相关论文: Temperature Dependent Valley Relaxation Dynamics i…
The influence of temperature and transport conditions on the electron spin relaxation in lightly doped n-type GaAs semiconductors is investigated. A Monte Carlo approach is used to simulate electron transport, including the evolution of…
Understanding the effect of vibrations on the relaxation process of individual spins is crucial for implementing nano systems for quantum information and quantum metrology applications. In this work, we present a theoretical microscopic…
We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device…
Electrodynamics of single-layer graphene is studied in the scaling regime. At any finite temperature, there is a weakly damped collective thermo-plasma polariton mode whose dispersion and wavelength dependent damping is determined…
The coupled spin and valley degrees of freedom in transition metal dichalcogenides (TMDs) are considered a promising platform for information processing. Here, we use a TMD heterostructure ${\text{MoS}_{2}-\text{MoSe}_{2}}$ to study optical…
We present a mean-field theory of a coarse-grained model of a super-cooled liquid in which relaxation occurs via local plastic rearrangements. Local relaxation can be induced by thermal fluctuations or by the long-range elastic consequences…
Using approximate partition functions and a master equation approach, we investigate the statistical relaxation toward equilibrium in selected CaAr$_n$ clusters. The Gaussian theory of absorption (previous article) is employed to calculate…
We develop a valley-dependent envelope function theory that can describe the effects of arbitrary configurations of interface steps and miscuts on the qubit relaxation time. For a given interface roughness, we show how our theory can be…
Although single-layer transition-metal dichalcogenides with novel valley functionalities are promising candidate to realize valleytronic devices, the essential understanding of valley depolarization mechanisms is still incomplete. Based on…
Transition metal dichalcogenides (TMDs) have valley degree of freedom, which features optical selection rule and spin-valley locking, making them promising for valleytronics devices and quantum computation. For either application, a long…
We investigate the valley coherence in high and low-quality monolayer MoSe2 by polarization-resolved photoluminescence spectroscopy. The observed valley coherence is on the order of 10 % regardless of the sample quality, proving that the…
To establish a correlation between the spin diffusion, the spin lifetime, and the electron density, we study, employing time-resolved magneto-optical Kerr effect microscopy, the spin polarization evolution in low-dimensional GaAs…
We investigate the optical excitation spectra and the photoluminescence depolarization dynamics in bilayer WS$_2$. A different understanding of the optical excitation spectra in the recent photoluminescence experimentby Zhu {\em et al.}…
The energy dependence of the relaxation rate of hot electrons due to interaction with the Fermi sea is studied. We consider 2D and 3D systems, quasi-1D quantum wires with multiple transverse bands, as well as single-channel 1D wires. Our…
We study the interaction of the relaxation processes with the density fluctuations by molecular dynamics simulation of a flexible molecule model for o-terphenyl (oTP) in the liquid and supercooled phases. We find evidence, besides the…
Terahertz photoconductivity of $100~\mu$m and $20~\mu$m Hall bars fabricated from narrow AlAs quantum wells (QWs) of different widths is investigated in this paper. The photoresponse is dominated by collective magnetoplasmon excitations…
We develop a theory of effects of electron-electron collisions on the Dyakonov-Perel' spin relaxation in multi-valley quantum wells. It is shown that the electron-electron scattering rate which governs the spin relaxation is different from…
Based on a Dirac-like Hamiltonian and coherent scattering formalism, we study spin-valley transport and Goos-H\"{a}nchen like (GHL) effect of transmitted and reflected electrons in a gated monolayer WS$_2$. Our results show that the lateral…
Because the valleys in the band structure of graphene are related by time-reversal symmetry, electrons from one valley are reflected as holes from the other valley at the junction with a superconductor. We show how this Andreev reflection…
We report on the influence of a photochemical doping method on the spin-valley polarization degree ($P_{c}$) of excitons in WSe$_2$ monolayers. By varying the carrier density and transitioning from an excess of electrons (n-type) to an…