相关论文: Simultaneous Localization of Electrons in differen…

The development of electron spin resonance (ESR) combined with scanning tunneling spectroscopy (STM) is undoubtedly one of the main experimental breakthroughs in surface science of the last decade thanks to joining the extraordinarily high…

Spin qubits based on silicon metal-oxide semiconductor (Si-MOS) quantum dots (QDs) are promising platforms for large-scale quantum computers. To control spin qubits in QDs, electric dipole spin resonance (EDSR) has been most commonly used…

We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley…

The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in…

Electronic states localized at domain walls between ferromagnetically ordered phases in two-dimensional electron systems are generated by moderate spin-orbit coupling. The spin carried by these states depends on the slope of the magnetic…

The bandstructure of bulk silicon has a six-fold valley degeneracy. Strain in the Si/SiGe quantum well system partially lifts the valley degeneracy, but the materials factors that set the splitting of the two lowest lying valleys are still…

We develop a theory of effects of electron-electron collisions on the Dyakonov-Perel' spin relaxation in multi-valley quantum wells. It is shown that the electron-electron scattering rate which governs the spin relaxation is different from…

We have recently proposed a quantum control method based on the knowledge of the energy spectrum as a function of an external control parameter [Phys. Rev. Lett. {\bf 99}, 036806 (2007)]. So far, our method has been applied to connect the…

The backscattering process of injected electrons on exchange-splitted levels of quantum well (QW) in ferromagnetic metal / insulator / semiconductor heterostructure is studied. It is found that, if one of the exchange-splitted levels lies…

Exact ground-state properties are presented by combining the diagonalization in the Fock space (and taking all hopping integrals and all two-site interactions) with the ab initio optimization of the Wannier functions. Electrons are…

We have investigated light-matter hybrid excitations in a quantum dot (QD)-terahertz (THz) optical resonator coupled system. We fabricate a gate-defined QD in the vicinity of a THz split-ring resonator (SRR) by using a AlGaAs/GaAs…

We develop an analytical method for the processing of electron spin resonance (ESR) spectra. The goal is to obtain the distributions of trapped carriers over both their degree of localization and their binding energy in semiconductor…

In Si/SiGe heterostructures, the low-lying excited valley state seriously limit operability and scalability of electron spin qubits. For characterizing and understanding the local variations in valley splitting, fast probing methods with…

We report on the experimental study of electron transport in sub-micron-wide ''wires'' fabricated from Si $\delta $-doped GaAs. These quasi-one-dimensional (Q1D) conductors demonstrate the crossover from weak to strong localization with…

We demonstrate the extension of coherence between all four two-electron spin ground states of an InAs quantum dot molecule (QDM) via non-local suppression of nuclear spin fluctuations in both constituent quantum dots (QDs), while optically…

We study the development of electron-electron correlations in circular quantum dots as the density is decreased. We consider a wide range of both electron number, N<=20, and electron gas parameter, r_s<18, using the diffusion quantum Monte…

We have investigated nucleation of merons in double quantum dots when a lateral distortion with a reflection symmetry is present in the confinement potential. We find that merons can nucleate both inside and at the edge of the dots. In…

A system of two quantum wells (QW), one made of HgCdTe and the other of HgCdMnTe, subjected to electric and magnetic fields $F$ and $B$ parallel to the growth direction, is proposed and described theoretically. It is shown that in such a…

Interactions between electrons can strongly affect the shape and functionality of multi-electron quantum dots. The resulting charge distributions can be localized, as in the case of Wigner molecules, with consequences for the energy…

We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are…