相关论文: Weak Antilocalization Effect and Noncentrosymmetri…
We have investigated the weak antilocalization (WAL) effect in the p-type Bi$_2$Se$_{2.1}$Te$_{0.9}$ topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The…
Weak antilocalization (WAL) is expected whenever strong spin-orbit coupling or scattering comes into play. Spin-orbit coupling in the bulk states of a topological insulator is very strong, enough to result in the topological phase…
Weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge carrier concentrations. At low charge carrier density the WAL curves scale with the normal component of the magnetic field,…
Weak antilocalization (WAL) effect is commonly observed in 2D systems, or 3D topological insulators, topological semimetal systems. Here we report the clear sign of WAL effect in high quality Ta$_{0.7}$Nb$_{0.3}$Sb$_2$ single crystals, in…
We report transport studies on the layered van der Waals topological crystalline insulator Ta$_2$Pd$_3$Te$_5$. The temperature-dependent resistance at high temperature is dominated by a bulk insulating gap and tend to saturate at low…
We evaluate quantum corrections to conductivity in an electrically gated thin film of a three-dimensional (3D) topological insulator (TI). We derive approximate analytical expressions for the low-field magnetoresistance as a function of…
We report results of a magneto-transport study on thin films of the topological semi-metal candidate PdSb$_{2}$ (PS). We observe a positive correction to magneto-conductivity at low temperatures, which is a signature of weak…
The anomalous magnetoresistance caused by the weak antilocalization (WAL) effects in 200-nm HgTe films is experimentally studied. The film is a high quality 3D topological insulator with much stronger spatial separation of surface states…
Topological insulators are new kind of Dirac materials that possess bulk insulating and surface conducting behavior. They are basically known for their unique electronic properties at the surface. Here we present the magneto-transport…
We report an extensive study of the noncentrosymmetric half-Heusler superconductor YPtBi, revealing an unusual relation between bulk superconductivity and the possible appearance of surface superconductivity on the (111) oriented surface,…
New materials such as nodal-line semimetals offer a unique setting for novel transport phenomena. Here, we calculate the quantum correction to conductivity in a disordered nodal-line semimetal. The torus-shaped Fermi surface and encircled…
We report superconductivity in the ternary half-Heusler compound LuPtBi, with Tc = 1.0 K and Hc2 = 1.6 T. The crystal structure of LuPtBi lacks inversion symmetry, hence the material is a noncentrosymmetric superconductor. Magnetotransport…
Weak antilocalization (WAL), an increase in the electrical conductivity at low temperatures associated with the suppression of electron localization due to quantum interference effects, is often observed in topological materials. In this…
We have studied the carrier transport in two topological insulator (TI) Bi$_{2}$Te$_{3}$ microflakes between 0.3 and 10 K and under applied backgate voltages ($V_{\rm BG}$). Logarithmic temperature dependent resistance corrections due to…
The binary pnictide semimetals have attracted considerable attention due to their fantastic physical properties that include topological effects, negative magnetoresistance, Weyl fermions and large non-saturation magnetoresistance. In this…
We report the synthesis, structural characterization, and investigation of electrical transport, magnetic and specific heat properties of bulk semiconducting layered material Ta$_2$Ni$_3$Te$_5$. Ta$_2$Ni$_3$Te$_5$ crystallizes in the…
We study weak anti-localization (WAL) effect in topological insulator Bi2Te3 thin films at low temperatures. Two-dimensional WAL effect associated with surface carriers is revealed in the tilted magnetic field dependence of…
We reanalyze some of the critical transport experiments and provide a coherent understanding of the current generation of topological insulators (TIs). Currently TI transport studies abound with widely varying claims of the surface and bulk…
We report on van der Waals epitaxial growth, materials characterization and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered, good-quality crystalline nanosheets of BTS are obtained on…
The two-dimensional (2D) surface state of the three-dimensional strong topological insulator (STI) is fundamentally distinct from other 2D electron systems in that the Fermi arc encircles an odd number of Dirac points. The TI surface is in…