相关论文: Write-Once-Memory Codes by Source Polarization
A coding scheme for write once memory (WOM) using polar codes is presented. It is shown that the scheme achieves the capacity region of noiseless WOMs when an arbitrary number of multiple writes is permitted. The encoding and decoding…
A write-once memory (wom) is a storage medium formed by a number of ``write-once'' bit positions (wits), where each wit initially is in a `0' state and can be changed to a `1' state irreversibly. Examples of write-once memories include SLC…
Write-Once-Memory (WOM) is a model for many modern non-volatile memories, such as flash memories. Recently, several capacity-achieving WOM coding schemes have been proposed based on polar coding. Due to the fact that practical computer…
This paper investigates the design and application of write-once memory (WOM) codes for flash memory storage. Using ideas from Merkx ('84), we present a construction of WOM codes based on finite Euclidean geometries over $\mathbb{F}_2$.…
In this paper, we propose a construction of non-binary WOM (Write-Once-Memory) codes for WOM storages such as flash memories. The WOM codes discussed in this paper are fixed rate WOM codes where messages in a fixed alphabet of size $M$ can…
This paper constructs WOM codes that combine rewriting and error correction for mitigating the reliability and the endurance problems in flash memory. We consider a rewriting model that is of practical interest to flash applications where…
In this paper we give several new constructions of WOM codes. The novelty in our constructions is the use of the so called Wozencraft ensemble of linear codes. Specifically, we obtain the following results. We give an explicit construction…
In the framework of write-once memory (WOM) codes, it is important to distinguish between codes that can be decoded directly and those that require that the decoder knows the current generation to successfully decode the state of the…
The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer…
A method is proposed, called channel polarization, to construct code sequences that achieve the symmetric capacity $I(W)$ of any given binary-input discrete memoryless channel (B-DMC) $W$. The symmetric capacity is the highest rate…
Flash memory is a write-once medium in which reprogramming cells requires first erasing the block that contains them. The lifetime of the flash is a function of the number of block erasures and can be as small as several thousands. To…
Phase Change Memory (PCM) has rapidly progressed and surpassed Dynamic Random-Access Memory (DRAM) in terms of scalability and standby energy efficiency. Altering a PCM cell's state during writes demands substantial energy, posing a…
We propose efficient coding schemes for two communication settings: 1. asymmetric channels, and 2. channels with an informed encoder. These settings are important in non-volatile memories, as well as optical and broadcast communication. The…
A capacity-achieving scheme based on polar codes is proposed for reliable communication over multi-channels which can be directly applied to bit-interleaved coded modulation schemes. We start by reviewing the ground-breaking work of polar…
We introduce the design of a set of code sequences $ \{ {\mathscr C}_{n}^{(m)} : n\geq 1, m \geq 1 \}$, with memory order $m$ and code-length $N=O(\phi^n)$, where $ \phi \in (1,2]$ is the largest real root of the polynomial equation…
We construct a channel coding scheme to achieve the capacity of any discrete memoryless channel based solely on the techniques of polar coding. In particular, we show how source polarization and randomness extraction via polarization can be…
In recent years, due to the spread of multi-level non-volatile memories (NVM), $q$-ary write-once memories (WOM) codes have been extensively studied. By using WOM codes, it is possible to rewrite NVMs $t$ times before erasing the cells. The…
\emph{Resistive memories}, such as \emph{phase change memories} and \emph{resistive random access memories} have attracted significant attention in recent years due to their better scalability, speed, rewritability, and yet non-volatility.…
The probabilistic shaping scheme from Honda and Yamamoto (2013) for polar codes is used to enable power-efficient signaling for on-off keying (OOK). As OOK has a non-symmetric optimal input distribution, shaping approaches that are based on…
Many performance critical systems today must rely on performance enhancements, such as multi-port memories, to keep up with the increasing demand of memory-access capacity. However, the large area footprints and complexity of existing…