree of freedom in multilayers is associated with…

介观与纳米尺度物理 · 物理学 2013-07-19 Zhirui Gong , Gui-Bin Liu , Hongyi Yu , Di Xiao , Xiaodong Cui , Xiaodong Xu , Wang Yao

The semiconducting single-layer transition metal dichalcogenides have been identified as ideal materials for accessing and manipulating spin- and valley-quantum numbers due to a set of favorable optical selection rules in these materials.…

A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission being controlled by the relative alignment of magnetic moments of the two ferromagnetic…

材料科学 · 物理学 2024-08-23 Kai Huang , Kartik Samanta , Ding-Fu Shao , Evgeny Y. Tsymbal

Degenerate extrema in the energy dispersion of charge carriers in solids, also referred to as valleys, can be regarded as a binary quantum degree of freedom, which can potentially be used to implement valleytronic concepts in van der Waals…

Manipulation of intrinsic electron degrees of freedom, such as charge and spin, gives rise to electronics and spintronics, respectively. Electrons in monolayer materials with a honeycomb lattice structure, such as the Transition-Metal…

强关联电子 · 物理学 2018-11-27 E. C. Marino , Leandro O. Nascimento , Van Sérgio Alves , N. Menezes , C. Morais Smith

The valley degree of freedom and the possibility of spin-valley coupling of solid materials have attracted growing interest, and the relaxation dynamics of spin- and valley-polarized states has become an important focus of recent studies.…

材料科学 · 物理学 2018-09-24 Dongbin Shin , Hosub Jin , Noejung Park

Electrons in monolayer transition metal dichalcogenides (TMDs) possess both the valley and spin degree of freedom. These internal quantum degrees of freedom have provided an ideal laboratory for exploring both new physical phenomena and…

介观与纳米尺度物理 · 物理学 2017-02-21 Zefang Wang , Jie Shan , kin Fai Mak

Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field…

材料科学 · 物理学 2020-02-13 He Hu , Wen-Yi Tong , Yu-Hao Shen , Xiangang Wan , Chun-Gang Duan

Valleytronics, that uses the valley index or valley pseudospin to encode information, has emerged as an interesting field of research in two-dimensional (2D) systems with promising device applications. Spin-orbit coupling (SOC) and…

材料科学 · 物理学 2023-08-14 Sutapa Chattopadhyay , Anjali Kshirsagar

Manipulating spin polarization of electrons in nonmagnetic semiconductors by means of electric fields or optical fields is an essential theme of the conceptual nonmagnetic semiconductor-based spintronics. Here we experimentally demonstrate…

介观与纳米尺度物理 · 物理学 2016-03-31 Xie Lu , Xiaodong Cui

We study electron transport in monolayer molybdenum disulfide MoS$_2$ subjected to a magnetic barrier. Our analysis employs a full-band continuum model to capture the relevant physical phenomena. We focus on how electron energy, magnetic…

介观与纳米尺度物理 · 物理学 2025-07-16 Ahmed Jellal , Nadia Benlakhouy , Pablo Díaz , David Laroze