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相关论文: Efficient spin injection into graphene through a t…

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We study the spin injection efficiency into single and bilayer graphene on the ferrimagnetic insulator Yttrium-Iron-Garnet (YIG) through an exfoliated tunnel barrier of bilayer hexagonal boron nitride (hBN). The contacts of two samples…

介观与纳米尺度物理 · 物理学 2018-09-26 J. C. Leutenantsmeyer , T. Liu , M. Gurram , A. A. Kaverzin , B. J. van Wees

Realisation of practical spintronic devices relies on the ability to create and detect pure spin currents. In graphene-based spin valves this is usually achieved by injection of spin-polarized electrons from ferromagnetic contacts via a…

Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room…

介观与纳米尺度物理 · 物理学 2009-11-28 C. Józsa , M. Popinciuc , N. Tombros , H. T. Jonkman , B. J. van Wees

We characterize the spin injection into bilayer graphene fully encapsulated in hBN using trilayer (3L) hexagonal boron nitride (hBN) tunnel barriers. As a function of the DC bias, the differential spin injection polarization is found to…

介观与纳米尺度物理 · 物理学 2018-12-05 Johannes Christian Leutenantsmeyer , Josep Ingla-Aynés , Mallikajurna Gurram , Bart J. van Wees

The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic…

介观与纳米尺度物理 · 物理学 2014-06-24 M. Venkata Kamalakar , André Dankert , Johan Bergsten , Tommy Ive , Saroj P. Dash

Deposition of graphene on top of hexagonal boron nitride (h-BN) was very recently demonstrated while graphene is now routinely grown on Ni. Because the in-plane lattice constants of graphite, h-BN, graphite-like BC2N and of the close-packed…

We report a first principles study of spin-transport under finite bias through a graphene-ferromagnet (FM) interface, where FM=Co(111), Ni(111). The use of Co and Ni electrodes achieves spin efficiencies reaching 80% and 60%, respectively.…

介观与纳米尺度物理 · 物理学 2014-08-08 Jesse Maassen , Wei Ji , Hong Guo

We report the first measurements of spin injection in to graphene through a 20 nm thick tungsten disulphide (WS$_2$) layer, along with a modified spin relaxation time ({\tau}s) in graphene in the WS$_2$ environment, via spin-valve and Hanle…

介观与纳米尺度物理 · 物理学 2017-02-15 Siddhartha Omar , Bart J. van Wees

The current research in graphene spintronics strives for achieving a long spin lifetime, and efficient spin injection and detection in graphene. In this article, we review how hexagonal boron nitride (hBN) has evolved as a crucial…

介观与纳米尺度物理 · 物理学 2018-06-26 Mallikarjuna Gurram , Siddhartha Omar , Bart J. van Wees

We present an experimental study of spin transport in single layer graphene using atomic sheets of hexagonal boron nitride (h-BN) as a tunnel barrier for spin injection. While h-BN is expected to be favorable for spin injection, previous…

介观与纳米尺度物理 · 物理学 2017-03-31 Simranjeet Singh , Jyoti Katoch , Jinsong Xu , Cheng Tan , Tiancong Zhu , Walid Amamou , James Hone , Roland Kawakami

We study fully hexagonal boron nitride (hBN)-encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes; thick-hBN flake as a bottom gate…

介观与纳米尺度物理 · 物理学 2016-04-01 M. Gurram , S. Omar , S. Zihlmann , P. Makk , C. Schönenberger , B. J. van Wees

The bias dependence of spin injection in graphene lateral spin valves is systematically studied to determine the factors affecting the tunneling spin injection efficiency. Three types of junctions are investigated, including MgO and…

介观与纳米尺度物理 · 物理学 2018-08-22 Tiancong Zhu , Simranjeet Singh , Jyoti Katoch , Hua Wen , Kirill Belashchenko , Igor Žutić , Roland K. Kawakami

Heterostructures combining graphene with 3d transition metal ferromagnets (FMs) enable various spin-based phenomena at ultrafast timescales. However, challenges such as the interfacial impedance mismatch, FM deposition-induced defect…

We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by…

介观与纳米尺度物理 · 物理学 2015-06-22 Wangyang Fu , Péter Makk , Romain Maurand , Matthias Bräuninger , Christian Schönenberger

We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene…

介观与纳米尺度物理 · 物理学 2011-11-17 Takehiro Yamaguchi , Satoru Masubuchi , Kazuyuki Iguchi , Rai Moriya , Tomoki Machida

We theoretically investigate the spin injection in different FM/I/n-Si tunnel contacts by using the lattice NEGF method. We find that the tunnel contacts with low barrier materials such as TiO$_2$ and Ta$_{2}$O$_{5}$, have much lower…

介观与纳米尺度物理 · 物理学 2017-05-24 Yang Yang , Zhenhua Wu , Wen Yang , Jun Li , Songyan Chen , Cheng Li

We study room temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapour deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick…

In this work we report efficient out-of-plane spin injection and detection in an all-van der Waals based heterostructure using only exfoliated 2D materials. We demonstrate spin injection by measuring spin-valve and Hanle signals in…

We demonstrate electrical spin injection from a ferromagnet to a bilayer graphene (BLG) through a monolayer (ML) of single-crystal hexagonal boron nitride (h-BN). A Ni81Fe19/ML h-BN/BLG/h-BN structure is fabricated using a micromechanical…

The in-plane lattice constants of close-packed planes of fcc and hcp Ni and Co match that of graphite almost perfectly so that they share a common two dimensional reciprocal space. Their electronic structures are such that they overlap in…

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