相关论文: Magnetooptical Study of Zeeman Effect in Mn modula…
Photoluminescence (PL) and highly circularly-polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum…
Circularly-polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in Faraday geometry. Structures with different thickness of the QW barriers have…
The photoluminescence (PL) spectrum of modulation-doped GaAs/AlGaAs quantum wells (MDQW) and heterojunctions (HJ) is studied under a magnetic field ($B_{\|}$) applied parallel to the two-dimensional electron gas (2DEG) layer. The effect of…
Electron spin polarization up to 100% has been observed in type-II narrow-gap heterostructures with ultrathin InSb insertions in an InAs matrix via investigation of circularly polarized photoluminescence in an external magnetic field…
A new approach to the growth of diluted magnetic semiconductors with two dimensional electron gas in InAs quantum well has been developed. The method is based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te…
In-plane magnetic field photoluminescence spectra from a series of GaAs/AlGaAs coupled double quantum wells show distinctive doublet structures related to the symmetric and antisymmetric states. The magnetic field behavior of the upper…
Photoluminescence (PL) of the 50 nm $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$/ $d$ nm $Zn_{0.943}Be_{0.057}Se$/ 2.5 nm $ZnSe$/ 30 nm $Zn_{0.943}Be_{0.057}Se$ structures is investigated as a function of magnetic field ($B$) and thickness ($d$) of…
The spin-memory effect in the GaAs / InGaAs heterostructures with $\delta$<Mn> layer in GaAs barrier have been investigated. The effect consists in spin polarization of Mn atoms due to interaction with photogenerated spin-polarized holes.…
We report on magnetic field dependence of half-integer quantized conductance plateaus (HQPs) in InAs quantum wires. We observed HQPs at zero applied magnetic field in InAs quantum wires fabricated from a high-quality InAs quantum well. The…
We present a theory that describes the appearance of circular polarization of the photoluminescence (PL) in ferromagnet-semiconductor hybrid heterostructures due to spin-dependent tunneling of photoexcited carriers from a quantum well into…
Investigations of photoluminescence (PL) in the magnetic field of quantum structures based on the ZnSe quantum well with asymmetrical ZnBeMnSe and ZnBeSe barriers reveal that the introduction of Be into semimagnetic ZnMnSe causes a decrease…
The magnetization kinetics in (Zn,Mn)Se/(Zn,Be)Se quantum wells has been studied on a ps-time scale after pulsed laser excitation. The magnetization induced by an external magnetic field is reduced by up to 30% during ~100 ps due to spin…
In this paper, polarized photoluminescence caused by exciton quasi-equilibrium spin orientation on Zeeman sublevels in an ensemble of quantum dots of different sizes is theoretically studied. It is found that: (i) the splitting of the…
We report on the micro-photoluminescence spectroscopy of InAs/GaAs quantum dots (QD) doped by a single Mn atom in a magnetic field either longitudinal or perpendicular to the optical axis. In both cases the spectral features of positive…
We have developed a theory of the longitudinal $g$ factor of light holes in semiconductor quantum wells. It is shown that the absolute value of the light-hole $g$-factor can strongly exceed its value in the bulk and, moreover, the…
A simple model of circular polarization dependence on Mn delta-layer position in LED heterostructures with InGaAs/GaAs quantum well is proposed, being able to explain quite accurately recent fascinating experimental results [S.V. Zaitsev,…
Wide quantum dots were fabricated from multiple quantum well structures based on Zn_{1-x}Mn_xTe/ZnTe (x = 0.076) dilute magnetic semiconductors and were investigated via photoluminescence (PL) in a magnetic field. Calculations taking into…
The photoluminescence polarizations of (In,Ga)As/GaAs quantum dots annealed at different temperatures are studied as a function of external magnetic field (Hanle curves). In these dependencies, remarkable resonant features appear due to…
The method of detection and investigation of the magnetopolaron effect in the semiconductor quantum wells (QW) in a strong magnetic field, based on pulse light irradiation and measuring the reflected and transmitted pulses, has been…
We report on the photoluminescence (PL) properties of MgZnO/ZnO heterojunctions grown by plasma-assisted molecular-beam epitaxy. Influence of the applied magnetic field (B) on the radiative recombination of the two-dimensional electron gas…