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相关论文: Phase separation in doped Mott insulators

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Doping the distorted-perovskite Mott insulators LaTiO$_3$ and GdTiO$_3$ with a single SrO layer along the [001] direction gives rise to a rich correlated electronic structure. A realistic superlattice study by means of the charge…

材料科学 · 物理学 2015-05-08 Frank Lechermann , Michael Obermeyer

Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide, we derive simple conditions for the conductance of the dot to become a step-like function of the number of doping atoms inside the dot, with…

介观与纳米尺度物理 · 物理学 2007-05-23 S. V. Vyshenski , U. Zeitler , R. J. Haug

The electronic properties of Mott insulators realized in (111) bilayers of perovskite transition-metal oxides are studied. The low-energy effective Hamiltonians for such Mott insulators are derived in the presence of a strong spin-orbit…

强关联电子 · 物理学 2015-06-11 Satoshi Okamoto

We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator…

强关联电子 · 物理学 2017-01-13 Yoshiaki Sato , Yoshitaka Kawasugi , Masayuki Suda , Hiroshi M. Yamamoto , Reizo Kato

Spin-state transitions, observed in many transition metal compounds containing Co$^{3+}$ and Fe$^{2+}$, may occur with the change of temperature, pressure, but also with doping, in which case the competition of single-site effects and…

强关联电子 · 物理学 2009-07-24 A. O. Sboychakov , K. I. Kugel , A. L. Rakhmanov , D. I. Khomskii

Layered organic superconductors of the BEDT family are model systems for the interplay of the Mott transition with superconductivity, magnetic order and frustration. Recent experimental studies on a hole-doped version of BEDT compounds…

超导电性 · 物理学 2015-09-24 Charles-David Hébert , Patrick Sémon , A. -M. S. Tremblay

We address the problem of the percolative phase separation in polycrystalline samples of Pr$_{0.5-\delta}$Ca$_{0.2+\delta}$Sr$_{0.3}$MnO$_3$ for $-0.04\leq \delta \leq 0.04$ (hole doping $n$ between 0.46 and 0.54). We perform measurements…

强关联电子 · 物理学 2009-11-07 Dario G. Niebieskikwiat , Rodolfo D. Sanchez , Liliana Morales , Boris Maiorov

The dimer Mott insulator $\kappa$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$ can be tuned into a metallic and superconducting state upon applying pressure of 1.5 kbar and more. We have performed dielectric spectroscopy measurements (7 kHz to 5 MHz) on…

A general quantitative measure of the tendency towards phase separation is introduced for systems exhibiting phase transitions or crossovers controlled by charge carrier concentration. This measure is devised for the situations when the…

强关联电子 · 物理学 2011-05-02 Boris V. Fine , Takeshi Egami

We derive the phase diagram for the one-dimensional model of a ferroelectric perovskite recently introduced by Egami, Ishihara and Tachiki [Science, {\bf 261}, 1307 (1993)]. We show that the interplay between covalency, ionicity and strong…

强关联电子 · 物理学 2009-10-31 Michele Fabrizio , Alexander O. Gogolin , Alexander A. Nersesyan

Metal insulator transitions driven by local Coulomb interactions are among the most fascinating phenomena in condensed matter physics. They occur in a large variety of transition metal compounds. Most of these strongly correlated materials…

强关联电子 · 物理学 2007-05-23 A. Liebsch

The effect of proximity to a Mott insulating phase on the charge transport properties of a superconductor is determined. An action describing the low energy physics is formulated and different scenarios for the approach to the Mott phase…

强关联电子 · 物理学 2009-11-07 L. B. Ioffe , A. J. Millis

We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others…

强关联电子 · 物理学 2016-01-12 Yilin Wang , Li Huang , Liang Du , Xi Dai

4Hb-TaS2 has been proposed to possess unconventional superconductivity with broken time reveral symmetry due to distinctive layered structure, featuring a heterojunction between a 2D triangular Mott insulator and a charge density wave…

强关联电子 · 物理学 2024-06-18 Junho Bang , Byeongin Lee , Hyungryul Yang , Sunghun Kim , Dirk Wulferding , Doohee Cho

Motivated by the direct observation of electronic phase separation in first-order Mott transitions, we model the interface between the thermodynamically coexisting metal and Mott insulator. We show how to model the required slab geometry…

强关联电子 · 物理学 2017-05-24 Juho Lee , Chuck-Hou Yee

The gas-liquid transition is a first-order transition terminating at a finite-temperature critical point with diverging density fluctuations. Mott transition, a metal-insulator transition driven by Coulomb repulsion between electrons, has…

超导电性 · 物理学 2007-05-23 Masatoshi Imada

Mott insulators can be portrayed as "unsuccessful metals": systems in which a strong Coulomb repulsion prevents charge conduction notwithstanding the metal-like density of conduction electrons. The possibility to unlock such large density…

强关联电子 · 物理学 2016-10-24 G. Mazza , A. Amaricci , M. Capone , M. Fabrizio

We obtain the quantum phase diagram of the Hubbard chain with alternating on-site energy at half filling. The model is relevant for the ferroelectric perovskites and organic mixed-stack donor-acceptor crystals. For any values of the…

强关联电子 · 物理学 2009-11-07 M. E. Torio , A. A. Aligia , H. A. Ceccatto

The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the…

V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a…