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相关论文: Temperature Dependent Valley Relaxation Dynamics i…

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We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlGaAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques…

介观与纳米尺度物理 · 物理学 2015-06-25 W. J. H. Leyland , G. H. John , R. T. Harley , M. M. Glazov , E. L. Ivchenko , D. A. Ritchie , A. J. Shields , M. Henini

Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to…

材料科学 · 物理学 2017-01-04 Wen-Yi Tong , Shi-Jing Gong , Xiangang Wan , Chun-Gang Duan

Quasi-two dimensional electron systems exhibit peculiar transport effects depending on their density profiles and temperature. A usual two dimensional electron system is assumed to have a $\delta$ like density distribution along the crystal…

介观与纳米尺度物理 · 物理学 2014-10-24 G. Oylumluoglu , S. Mirioglu , S. Aksu , U. Erkaslan , A. Siddiki

We have investigated the valley degeneracy of MoS2 multilayers and its effect on thermoelectric properties. By modulating the layer thickness and external electric field, the hole valleys at {\Gamma} and K points in the highest energy…

材料科学 · 物理学 2016-02-03 Jisook Hong , Changhoon Lee , Jin-Seong Park , Ji Hoon Shim

We present a theory for spin relaxation of electrons due to scattering off the central-cell potential of impurities in silicon. Taking into account the multivalley nature of the conduction band and the violation of translation symmetry, the…

材料科学 · 物理学 2014-10-14 Yang Song , Oleg Chalaev , Hanan Dery

We show that the electric field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from…

材料科学 · 物理学 2012-04-10 Jing Li , Lan Qing , Hanan Dery , Ian Appelbaum

We show that excitons and free carriers in K and K' valleys of transition metal dichalcogenide monolayers can be entangled with respect to their valley degree of freedom by absorbing linearly polarized single photons. This effect does not…

介观与纳米尺度物理 · 物理学 2015-08-12 Mikhail Tokman , Yongrui Wang , Alexey Belyanin

Time integrated spectroscopic measurements are carried out to characterize transient plasma stream produced in a coaxial pulsed plasma accelerator. This method allows the estimation of different plasma parameters and its evolution with…

等离子体物理 · 物理学 2020-08-04 A. Ahmed , S. Singha , S. Borthakur , N. K. Neog , T. K. Borthakur , J. Ghosh

Due to degeneracies arising from crystal symmetries, it is possible for electron states at band edges ("valleys") to have additional spin-like quantum numbers. An important question is whether coherent manipulation can be performed on such…

Manipulation of intrinsic electron degrees of freedom, such as charge and spin, gives rise to electronics and spintronics, respectively. Electrons in monolayer materials with a honeycomb lattice structure, such as the Transition-Metal…

强关联电子 · 物理学 2018-11-27 E. C. Marino , Leandro O. Nascimento , Van Sérgio Alves , N. Menezes , C. Morais Smith

Dielectric relaxation spectroscopy (1 Hz - 20 GHz) has been performed on supercooled glass-formers from the temperature of glass transition (T_g) up to that of melting. Precise measurements particularly in the frequencies of MHz-order have…

无序系统与神经网络 · 物理学 2009-11-07 Takuya Fujima , Hiroshi Frusawa , Kohzo Ito

Reliable optical control of valley degrees of freedom in moir\'e excitons requires that the emitted polarization faithfully reflect the underlying valley state. Here, we show that linearly polarized photoluminescence from WSe2/WS2 moir\'e…

The relaxation rate of a Maxwellian velocity distribution function that has an initially anisotropic temperature $(T_\parallel \neq T_\perp)$ is an important physical process in space and laboratory plasmas. It is also a canonical example…

等离子体物理 · 物理学 2017-06-07 Scott D. Baalrud , Jerome Daligault

Optical orientation of localized/bound excitons is shown to be effectively enhanced by the application of magnetic fields as low as 20 mT in monolayer WS$_2$. At low temperatures, the evolution of the polarization degree of different…

The spin degree of freedom in solids offers opportunities beyond charge-based electronics and is actively investigated for both spintronics and quantum computation. However, the interplay of these spins with their native environment can…

介观与纳米尺度物理 · 物理学 2011-10-04 D. Kölbl , D. M. Zumbühl , A. Fuhrer , G. Salis , S. F. Alvarado

A direct band gap, remarkable light-matter coupling as well as strong spin-orbit and Coulomb interaction establish two-dimensional (2D) crystals of transition metal dichalcogenides (TMDs) as an emerging material class for fundamental…

Coherent optical dressing of quantum materials offers technological advantages to control their electronic properties, such as the electronic valley degree of freedom in monolayer transition metal dichalcogenides (TMDs). Here, we observe a…

介观与纳米尺度物理 · 物理学 2017-03-14 Edbert J. Sie , Chun Hung Lui , Yi-Hsien Lee , Jing Kong , Nuh Gedik

A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin…

材料科学 · 物理学 2010-01-05 J. L. Cheng , M. W. Wu , J. Fabian

Optical orientation experiments have been performed in GaAs epilayers with photoexcitation energies in the 3 eV region yielding the photogeneration of spin-polarized electrons in the satellite L valley. We demonstrate that a significant…

介观与纳米尺度物理 · 物理学 2015-06-05 T. Zhang , P. Barate , C. T. Nguyen , A. Balocchi , T. Amand , P. Renucci , H. Carrere , B. Urbaszek , X. Marie

We present a precise microscopic description of the limiting step for low temperature shape relaxation of two dimensional islands in which activated diffusion of particles along the boundary is the only mechanism of transport allowed. In…

材料科学 · 物理学 2009-10-31 Nicolas Combe , Hernán Larralde