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The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic properties of devices based on 2D materials. Using ABA-stacked…

Tunneling of quasiparticles between two nearly-aligned graphene sheets produces resonant current-voltage characteristics because of the quasi-exact conservation of in-plane momentum. We claim that, in this regime, vertical transport in…

介观与纳米尺度物理 · 物理学 2016-03-29 Karina A. Guerrero-Becerra , Andrea Tomadin , Marco Polini

Unlike the electrical conductance that can be widely modulated within the same material even in deep nanoscale devices, tuning the thermal conductance within a single material system or nanostructure is extremely challenging and requires a…

介观与纳米尺度物理 · 物理学 2021-05-12 Georgia T. Papadakis , Christopher J. Ciccarino , Lingling Fan , Meir Orenstein , Prineha Narang , Shanhui Fan

Moir\'e superlattices formed by vertically stacking van der Waals layers host a rich variety of correlated electronic phases and function as novel photonic materials. The moir\'e potential of the superlattice, however, is fixed by the…

Van der Waal's heterostrucutures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ channel/tunnel-barrier/channel geometries. However, during…

介观与纳米尺度物理 · 物理学 2016-10-10 Amithraj Valsaraj , Leonard F. Register , Emanuel Tutuc , Sanjay K. Banerjee

Van der Waals assembly enables exquisite design of electronic states in two-dimensional (2D) materials, often by superimposing a long-wavelength periodic potential on a crystal lattice using moir\'e superlattices. Here we show that…

We investigate theoretically resonant tunneling through double-bended graphene nanoribbon structures, i.e., armchair-edged graphene nanoribbons (AGNRs) in between two semi-infinite zigzag graphene nanoribbon (ZGNR) leads. Our numerical…

介观与纳米尺度物理 · 物理学 2009-11-13 Z. Z. Zhang , Kai Chang , K. S. Chan

Two-dimensional (2D) materials such as graphene and hexagonal boron nitride (hBN) provide a versatile platform for quantum electronics. Experiments generally require encapsulating graphene within hBN flakes, forming a protective van der…

The introduction of 'twist' or relative rotation between two atomically thin van der Waals (vdW) membranes gives rise to periodic Moire potential, leading to a substantial altercation of the band structure of the planar assembly. While most…

介观与纳米尺度物理 · 物理学 2020-12-30 Phanibhusan S Mahapatra , Bhaskar Ghawri , Kenji Watanabe , Takashi Taniguchi , Subroto Mukerjee , Arindam Ghosh

In this paper we study in detail the effect of the rotational alignment between a hexagonal boron nitride (hBN) slab and the graphene layers in the vertical current of a a graphene-hBN-graphene device. We show how for small rotational…

介观与纳米尺度物理 · 物理学 2016-06-03 B. Amorim , R. M. Ribeiro , N. M. R. Peres

Sliding and twisting van der Waals layers with respect to each other gives rise to moir\'e structures with emergent electronic properties. Electrons in these moir\'e structures feel weak potentials that are typically in the tens of…

介观与纳米尺度物理 · 物理学 2020-07-14 Drew Edelberg , Hemant Kumar , Vivek Shenoy , Héctor Ochoa , Abhay N. Pasupathy

We investigate tunneling in metal-insulator-metal junctions employing few atomic layers of hexagonal boron nitride (hBN) as the insulating barrier. While the low-bias tunnel resistance increases nearly exponentially with barrier thickness,…

介观与纳米尺度物理 · 物理学 2019-03-26 U. Chandni , K. Watanabe , T. Taniguchi , J. P. Eisenstein

Van der Waals encapsulation of two-dimensional materials within hexagonal boron nitride (h-BN) stacks has proven to be a promising way to create ultrahigh-performance electronic devices. However, contemporary approaches for achieving van…

Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to develop two-dimensional (2D) quantum sensors. In this…

Van der Waals heterostructures formed by stacking of various two-dimensional materials are promising in electronic applications. However, the performances of most reported electronic devices based on van der Waals heterostructures are far…

介观与纳米尺度物理 · 物理学 2019-04-04 Wei Li , Xiang Xiao , Huilong Xu

Twisted graphene multilayers have demonstrated to yield a versatile playground to engineer controllable electronic states. Here, by combining first-principles calculations and low-energy models, we demonstrate that twisted graphene…

介观与纳米尺度物理 · 物理学 2020-09-04 Alejandro Lopez-Bezanilla , J. L. Lado

Interfaces of van der Waals (vdW) materials such as graphite and hexagonal boron nitride (hBN) exhibit low-friction sliding due to their atomically-flat surfaces and weak vdW bonding. We demonstrate that microfabricated gold also slides…

Controlling the stacking and rotational registry of graphene layers provides a powerful handle on atomic-scale structural reconstructions that alter the electronic landscape at the nanoscale. In particular, this governs how massless and…

Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices,…

Plasmons in van der Waals heterostructures comprised of graphene and related layered materials demonstrate deep subwavelength confinement and large propagation length. In this letter, we show that graphene-insulator-graphene tunnel…

介观与纳米尺度物理 · 物理学 2016-09-14 Dmitry Svintsov , Zhanna Devizorova , Taiichi Otsuji , Victor Ryzhii