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Recent theories and experiments have suggested that strong spin-orbit coupling effects in certain band insulators can give rise to a new phase of quantum matter, the so-called topological insulator, which can show macroscopic entanglement…

介观与纳米尺度物理 · 物理学 2009-08-26 Y. Xia , D. Qian , D. Hsieh , L. Wray , A. Pal , H. Lin , A. Bansil , D. Grauer , Y. S. Hor , R. J. Cava , M. Z. Hasan

The helical spin texture on the surface of topological crystalline insulators (TCI) makes these materials attractive for application in spintronics. In this work, spin-polarization and electronic structure of surface states of…

The surface of a topological crystalline insulator (TCI) carries an even number of Dirac cones protected by crystalline symmetry. We epitaxially grew high quality Pb$_{1-x}$Sn$_x$Te(111) films and investigated the TCI phase by in-situ…

In light of recent progress in the study of amorphous topological phases, we investigate the effects of structural disorder on the topological properties of a two-dimensional quantum spin Hall insulator modeled by the Bernevig-Hughes-Zhang…

无序系统与神经网络 · 物理学 2025-10-28 Ranadeep Roy , Yuan-Ming Lu

We show that electrons in ordinary III-V semiconductor double wells with an in-plane modulating periodic potential and inter well spin-orbit interaction are tunable Topological Insulators (TIs). Here the essential TI ingredients, namely,…

介观与纳米尺度物理 · 物理学 2015-02-10 Sigurdur I. Erlingsson , J. Carlos Egues

We study the topologically non-trivial semi-metals by means of the 6-band Kane model. Existence of surface states is explicitly demonstrated by calculating the LDOS on the material surface. In the strain free condition, surface states are…

介观与纳米尺度物理 · 物理学 2011-04-14 Rui-Lin Chu , Wen-Yu Shan , Jie Lu , Shun-Qing Shen

We report on the electronic structure of $\alpha$-Sn films in the very low thickness regime grown on InSb(111)A. High-resolution low photon energies angle-resolved photoemission (ARPES) allows for the direct observation of the linearly…

We describe a three-dimensional crystalline topological insulator (TI) phase of matter that exhibits spontaneous polarization. This polarization results from the presence of (approximately) flat bands on the surface of such TIs. These flat…

材料科学 · 物理学 2021-06-16 J. Nissinen , Tero T. Heikkila , G. E. Volovik

We study the three-dimensional topological insulator (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ in its ultrathin limit i.e. when the thickness is of the same order as the surface state penetration depth. It is expected that in this limit a…

介观与纳米尺度物理 · 物理学 2025-11-19 Feike van Veen , Sofie Kölling , Stijn R. de Wit , Roel Metsch , Daniel Rosenbach , Chuan Li , Alexander Brinkman

Usually the quantum spin Hall states are expected to possess gapless, helical edge modes. Are there clean, non-interacting, quantum spin Hall states without gapless, edge modes? We show the generic, $n$-fold-symmetric, momentum planes of…

介观与纳米尺度物理 · 物理学 2022-06-10 Alexander C. Tyner , Shouvik Sur , Danilo Puggioni , James M. Rondinelli , Pallab Goswami

Topological quantum phase transitions (TQPTs) in a material induced by external perturbations are often characterized by band touching points in the Brillouin zone. The low-energy excitations near the degenerate band touching points host…

材料科学 · 物理学 2018-05-07 Rinkle Juneja , Ravindra Shinde , Abhishek K. Singh

By breaking the inversion symmetry of the three-dimensional Dirac metal Na$_3$Bi, we realize topological insulator (TI) phases in the known compound NaBaBi using $ab~initio$ calculations. Two distinct TI phases emerge: one phase is due to…

材料科学 · 物理学 2016-05-11 Yan Sun , Qing-Ze Wang , Shu-Chun Wu , Claudia Felser , Chao-Xing Liu , Binghai Yan

Topological phases, especially topological crystalline insulators (TCIs), have been intensively explored observed experimentally in three-dimensional (3D) materials. However, the two-dimensional (2D) films are explored much less than 3D…

We measured the response of the surface state spectrum of epitaxial Sb2Te3 thin films to applied gate electric fields by low temperature scanning tunneling microscopy. The gate dependent shift of the Fermi level and the screening effect…

介观与纳米尺度物理 · 物理学 2014-05-07 Tong Zhang , Jeonghoon Ha , Niv Levy , Young Kuk , Joseph Stroscio

Topological insulators are non-trivial quantum states of matter which exhibit a gap in the electronic structure of their bulk form, but a gapless metallic electronic spectrum at the surface. Here, we predict a uniaxial strain induced…

材料科学 · 物理学 2015-06-22 Koushik Pal , Umesh V. Waghmare

The surface states of the three dimensional (3D) Topological Insulators are described by two-dimensional (2D) massless dirac equation. A gate voltage induced one dimensional potential barrier on such surface creates a discrete bound state…

介观与纳米尺度物理 · 物理学 2015-12-09 Puja Mondal , Sankalpa Ghosh

We investigate the effect of disorder on topologically nontrivial states in a two dimension (2D) mechanical system. We first propose a quantum spin Hall (QSH) insulator based on an out-of-plane spring-mass model and analytically study the…

应用物理 · 物理学 2023-09-01 Xiaotian Shi , Rajesh Chaunsali , Georgios Theocharis , Huaqing Huang , Rui Zhu , Jinkyu Yang

We study the vanishing of the topological properties of a quantum spin Hall insulator induced by a deformation of the band structure that interpolates between the Dirac and the semi-Dirac limits of a tight-binding model on a honeycomb…

介观与纳米尺度物理 · 物理学 2022-06-22 Sayan Mondal , Saurabh Basu

Nonmagnetic topological insulators (TIs) are known for their robust metallic surface/edge states that are protected by time-reversal symmetry, making them promising candidates for next-generation spintronic and nanoelectronic devices.…

介观与纳米尺度物理 · 物理学 2025-11-14 Arjyama Bordoloi , Daniel Kaplan , Sobhit Singh

A topological insulator is characterized by spin-momentum locking on its boundary. The spin momentum locking on the surface of a three dimensional topological insulator leads to the existence of a non-trivial Berry's phase which leads to…

介观与纳米尺度物理 · 物理学 2012-06-06 Su-Yang Xu , L. A. Wray , Y. Xia , R. Shankar , S. Jia , A. Fedorov , J. H. Dil , F. Meier , B. Slomski , J. Osterwalder , R. J. Cava , M. Z. Hasan