相关论文: Intrinsic Mobility Limiting Mechanisms in Lanthanu…
Cubic perovskite oxides are emerging high-mobility transparent conducting oxides (TCOs), but Ge-based TCOs had not been known until the discovery of metastable cubic SrGeO$_3$. $0.5 \times 0.4 \times 0.2$-mm$^3$ large single crystals of the…
We report on electric-field and temperature dependent transport measurements in exfoliated thin crystals of Bi$_{2}$Se$_{3}$ topological insulator. At low temperatures ($< 50$ K) and when the chemical potential lies inside the bulk gap, the…
Accurately predicting carrier mobility in strongly anharmonic solids necessitates a precise characterization of lattice dyndamics as a function of temperature. We achieve consistency with experimental electron mobility data for bulk…
We measure the temperature-dependent carrier density and resistivity of the topological surface state of thin exfoliated Bi2Se3 in the absence of bulk conduction. When the gate-tuned chemical potential is near or below the Dirac point the…
Results of in-plane and out-of-plane thermal conductivity measurements on $\rm La_{1.8-x}Eu_{0.2}Sr_xCuO_4$ ($0\leq x\leq0.2$) single crystals are presented. The most characteristic features of the temperature dependence are a pronounced…
Electrodynamic properties of La-doped SrTiO3 thin films with controlled elemental vacancies have been investigated using optical spectroscopy and thermopower measurement. In particular, we observed a correlation between the polaron…
Photogenerated carrier transport and recombination in metal halide perovskites are critical to device performance. Despite considerable efforts, sample quality issues and measurement techniques have limited the access to their intrinsic…
We report an investigation of perovskite-type LaNiO3 thin films by Raman scattering in both various scattering configurations and as a function of temperature. The room-temperature Raman spectra and the associated phonon mode assignment…
Epitaxial SrTi1-xVxO3 thin films with thicknesses of ~16 nm were grown on (001)-oriented LSAT substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT)…
Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films in low…
We present a study of thermal conductivity, $\kappa$, in undoped and doped strontium titanate in a wide temperature range (2-400 K) and detecting different regimes of heat flow. In undoped SrTiO$_{3}$, $\kappa$ evolves faster than cubic…
We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001)…
Transparent and conductive ZnO:Ga thin films are prepared by laser molecular-beam epitaxy. Their electron properties were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were…
4d transition metal perovskite oxides serve as suitable testbeds for the study of strongly correlated metallic properties. Among these, $SrMoO_{3}$ (SMO) exhibits remarkable electrical conductivity at room temperature. The…
We theoretically study the acoustic phonon limited mobility in n-doped two-dimensional MoS2 for temperatures T < 100 K and high carrier densities using the Boltzmann equation and first-principles calculations of the acoustic electron-phonon…
We present a theoretical study of electron-phonon scattering effects in thin films made of a strong topological insulator. Phonons are modelled by isotropic elastic continuum theory with stress-free boundary conditions, and the interaction…
Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with…
We have measured the heat conduction between 0.05 K and 1.0 K of high purity silicon wafers carrying on their polished faces a variety of thin dielectric films and polycrystalline thin metallic films. Using a Monte Carlo simulation to…
SrTiO$_3$ has been extensively investigated owing to its abundant degrees of freedom for modulation. However, the microscopic mechanism of thermal transport especially the relationship between phonon scattering and lattice distortion during…
The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature $T \gtrsim 10\,\,$K, and the resistivity increases…