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Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/Germanium interface as a function of in-vacuum thermal annealing. Specifically, it is found that graphene becomes…

Graphene oxide (GO) is a nanofilm composed of graphene with various oxygen functional groups attached. GO is of interest due to its unique mechanical-enhancement properties, its tunable electronic properties, and its potential use in the…

应用物理 · 物理学 2019-07-16 P. Adamson , S. Williams

Graphene forms from a relatively dense, tightly-bound C-adatom gas, when elemental C is deposited on or segregates to the Ru(0001) surface. Nonlinearity of the graphene growth rate with C adatom density suggests that growth proceeds by…

材料科学 · 物理学 2010-12-14 E. Loginova , N. C. Bartelt , P. J. Feibelman , K. F. McCarty

Electron beam exposure is a commonly used tool for fabricating and imaging graphene-based devices. Here we present a study of the effects of electron-beam irradiation on the electronic transport properties of graphene and the operation of…

介观与纳米尺度物理 · 物理学 2015-05-19 Isaac Childres , Luis A. Jauregui , Mike Foxe , Jifa Tian , Romaneh Jalilian , Igor Jovanovic , Yong P. Chen

Graphene is one of the most promising 2D materials for various applications due to its unique electronic properties and high thermal stability. In previous studies, it was shown that when graphene is deposited onto some transition metal…

材料科学 · 物理学 2018-02-13 Tianbai Li , Jory A. Yarmoff

The deformation of monolayer graphene, produced by chemical vapor deposition (CVD), on a polyester film substrate has been investigated through the use of Raman spectroscopy. It has been found that the microstructure of the CVD graphene…

Mechanically exfoliated graphene layers deposited on SiO2 substrate were irradiated with Ar+ ions in order to experimentally study the effect of atomic scale defects and disorder on the low-energy electronic structure of graphene. The…

介观与纳米尺度物理 · 物理学 2009-01-21 Levente Tapaszto , Gergely Dobrik , Peter Nemes-Incze , Gabor Vertesy , Philippe Lambin , Laszlo P Biro

The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires…

Here we report a facile method to generate a high density of point defects in graphene on metal foil and show how the point defects affect the electronic structures of graphene layers. Our scanning tunneling microscopy (STM) measurements,…

介观与纳米尺度物理 · 物理学 2013-10-08 Hui Yan , Cheng-Cheng Liu , Ke-Ke Bai , Xuejiao Wang , Mengxi Liu , Wei Yan , Lan Meng , Yanfeng Zhang , Zhongfan Liu , Jia-Cai Nie , Yugui Yao , Lin He

We report nanocrystalline carbon impurities coexisting with graphene synthesized via chemical vapor deposition (CVD) on platinum. We observe micron-size island-like impurity layers, which can easily be mistaken for second graphene layers in…

介观与纳米尺度物理 · 物理学 2014-08-04 Jinglei Ping , Michael S. Fuhrer

Deviations from the perfect atomic arrangements in crystals play an important role in affecting their properties. Similarly, diffusion of such deviations is behind many microstructural changes in solids. However, observation of point defect…

材料科学 · 物理学 2014-07-28 Jani Kotakoski , Clemens Mangler , Jannik C. Meyer

Graphene and few-layer graphene at high bias expose a wealth of phenomena due to the high temperatures reached. With in-situ transmission electron microscopy (TEM) we observe directly how the current modifies the structure, and vice versa.…

介观与纳米尺度物理 · 物理学 2013-01-30 Amelia Barreiro , Felix Boerrnert , Mark H. Ruemmeli , Bernd Buechner , Lieven M. K. Vandersypen

Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on…

材料科学 · 物理学 2019-06-14 B. C. Worley , S. Kim , T. J. Ha , S. Park , R. Haws , P. Rossky , D. Akinwande , A. Dodabalapur

Nanometer-scale graphene objects are attracting much research interest because of newly emerging properties originating from quantum confinement effects. We present Raman spectroscopy studies of graphene nanoribbons (GNRs) which are known…

材料科学 · 物理学 2012-01-23 Sunmin Ryu , Janina Maultzsch , Melinda Y. Han , Philip Kim , Louis E. Brus

The graphene-insulator-semiconductor-structured electron source has garnered significant attention due to its high electron emission efficiency and highly monochromatic electron emission. Graphene, with its c-axis orientation and…

Electrochemical exfoliation is one of the most promising methods for scalable production of graphene. However, limited understanding of its Raman spectrum as well as lack of measurement standards for graphene strongly limit its industrial…

This study reports the successful synthesis of multilayered graphene sheets via microwave atmospheric pressure plasma. This innovative approach streamlines and expedites graphene production and other carbon nanostructures, eliminating the…

等离子体物理 · 物理学 2024-03-07 Waqas Iqbal , Najeeb-ur-Rehman , Niaz Wali

Raman Spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene…

介观与纳米尺度物理 · 物理学 2012-07-10 Axel Eckmann , Alexandre Felten , Artem Mishchenko , Liam Britnell , Ralph Krupke , Kostya S. Novoselov , Cinzia Casiraghi

Potential structural modifications of graphene exposed to gaseous tritium are important for membrane-based hydrogen isotope separation. Such modifications cannot be explained by electron irradiation alone. Instead, tritiation, caused by the…

We report a Raman spectroscopy study of graphene field-effect transistors (GFET) with a controlled amount of defects introduced in graphene by exposure to electron-beam irradiation. Raman spectra are taken at T = 8 K over a range of back…

材料科学 · 物理学 2015-06-22 Isaac Childres , Luis A. Jauregui , Yong P. Chen