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相关论文: Graphene on boron-nitride: Moir\'e pattern in the …

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Van der Waals heterostructures comprise a new class of artificial materials formed by stacking atomically-thin planar crystals. Here, we demonstrate band structure engineering of a van der Waals heterostructure composed of a monolayer…

介观与纳米尺度物理 · 物理学 2013-05-22 B. Hunt , J. D. Sanchez-Yamagishi , A. F. Young , K. Watanabe , T. Taniguchi , P. Moon , M. Koshino , P. Jarillo-Herrero , R. C. Ashoori

Interfaces play a key role in low dimensional materials like graphene or its boron nitrogen analog, white graphene. The edge energy of h-BN has not been reported as its lower symmetry makes it difficult to separate the opposite B-rich and…

材料科学 · 物理学 2011-07-19 Yuanyue Liu , Somnath Bhowmick , Boris I. Yakobson

Graphene and boron nitride (GPBN) heterostructures provide a viable way to realize tunable bandgap, promising new opportunities in graphene-based nanoelectronic and optoelectronic devices. In the present study, we investigated the interplay…

材料科学 · 物理学 2015-03-10 Bin Ouyang , Fanchao Meng , Jun Song

Hexagonal boron nitride (h-BN) and graphite are structurally similar but with very different properties. Their combination in graphene-based devices meets now a huge research focus, and it becomes particularly important to evaluate the role…

Graphene flakes placed on hexagonal boron nitride feature in the presence of a magnetic field a complex electronic structure due to a hexagonal moir\'e potential resulting from the van der Waals interaction with the substrate. The slight…

介观与纳米尺度物理 · 物理学 2014-12-11 L. A. Chizhova , F. Libisch , J. Burgdörfer

The interaction between a graphene layer and a hexagonal Boron Nitride (hBN) substrate induces lateral displacements and strains in the graphene layer. The displacements lead to the appearance of commensurate regions and the existence of an…

介观与纳米尺度物理 · 物理学 2014-09-05 Pablo San-Jose , Ángel Gutiérrez , Mauricio Sturla , Francisco Guinea

In this study, we investigate the weak localization (WL) and weak antilocalization (WAL) effects in twisted bilayer graphene positioned on a hexagonal boron nitride substrate. The bottom graphene layer aligns with the hexagonal boron…

介观与纳米尺度物理 · 物理学 2023-07-12 Hongyi Yan , Haiwen Liu

Recently, the in-plane thermal transport in van der Waals (vdW) materials such as graphene, hexagonal boron nitride (h-BN), and transition metal dichalcogenides (TMDs) has been widely studied. Whereas, the cross-plane one is far from…

材料科学 · 物理学 2023-07-11 S. G. Wang , H. F. Feng , Zhi-Xin Guo

The DFT/vdW-QHO-WF method, recently developed to include the van der Waals (vdW) interactions in approximated Density Functional Theory (DFT) by combining the Quantum Harmonic Oscillator model with the Maximally Localized Wannier Function…

材料科学 · 物理学 2015-06-18 Pier Luigi Silvestrelli

We performed calculations of electronic, optical and transport properties of graphene on hBN with realistic moir\'e patterns. The latter are produced by structural relaxation using a fully atomistic model. This relaxation turns out to be…

介观与纳米尺度物理 · 物理学 2015-11-05 G. J. Slotman , M. M. van Wijk , Pei-Liang Zhao , A. Fasolino , M. I. Katsnelson , Shengjun Yuan

We consider the role of deformations in graphene heterostructures with hexagonal crystals (including strain, wrinkles and dislocations) on the geometrical properties of moire patterns characteristic for a pair of two incommensurate…

介观与纳米尺度物理 · 物理学 2014-10-27 Diana A. Cosma , John R. Wallbank , Vadim Cheianov , Vladimir I. Fal'ko

With the use of density functional theory calculations and addition of van der Waals correction, the graphene/HfS$_2$ heterojunction is constructed, and its electronic properties are examined thoroughly. This interface is determined as…

材料科学 · 物理学 2020-11-10 S. Karbasizadeh , F. Fanaeiparvar , I. Abdolhosseini Sarsari

Recently hybridized monolayers consisting of hexagonal boron nitride (h-BN) phases inside graphene layer have been synthesized and shown to be an effective way of opening band gap in graphene monolayers [1]. In this letter, we report an ab…

材料科学 · 物理学 2012-04-27 Qing Peng , Amir R. Zamiri , Wei Ji , Suvranu De

As mechanical structures enter the nanoscale regime, the influence of van der Waals forces increases. Graphene is attractive for nanomechanical systems because its Young's modulus and strength are both intrinsically high, but the mechanical…

介观与纳米尺度物理 · 物理学 2015-05-28 Steven P. Koenig , Narasimha G. Boddeti , Martin L. Dunn , J. Scott Bunch

Hexagonal boron nitride (hBN) regains interest as a strategic component in graphene engineering and in van der Waals heterostructures built with two dimensional materials. It is crucial then, to handle reliable characterization techniques…

材料科学 · 物理学 2016-10-24 Leonard Schue , Ingrid Stenger , Frederic Fossard , Annick Loiseau , Julien Barjon

The possibility of modification of the local properties of hexagonal boron nitride (h-BN) by laser irradiation is investigated. Investigations conducted using both Raman spectroscopy and electrostatic force microscopy were performed. Laser…

Interlayer electron transport through a graphene / hexagonal boron-nitride (h-BN) / graphene heterostructure is strongly affected by the misorientation angle $\theta$ of the h-BN with respect to the graphene layers with different physical…

The spin and valley polarizations and plasmonics in Van der Waals heterostructures of strained graphene monolayer on 2D transition metal dichalcogenide (GrTMD) substrate are reported in this communication. The substrate induced interactions…

介观与纳米尺度物理 · 物理学 2017-09-05 Partha Goswami

Graphene-covered copper surfaces have been exposed to borazine, (BH)3(NH)3, with the resulting surfaces characterized by low-energy electron microscopy. Although the intent of the experiment was to form hexagonal boron nitride (h-BN) on top…

Control over the optical properties of atomically thin two-dimensional (2D) layers, including those of transition metal dichalcogenides (TMDs), is needed for future optoelectronic applications. Remarkable advances have been achieved through…