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相关论文: Proximity induced topological state in graphene

200 篇论文

While graphene is a semi-metal, recently synthesized hydrogenated graphene called graphane, turns out to be an insulator. We have probed the metal insulator Transition in graphene-graphane system within the framework of density functional…

介观与纳米尺度物理 · 物理学 2009-11-10 Prachi Chandrachud , Bhalchandra S. Pujari , D. G. Kanhere

Bilayer graphene encapsulated in tungsten diselenide can host a weak topological phase with pairs of helical edge states. The electrical tunability of this phase makes it an ideal platform to investigate unique topological effects at zero…

3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial…

Proximity effects induced in the 2D Dirac material graphene potentially open access to novel and intriguing physical phenomena. Thus far, the coupling between graphene and ferromagnetic insulators has been experimentally established.…

Several small-bandgap semiconductors are now known to have protected metallic surface states as a consequence of the topology of the bulk electron wavefunctions. The known "topological insulators" with this behavior include the important…

介观与纳米尺度物理 · 物理学 2013-01-01 Pouyan Ghaemi , Roger Mong , Joel E. Moore

We demonstrate theoretically that interface engineering can drive Germanium, one of the most commonly-used semiconductors, into topological insulating phase. Utilizing giant electric fields generated by charge accumulation at GaAs/Ge/GaAs…

介观与纳米尺度物理 · 物理学 2015-06-17 Dong Zhang , Wenkai Lou , Maosheng Miao , Shou-cheng Zhang , Kai Chang

Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their…

介观与纳米尺度物理 · 物理学 2018-11-14 W. Jaskólski , M. Pelc , Garnett W. Bryant , Leonor Chico , A. Ayuela

Higher-order topological insulators are newly proposed topological phases of matter, whose bulk topology manifests as localized modes at two- or higher-dimensional lower boundaries. In this work, we propose the twisted bilayer graphenes…

介观与纳米尺度物理 · 物理学 2019-11-27 Moon Jip Park , Youngkuk Kim , Gil Young Cho , SungBin Lee

We demonstrate the existence of localized states in close vicinity of a linear defect in graphene. These states have insulating or conducting character. Insulating states form a flat band, while conducting states present a slowdown of the…

介观与纳米尺度物理 · 物理学 2020-06-03 Francesco Romeo

We develop a theory of topological transitions in a Floquet topological insulator, using graphene irradiated by circularly polarized light as a concrete realization. We demonstrate that a hallmark signature of such transitions in a static…

介观与纳米尺度物理 · 物理学 2014-12-12 Arijit Kundu , H. A. Fertig , Babak Seradjeh

The formation of image-potential states at the interface between a graphene layer and a metal surface is studied by means of model calculations. An analytical one-dimensional model-potential for the combined system is constructed and used…

介观与纳米尺度物理 · 物理学 2016-06-23 N. Armbrust , J. Güdde , U. Höfer

An established way of realizing topologically protected states in a two-dimensional electron gas is by applying a perpendicular magnetic field thus creating quantum Hall edge channels. In electrostatically gapped bilayer graphene…

介观与纳米尺度物理 · 物理学 2022-08-17 Fabian R. Geisenhof , Felix Winterer , Anna M. Seiler , Jakob Lenz , Ivar Martin , R. Thomas Weitz

The Dirac cone on a surface of a topological insulator shows linear dispersion analogous to optics and its velocity depends on materials. We consider a junction of two topological insulators with different velocities, and calculate the…

介观与纳米尺度物理 · 物理学 2011-10-18 Ryuji Takahashi , Shuichi Murakami

The interplay between topology and interactions on the edge of a two dimensional topological insulator with time reversal symmetry is studied. We consider a simple non-interacting system of three helical channels with an inherent…

强关联电子 · 物理学 2019-02-19 Raul A. Santos , D. B. Gutman , Sam T. Carr

Graphene, the atomic-thin layer of carbon atoms, was first isolated on an insulating substrate in 2004 by two groups in Manchester University [1, 2] and Columbia [3]. Those milestone experiments established the Dirac nature of the charge…

介观与纳米尺度物理 · 物理学 2013-03-26 J. Cayssol

The search for new realization of topologically protected edge states is an active area of research. We show that a tilt boundary in gated multi-layer graphene supports topologically protected gapless kink states, associated with quantum…

介观与纳米尺度物理 · 物理学 2013-06-27 Abolhassan Vaezi , Yufeng Liang , Darryl H. Ngai , Li Yang , Eun-Ah Kim

The low energy physics of both graphene and surface states of three-dimensional topological insulators is described by gapless Dirac fermions with linear dispersion. In this work, we predict the emergence of a "heavy" Dirac fermion in a…

介观与纳米尺度物理 · 物理学 2016-10-17 Wendong Cao , Rui-Xing Zhang , Peizhe Tang , Gang Yang , Jorge Sofo , Wenhui Duan , Chao-Xing Liu

In integrating topological insulators (TIs) with conventional materials, one crucial issue is how the topological surface states (TSS) will behave in such heterostructures. We use first-principles approaches to establish accurate tunability…

We demonstrate the electrical control of topological interface modes at the interface between a graphene-based photonic superlattice and a uniform dielectric medium. Specifically, by integrating graphene sheets into the unit cell of…

光学 · 物理学 2025-09-22 Hanying Deng , Jing Deng , Yiling Chen , Yingji He , Fangwei Ye

In this report we give a brief introduction on the occurrence of topologically protected one-dimensional electronic states in group IV two-dimensional graphene-like materials. We discuss the effect of spin-orbit coupling on the electronic…

介观与纳米尺度物理 · 物理学 2023-11-28 H. J. W. Zandvliet , J. D. Verbakel , Q. Yao , K. Sotthewes , P. Bampoulis