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In this work, a compact transport model has been developed for monolayer transition metal dichalcogenide (TMDC) channel MOSFET. The analytical model solves the Poisson's equation for the inversion charge density to get the electrostatic…

介观与纳米尺度物理 · 物理学 2018-04-30 Ehsanur Rahman , Abir Shadman , Imtiaz Ahmed , Saeed Uz Zaman Khan , Quazi D. M. Khosru

Molybdenum disulfide (MoS$_2$) is a promising material for making two-dimensional crystals and flexible electronic and optoelectronic devices at the nanoscale. MoS$_2$ flakes can show high mobilities and have even been integrated in…

材料科学 · 物理学 2015-06-15 Mohamed Boukhicha , Matteo Calandra , Marie-Aude Measson , Ophelie Lancry , Abhay Shukla

Monolayer transition metal dichalcogenides (e.g., MoS2) exhibit exceptionally large optical nonlinearities for high-order nonlinear light generation (NLG), yet their inherent atomic thickness fundamentally limits light-matter interactions…

When complex mechanisms are involved, pinpointing high-performance materials within large databases is a major challenge in materials discovery. We focus here on phonon-limited conductivities, and study 2D semiconductors doped by field…

材料科学 · 物理学 2020-12-16 Thibault Sohier , Marco Gibertini , Nicola Marzari

Monolayers (ML) of Group-6 transition-metal dichalcogenides (TMDs) are semiconducting two-dimensional materials with direct bandgap, showing promising applications in various fields of science and technology, such as nanoelectronics and…

The ability to perform efficient electrical spin injection from ferromagnetic metals into two-dimensional semiconductor crystals based on transition metal dichalcogenide monolayers is a prerequisite for spintronic and valleytronic devices…

材料科学 · 物理学 2018-03-29 Thomas Garandel , Rémi Arras , Xavier Marie , Pierre Renucci , Lionel Calmels

Molybdenum disulfide (MoS$_2$) is a high-potential material for nanoelectronic applications, especially when thinned to a few layers. Liquid phase exfoliation enables large-scale fabrication of thin films comprising single- and few-layer…

材料科学 · 物理学 2024-11-19 Alireza Ghasemifard , Agnieszka Kuc , Thomas Heine

The hexagonal boron nitride (hBN) encapsulation has been widely used in the electronics applications of 2D materials to improve device performance by protecting 2D materials against contamination and degradation. It is often assumed that…

材料科学 · 物理学 2019-06-18 Xu Han , Jiangxiazi Lin , Junwei Liu , Ning Wang , Ding Pan

A new two-dimensional (2D) layered material, namely, titanium trisulfide (TiS$_3$) monolayer sheet, is predicted to possess desired electronic properties for nanoelectronic applications. On basis of the first-principles calculations within…

介观与纳米尺度物理 · 物理学 2015-05-14 Jun Dai , Xiao Cheng Zeng

The coexistence of semiconducting (2H) and metallic (1T) phases of MoS$_{2}$ monolayers have further pushed their strong potential for applications in the next generation of electronic devices based on the two-dimensional lateral…

计算物理 · 物理学 2021-12-01 Mohammad Bahmani , Mahdi Ghorbani-Asl , Thomas Frauenheim

Organohalide perovskite with a variety of surface structures and morphologies have shown promising potential owing to the choice of the type of heterostructure dependent stability. We systematically investigate and discuss the impact of…

应用物理 · 物理学 2022-07-18 Rahul Singh , Prashant Singh , Ganesh Balasubramanian

This paper introduces monolayer molybdenum disulfide (MoS2) based junction-less (JL) field-effect transistor (FET) and evaluates its performance at the smallest foreseeable (5.9 nm) transistor channel length as per the International…

介观与纳米尺度物理 · 物理学 2015-09-03 Wei Cao , Jiahao Kang , Kaustav Banerjee

Hybridization effects play a crucial role in determining the electronic properties of hybrid inorganic/organic interfaces. To gain insight into these important interactions, we perform a first-principles study based on hybrid…

材料科学 · 物理学 2022-04-06 Jannis Krumland , Caterina Cocchi

We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of…

介观与纳米尺度物理 · 物理学 2016-02-05 Evgeniy Ponomarev , Ignacio Gutiérrez-Lezama , Nicolas Ubrig , Alberto F. Morpurgo

The research on multiferrocity and magnetoelectric coupling in metal-organic system is rare. Very few hybrid organic-inorganic frameworks (HOIF) exhibit direct magnetoelectric coupling (coupling between spins and dipoles) and also…

Excellent gate electrostatics in field effect transistors (FETs) based on two-dimensional transition metal dichalcogenide (2D TMD) channels can dramatically decrease static power dissipation. Energy efficient FETs operate in enhancement…

We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance…

介观与纳米尺度物理 · 物理学 2015-01-30 Wan Sik Hwang , Maja Remskar , Rusen Yan , Tom Kosel , Jong Kyung Park , Byung Jin Cho , Wilfried Haensch , Huili , Xing , Alan Seabaugh , Debdeep Jena

Molecular self-assembly has been extensively used for surface modification of metals and oxides for a variety of applications, including molecular and organic electronics. One of the goals of this research is to learn how the electronic…

材料科学 · 物理学 2009-11-13 M. F. Calhoun , J. Sanchez , D. Olaya , M. E. Gershenson , V. Podzorov*

Integration of electrical contacts into van der Waals (vdW) heterostructures is critical for realizing electronic and optoelectronic functionalities. However, to date no scalable methodology for gaining electrical access to buried monolayer…

We report electrical characterization of monolayer molybdenum disulfide (MoS2) devices using a thin layer of polymer electrolyte consisting of poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO4) as both a contact-barrier reducer and…