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相关论文: The Mott transition in the strong coupling perturb…

200 篇论文

The interaction-driven Mott transition in the half-filled Hubbard model is a first-order phase transition that terminates at a critical point $(T_\mathrm{c},U_\mathrm{c})$ in the temperature-interaction plane $T-U$. A number of crossovers…

强关联电子 · 物理学 2020-04-07 A. Reymbaut , M. Boulay , L. Fratino , P. Sémon , Wei Wu , G. Sordi , A. -M. S. Tremblay

We investigate the Mott transition in the anisotropic kagom\'e lattice Hubbard model using the cellular dynamical mean field theory combined with continuous-time quantum Monte Carlo simulations. By calculating the double occupancy and the…

强关联电子 · 物理学 2015-05-19 Yuta Furukawa , Takuma Ohashi , Yohta Koyama , Norio Kawakami

Ternary flavor mixtures of ultracold fermionic atoms in an optical lattice are studied in the case of equal, repulsive on-site interactions U>0. The corresponding SU(3) invariant Hubbard model is solved numerically exactly within dynamical…

量子气体 · 物理学 2009-11-19 E. V. Gorelik , N. Blümer

Quasiparticle bands of the two-dimensional Hubbard model are calculated using the Roth two-pole approximation to the one particle Green's function. Excellent agreement is obtained with recent Monte Carlo calculations, including an anomalous…

凝聚态物理 · 物理学 2016-08-31 J. Beenen , D. M. Edwards

A fundamental issue of the Mott transition is how electrons behaving as single particles carrying spin and charge in a metal change into those exhibiting separated spin and charge excitations (low-energy spin excitation and high-energy…

强关联电子 · 物理学 2023-09-13 Masanori Kohno

We present a $T=0K$ renormalization group (RG) phase diagram for the electronic Hubbard model in two dimensions on the square lattice at, and away from, half filling. The RG procedure treats quantum fluctuations in the single particle…

强关联电子 · 物理学 2020-06-24 Anirban Mukherjee , Siddhartha Lal

The SU(N) Hubbard model is a natural extension of the SU(2) model. However, even the N=3 case remains poorly understood. We report a substantially new ground-state phase diagram of the square lattice SU(3) Fermi-Hubbard model. Using a…

强关联电子 · 物理学 2025-10-28 Samuel Bird , Sebastian Huber , Jannes Nys

We expose the relevance of double occupancy conservation symmetry in application of the Hubbard-I approach to strongly correlated electron systems. We propose the utility of a composite method, viz. the Hubbard-I method in conjunction with…

强关联电子 · 物理学 2013-01-10 Przemyslaw R. Grzybowski , Ravindra W. Chhajlany

We study the Anderson disordered Hubbard model on the honeycomb lattice. The Hubbard term is han- dled with strong-coupling perturbation theory which encodes the Mott transition physics into a rich dynamical structure of a local…

强关联电子 · 物理学 2018-12-06 Alireza Habibi , Elaheh Adibi , S. A. Jafari

We investigate the local moment formation in the half-filled SU($N$) Hubbard model under a staggered ionic potential. As the Hubbard $U$ increases, the charge fluctuations are suppressed and eventually frozen when $U$ is above a critical…

强关联电子 · 物理学 2022-12-14 Shan-Yue Wang , Da Wang , Qiang-Hua Wang

We investigate the metal-insulator transition of the one-dimensional SU(N) Hubbard model for repulsive interaction. Using the bosonization approach a Mott transition in the charge sector at half-filling (k_F=\pi/Na_0) is conjectured for N >…

强关联电子 · 物理学 2009-10-31 Roland Assaraf , Patrick Azaria , Michel Caffarel , Philippe Lecheminant

We analyze the highly non-perturbative regime surrounding the Mott-Hubbard metal-to-insulator transition (MIT) by means of dynamical mean field theory calculations at the two-particle level. By extending the results of Sch\"afer, et al.…

Strongly correlated materials often undergo a Mott metal-insulator transition, which is tipically first-order, as a function of control parameters like pressure. Upon doping, rich phase diagrams with competing instabilities are found. Yet,…

The electron spectrum structure in the half-filled Hubbard model is considered in terms of the one-particle Green's functions within many-electron representation. A simple analytical generalization of the single-site Hubbard-III…

强关联电子 · 物理学 2009-11-07 V. Yu. Irkhin , A. V. Zarubin

The strong-coupling perturbation theory of the Hubbard model is presented and carried out to order (t/U)^5 for the one-particle Green function in arbitrary dimension. The spectral weight A(k,omega) is expressed as a Jacobi continued…

强关联电子 · 物理学 2009-10-31 Stephane Pairault , David Senechal , A. -M. S. Tremblay

Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal-insulator transition. We investigate the Mott transition in a Hubbard model by…

强关联电子 · 物理学 2023-11-29 Yuekun Niu , Yu Ni , Jianli Wang , Leiming Chen , Ye Xing , Yun Song , Shiping Feng

The underlying Fermi surface is a key concept for strongly-interacting electron models and has been introduced to generalize the usual notion of the Fermi surface to generic (superconducting or insulating) systems. By using improved…

强关联电子 · 物理学 2013-05-30 Luca F. Tocchio , Federico Becca , Claudius Gros

We study the magnetic properties around the Mott transition in the Kagom\'e lattice Hubbard model by the cellular dynamical mean field theory combined with quantum Monte Carlo simulations. By investigating the q-dependence of the…

强关联电子 · 物理学 2009-11-11 Takuma Ohashi , Sei-ichiro Suga , Norio Kawakami , Hirokazu Tsunetsugu

We perform large scale projector determinant quantum Monte-Carlo simulations to study the insulating states of the half-filled SU(6) Hubbard model on the square lattice. The transition from the antiferromagnetic state to the valence bond…

强关联电子 · 物理学 2019-09-30 Da Wang , Lei Wang , Congjun Wu

We calculate the one-particle density of states for the Mott-Hubbard insulating phase of the Hubbard model on a Bethe lattice in the limit of infinite coordination number. We employ the Kato-Takahashi perturbation theory around the…

强关联电子 · 物理学 2007-05-23 Eva Kalinowski , Florian Gebhard