Spin qubits based on silicon metal-oxide semiconductor (Si-MOS) quantum dots (QDs) are promising platforms for large-scale quantum computers. To control spin qubits in QDs, electric dipole spin resonance (EDSR) has been most commonly used in recent years. By delocalizing an electron across a double quantum dots charge state, flopping-mode EDSR has been realized in Si/SiGe QDs. Here, we demonstrate a flopping-mode spin qubit in a Si-MOS QD via Elzerman single-shot readout. When changing the detuning with a fixed drive power, we achieve s-shape spin resonance frequencies, an order of magnitude improvement in the spin Rabi frequencies, and virtually constant spin dephasing times. Our results offer a route to large-scale spin qubit systems with higher control fidelity in Si-MOS QDs.
@article{arxiv.2209.14531,
title = {Flopping-mode spin qubit in a Si-MOS quantum dot},
author = {Rui-Zi Hu and Rong-Long Ma and Ming Ni and Yuan Zhou and Ning Chu and Wei-Zhu Liao and Zhen-Zhen Kong and Gang Cao and Gui-Lei Wang and Hai-Ou Li and Guo-Ping Guo},
journal= {arXiv preprint arXiv:2209.14531},
year = {2023}
}