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Monolayer transition metal dichalcogenides are promising materials for valleytronic operations. They exhibit two inequivalent valleys in the Brillouin zone, and the valley populations can be directly controlled and determined using…

介观与纳米尺度物理 · 物理学 2017-09-29 Kathleen M. McCreary , Marc Currie , Aubrey T. Hanbicki , Hsun-Jen Chuang , Berend T. Jonker

Optical and electrical properties of two-dimensional transition metal dichalcogenides (TMDCs) grown by chemical vapor deposition (CVD) are strongly determined by their microstructure. Consequently, the visualization of spatial structural…

To date, a number of valley materials have been discovered with the spin-valley or valley-layer couplings. It is highly desirable to realize the interplay of more electronic degrees of freedom in a valley material. Based on the…

材料科学 · 物理学 2023-05-24 Xiaohui Wang , Li Liang , Xiao Li

Single-layer transition metal dichalcogenides (TMDs) provide a promising material system to explore the electron's valley degree of freedom as a quantum information carrier. The valley degree of freedom in single-layer TMDs can be directly…

介观与纳米尺度物理 · 物理学 2019-10-09 Yanhao Tang , Kin Fai Mak , Jie Shan

Two-dimensional transition metal dichalcogenides show great potential as promising thermoelectric materials due to their lower dimensionality, the unique density of states and quantum confinement of carriers. The effect of mechanical strain…

计算物理 · 物理学 2019-05-28 Jayanta Bera , Satyajit Sahu

Transition metal dichalcogenides (TMDs) are layered materials that have a semiconducting phase with many advantageous optoelectronic properties, including tightly bound excitons and spin-valley locking. In Tungsten-based TMDs, spin and…

介观与纳米尺度物理 · 物理学 2022-04-27 Saroj B. Chand , John M. Woods , Enrique Mejia , Takashi Taniguchi , Kenji Watanabe , Gabriele Grosso

For monolayer transition metal chalcogenides (TMDs), electrons and excitons in different valleys can be driven to opposite directions by the Berry curvature, serving as a valley-dependent effective magnetic field. In addition to monolayer…

介观与纳米尺度物理 · 物理学 2019-04-23 Zumeng Huang , Yuanda Liu , Kévin Dini , Zhuojun Liu , Hanlin Fang , Jin Liu , Timothy Liew , Weibo Gao

The valley degree of freedom of electrons in two-dimensional transition metal dichalcogenides has been extensively studied by theory, optical and optoelectronic experiments. However, generation and detection of pure valley current without…

介观与纳米尺度物理 · 物理学 2019-04-23 Terry Y. T. Hung , Kerem Y. Camsari , Shengjiao Zhang , Pramey Upadhyaya , Zhihong Chen

The robust spin and momentum valley locking of electrons in two-dimensional semiconductors make the valley degree of freedom of great utility for functional optoelectronic devices. Owing to the difference in optical selection rules for the…

Charge carriers in two-dimensional transition metal dichalcogenides (TMDs), such as WSe$_2$, have their spin and valley-pseudospin locked into an optically-addressable index that is proposed as a basis for future information processing. The…

介观与纳米尺度物理 · 物理学 2021-03-17 Weijie Li , Xin Lu , Jiatian Wu , Ajit Srivastava

Transition metal dichalcogenides (TMDs) constitute a versatile platform for atomically thin optoelectronics devices and spin-valley memory applications. In monolayers optical absorption is strong, but the transition energy is not tunable as…

Monolayer (ML) transition metal dichalcogenides (TMDs) have been attracting great research attentions lately for their extraordinary properties, in particular the exotic spin-valley coupled electronic structures that promise future…

Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the…

Potential applications of monolayer of transition metal dichalcogenides (TMDs) in optoelectronic and flexible devices are under heavy investigation. Although TMDs monolayers are highly robust to external mechanical fields, their electronic…

计算物理 · 物理学 2021-09-14 Mohammad Bahmani , Michael Lorke , Mahdi Faghihnasiri , Thomas Frauenheim

Monolayer transition metal dichalcogenides have attracted great attentions for potential applications in valleytronics. However, the valley polarization degree is usually not high because of the intervalley scattering. Here, we demonstrate…

材料科学 · 物理学 2023-02-23 Jianchen Dang , Mingwei Yang , Xin Xie , Zhen Yang , Danjie Dai , Zhanchun Zuo , Can Wang , Kuijuan Jin , Xiulai Xu

Two-dimensional semiconducting transition metal dichalcogenides (TMDs) are promising for optoelectronic applications due to their strongly bound excitons. While bright excitons have been thoroughly scrutinized, dark excitons are much less…

Altermagnets (AM) are a recently discovered third class of collinear magnets, and have been attracting significant interest in the field of condensed matter physics. Here, based on first-principles calculations and theoretical analysis, we…

材料科学 · 物理学 2024-12-02 Jin-Yang Li , An-Dong Fan , Yong-Kun Wang , Ying Zhang , Si Li

Transition metal dichalcogenide (TMD) monolayers are two-dimensional semiconductors with two valleys in their band structure that can be selectively addressed using circularly polarized light. Their photoluminescence spectrum is…

介观与纳米尺度物理 · 物理学 2020-10-26 Joris J. Carmiggelt , Michael Borst , Toeno van der Sar

Local strain engineering is an exciting approach to tune the optoelectronic properties of materials. Two dimensional (2D) materials such as 2D transition metal dichalcogenides (TMDs) are particularly well suited for this purpose because…

光学 · 物理学 2020-02-11 Ahmed Raza Khan , Teng Lu , Wendi Ma , Yuerui Lu , Yun Liu

The valley degree of freedom is one of the most intriguing properties of atomically thin transition metal dichalcogenides. Together with the possibility to address this degree of freedom by valley-contrasting optical selection rules, it has…