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相关论文: Phase separation in doped Mott insulators

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The Mott insulating phase of the parent compounds is frequently taken as starting point for the underdoped high-$T_c$ cuprate superconductors. In particular, the pseudogap state is often considered as deriving from the Mott insulator. In…

强关联电子 · 物理学 2020-07-21 Wei Wu , Mathias S. Scheurer , Michel Ferrero , Antoine Georges

Results are presented of single crystal structural, thermodynamic, and reflectivity measurements of the double-perovskite Ba2NaOsO6. These characterize the material as a 5d^1 ferromagnetic Mott insulator with an ordered moment of ~0.2 Bohr…

强关联电子 · 物理学 2009-11-11 A. S. Erickson , S. Misra , G. J. Miller , R. R. Gupta , Z. Schlesinger , W. A. Harrison , J. M. Kim , I. R. Fisher

A two-dimensional system of atoms in an anisotropic optical lattice is studied theoretically. If the system is finite in one direction, it is shown to exhibit a transition between a two-dimensional superfluid and a one-dimensional Mott…

其他凝聚态物理 · 物理学 2009-11-13 Sara Bergkvist , Robert Saers , Emil Lundh , Anders Rosengren , Magnus Rehn , Anders Kastberg

We study the breakdown of a Mott insulator with the thermodynamic imbalance induced by an applied bias voltage. By analyzing the instabilities of the magnetic susceptibility, we describe a rich non-equilibrium phase diagram, obtained for…

强关联电子 · 物理学 2016-05-04 Pedro Ribeiro , Andrey E. Antipov , Alexey N. Rubtsov

The first indication of a pseudogap in cuprates came from a sudden decrease of NMR Knight shift at a doping-dependent temperature $T^*(\delta)$. Since then, experiments have found phase transitions at a lower $T^*_\text{phase}(\delta)$.…

强关联电子 · 物理学 2019-09-24 A. Reymbaut , S. Bergeron , R. Garioud , M. Thénault , M. Charlebois , P. Sémon , A. -M. S. Tremblay

The transition voltage of an abrupt metal-insulator transition (MIT), observed by applying an electric field to two-terminal devices fabricated on a Mott insulator VO_2 film, decreases with increasing temperature up to 334K. The abrupt…

强关联电子 · 物理学 2007-05-23 Hyun-Tak Kim , B. G. Chae , D. H. Youn , S. L. Maeng , K. Y. Kang

A central question in the high temperature cuprate superconductors is the fate of the parent Mott insulator upon charge doping. Here we use scanning tunneling microscopy to investigate the local electronic structure of lightly doped cuprate…

超导电性 · 物理学 2017-02-21 Peng Cai , Wei Ruan , Yingying Peng , Cun Ye , Xintong Li , Zhenqi Hao , Xingjiang Zhou , Dung-Hai Lee , Yayu Wang

If a material with an odd number of electrons per unit cell turns out to be insulating, Mott localisation may be invoked as an explanation. This is widely accepted for the layered compound 1T-TaS2, which has a low-temperature insulating…

强关联电子 · 物理学 2020-06-24 C. J. Butler , M. Yoshida , T. Hanaguri , Y. Iwasa

Exact thermal studies of small (4-site, 5-site and 8-site) Hubbard clusters with local electron repulsion yield intriguing insight into phase separation, charge-spin separation, pseudogaps, condensation, in particular, pairing fluctuations…

强关联电子 · 物理学 2015-06-25 G. W. Fernando , A. N. Kocharian , K. Palandage , Tun Wang , J. W. Davenport

We study orbital Mott transition in two dimensional pyrochlore lattice, using a two orbital Hubbard model with only inter-orbital electronic hopping. We use a real space Monte Carlo based approach to study the model at finite temperature,…

强关联电子 · 物理学 2020-04-14 Abhinav Saket , Rajarshi Tiwari

The non-thermal breakdown of a Mott insulator has been a topic of great theoretical and experimental interest with technological relevance. Recent experiments have found a sharp non-equilibrium insulator-to-metal transition that is…

强关联电子 · 物理学 2024-05-16 Miguel M. Oliveira , Pedro Ribeiro , Stefan Kirchner

Twisted WSe$_2$ hosts superconductivity, metal-insulator phase transitions, and field-controllable Fermi-liquid to non-Fermi-liquid transport properties. In this work, we use dynamical mean-field theory to provide a coherent understanding…

The dissociation of excitons into holes and electrons in photoexcited semiconductors, despite being one of the first recognized examples of a Mott transition, still defies a complete understanding, especially regarding the character of the…

强关联电子 · 物理学 2019-06-07 Daniele Guerci , Massimo Capone , Michele Fabrizio

Junctions of doped Mott insulators offer a route to rectification at frequencies beyond the terahertz range. Mott insulators have strong electronic correlations and therefore short timescales for electron-electron scattering. It is this…

强关联电子 · 物理学 2013-05-28 Florian C. Sabou , Natalie Bodington , J. B. Marston

The ferroelectric polarization of perovskite oxides is much larger than implied by displacement of static ionic charges. We use an explicitly correlated scheme to investigate the phenomenon; charge transport is evaluated as a geometric…

凝聚态物理 · 物理学 2012-07-07 R. Resta , S. Sorella

Metal-insulator transitions are studied within a three-component Falicov-Kimball model which mimics a mixture of one-component and two-component fermionic particles with local repulsive interactions in optical lattices. Within the model the…

强关联电子 · 物理学 2013-08-29 Duong-Bo Nguyen , Minh-Tien Tran

We investigate the Mott transitions in two-orbital Hubbard systems. Applying the dynamical mean field theory and the self-energy functional approach, we discuss the stability of itinerant quasi-particle states in each band. It is shown that…

强关联电子 · 物理学 2009-11-11 A. Koga , K. Inaba , N. Kawakami

Photo-excited strongly correlated systems can exhibit intriguing non-thermal phases, but the theoretical investigation of them poses significant challenges. In this work, we introduce a generalized Gibbs ensemble type description for…

There exist strong experimental evidences for the dimensional cross-over from two to three dimensions as \lan compounds are overdoped. In this paper we describe the dimensional cross-over of the layered correlated metal in the gauge theory…

凝聚态物理 · 物理学 2009-10-28 H. C. Lee , P. B. Wiegmann

Dynamical mean field theory calculations are used to show that for late transition-metal-oxides a critical variable for the Mott/charge-transfer transition is the number of d-electrons, which is determined by charge transfer from oxygen…

强关联电子 · 物理学 2012-11-27 Xin Wang , M. J. Han , Luca de' Medici , Hyowon Park , C. A. Marianetti , Andrew J. Millis
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