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相关论文: Proximity induced topological state in graphene

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We have studied the electron transport properties of topological insulator-related material Bi2Se3 near the superconducting Pb-Bi2Se3 interface, and found that a superconducting state is induced over an extended volume in Bi2Se3. This state…

超导电性 · 物理学 2012-06-28 Fan Yang , Fanming Qu , Jie Shen , Yue Ding , Jun Chen , Zhongqing Ji , Guangtong Liu , Jie Fan , Changli Yang , Liang Fu , Li Lu

Hybrid graphene-topological insulator (TI) devices were fabricated using a mechanical transfer method and studied via electronic transport. Devices consisting of bilayer graphene (BLG) under the TI Bi$_2$Se$_3$ exhibit differential…

We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is…

As the thickness of a three-dimensional (3D) topological insulator (TI) becomes comparable to the penetration depth of the surface states, quantum tunneling between surfaces turns their gapless Dirac electronic structure into a gapped…

介观与纳米尺度物理 · 物理学 2020-04-13 Su Kong Chong , Lizhe Liu , Taylor D. Sparks , Feng Liu , Vikram V. Deshpande

Strain can induce a topological phase transition in bismuth dichalcogenides. We present the phase diagram for 3D topological insulators Bi$_2$Te$_3$, Sb$_2$Te$_3$, Bi$_2$Se$_3$ and Sb$_2$Se$_3$ with uniaxial and biaxal strain, which show…

介观与纳米尺度物理 · 物理学 2017-05-24 Hugo Aramberri , M. Carmen Muñoz

We report that the {\pi}-electrons of graphene can be spin-polarized to create a phase with a significant spin-orbit gap at the Dirac point (DP) using a graphene-interfaced topological insulator hybrid material. We have grown epitaxial…

We present a comprehensive theoretical study of the topological surface states (TSS) of Bi$_2$Se$_3$, a 3D topological insulator, epitaxially grown on twisted bilayer graphene (tBG). The moir\'e potential induced by tBG folds the TSS Dirac…

介观与纳米尺度物理 · 物理学 2025-05-06 Yoonkang Kim

Certain insulating materials with strong spin-orbit coupling can conduct currents along their edges or surfaces. This phenomenon arises from the non-trivial topological properties of the electronic band-structure, and is somewhat similar to…

强关联电子 · 物理学 2013-08-22 Predrag Nikolic , Tanja Duric , Zlatko Tesanovic

Heterostructures of Dirac materials such as graphene and topological insulators provide interesting platforms to explore exotic quantum states of electrons in solids. Here we study the electronic structure of graphene-Sb2Te3 heterostructure…

介观与纳米尺度物理 · 物理学 2015-06-05 Kyung-Hwan Jin , Seung-Hoon Jhi

We show that a semiconductor thin film can acquire a non-trivial spin texture due to the proximity effect induced by a topological insulator. The effect stems from coupling to the topological surface states and is present even when the…

介观与纳米尺度物理 · 物理学 2015-03-19 Jimmy A. Hutasoit , Tudor D. Stanescu

Graphene was the first material predicted to be a time-reversal-invariant topological insulator; however, the insulating gap is immeasurably small owing to the weakness of spin-orbit interactions in graphene. A recent experiment [1]…

介观与纳米尺度物理 · 物理学 2015-06-05 Pouyan Ghaemi , Sarang Gopalakrishnan , Taylor L. Hughes

Topological insulators (TIs) are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to TI-based heterostructures, in…

材料科学 · 物理学 2014-01-17 Xiaoguang Li , Gufeng Zhang , Guangfen Wu , Hua Chen , Dimitrie Culcer , Zhenyu Zhang

We present a detailed study of the electronic and spin-orbit properties of single and bilayer graphene in proximity to the topological insulator Bi$_2$Se$_3$. Our approach is based on first-principles calculations, combined with symmetry…

介观与纳米尺度物理 · 物理学 2019-10-30 Klaus Zollner , Jaroslav Fabian

The magnetic proximity effect is a fundamental feature of heterostructures composed of layers of topological insulators and magnetic materials since it underlies many potential applications in devices with novel quantum functionality.…

材料科学 · 物理学 2013-11-25 S. V. Eremeev , V. N. Men'shov , V. V. Tugushev , P. M. Echenique , E. V. Chulkov

Topological optical states exhibit unique immunity to defects and the ability to propagate without losses rendering them ideal for photonic applications.A powerful class of such states is based on time-reversal symmetry breaking of the…

光学 · 物理学 2018-02-07 Deng Pan , Rui Yu , Hongxing Xu , F. Javier García de Abajo

In the presence of a circularly polarized mid-infrared radiation graphene develops dynamical band gaps in its quasi-energy band structure and becomes a Floquet insulator. Here we analyze how topologically protected edge states arise inside…

介观与纳米尺度物理 · 物理学 2014-09-23 Gonzalo Usaj , P. M. Perez-Piskunow , L. E. F. Foa Torres , C. A. Balseiro

Van der Waals heterostructures have been used to tailor atomic layers into various artificial materials through interactions at heterointerfaces. The interplay between the band gap created by the band folding of the interfacial potential…

We show that gated bilayer graphene hosts a strong topological insulator (TI) phase in the presence of Rashba spin-orbit (SO) coupling. We find that gated bilayer graphene under preserved time-reversal symmetry is a quantum valley Hall…

材料科学 · 物理学 2011-12-15 Zhenhua Qiao , Wang-Kong Tse , Hua Jiang , Yugui Yao , Qian Niu

The recently discovered three dimensional or bulk topological insulators are expected to exhibit exotic quantum phenomena. It is believed that a trivial insulator can be twisted into a topological state by modulating the spin-orbit…

介观与纳米尺度物理 · 物理学 2011-10-24 Su-Yang Xu , Y. Xia , L. A. Wray , D. Qian , Shuang Jia , J. H. Dil , F. Meier , J. Osterwalder , B. Slomski , H. Lin , R. J. Cava , M. Z. Hasan

The low-energy physics of graphene is described by relativistic Dirac fermions with spin and valley degrees of freedom. Mechanical strain can be used to create a pseudo magnetic field pointing to opposite directions in the two valleys. We…

强关联电子 · 物理学 2017-08-29 Ying-Hai Wu , Tao Shi , G. J. Sreejith , Zheng-Xin Liu