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相关论文: Graphene on boron-nitride: Moir\'e pattern in the …

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Monolayer lateral heterostructure of graphene and hexagonal boron nitride (h-BNC) has attracted a growing attention mainly due to its tunable band-gap character and unique physical properties at interface. Hereby, we reported the first-time…

We have studied the interaction of water and graphene doped with nitrogen in different configurations, namely, graphitic and pyridinic nitrogen, by means of the van der Waals density functional. We found that the local nitrogen…

材料科学 · 物理学 2022-02-21 Azim Fitri Zainul Abidin , Ikutaro Hamada

We study the atomic and electronic structures of the commensurate double moir\'{e} superlattices in fully relaxed twisted bilayer graphene (TBG) nearly aligned with the hexagonal boron nitride (BN). The single-particle effective Hamiltonian…

介观与纳米尺度物理 · 物理学 2020-07-31 Xianqing Lin , Jun Ni

Wetting behaviour of surfaces is believed to be affected by van der Waals (vdW) forces, however, there is no clear demonstration of this. With the isolation of two-dimensional vdW layered materials it is possible to test this hypothesis. In…

Interfacial ferroelectricity emerges in heterostructures consisting of nonpolar van der Waals (vdW) layers, greatly expanding the scope of two dimensional ferroelectrics. In particular, the unconventional moire ferroelectricity observed in…

We show that rhombohedral four-layer graphene (4LG) nearly aligned with a hexagonal boron nitride (hBN) substrate often develops nearly flat isolated low energy bands with non-zero valley Chern numbers. The bandwidths of the isolated…

介观与纳米尺度物理 · 物理学 2023-11-28 Youngju Park , Yeonju Kim , Bheema Lingam Chittari , Jeil Jung

Graphene/MoS$_2$ van der Waals (vdW) heterostructures have promising technological applications due to their unique properties and functionalities. Many experimental and theoretical research groups across the globe have made outstanding…

材料科学 · 物理学 2018-10-17 Sobhit Singh , Camilo Espejo , Aldo H. Romero

In this article we review recent work on van der Waals (vdW) systems in which at least one of the components has strong spin-orbit coupling. We focus on a selection of vdW heterostructures to exemplify the type of interesting electronic…

介观与纳米尺度物理 · 物理学 2020-06-04 Enrico Rossi , Christopher Triola

Boron, nitrogen and carbon are neighbors in the periodic table and can form strikingly similar twin structures-hexagonal boron nitride (hBN) and graphene-yet nanofluidic experiments demonstrate drastically different water friction on them.…

We study the superlattice minibands produced by the interplay between moir\'e pattern induced by hexagonal BN substrate on graphene layer and the interlayer coupling in bilayer graphene with Bernal stacking (BLG). We compare moir\'e…

介观与纳米尺度物理 · 物理学 2013-11-20 M. Mucha-Kruczynski , J. Wallbank , V. I. Fal'ko

In this study, we highlight the potential of strain engineering in graphene/hBN (hexagonal Boron nitride) 2D heterostructures, enabling their use as wide-range light absorbers with significant implications for optoelectronic applications.…

介观与纳米尺度物理 · 物理学 2024-07-17 Priyanka Sinha , Prasanta K. Panigrahi , Bheemalingam Chittari

Hexagonal Boron Nitride substrates have been shown to dramatically improve the electric properties of graphene. Recently, it has been observed that when the two honeycomb crystals are close to perfect alignment, strong lattice distortions…

介观与纳米尺度物理 · 物理学 2014-10-08 Pablo San-Jose , Ángel Gutiérrez , Mauricio Sturla , Francisco Guinea

Boron nitride exhibits diverse crystal structures, predominantly a layered arrangement with strong intraplanar covalent bonds and weak interplanar van der Waals bonds. While commonly referred to as hexagonal BN (hBN), the sp$^2$-bonded BN…

The electronic structure of a crystalline solid is largely determined by its lattice structure. Recent advances in van der Waals solids, artificial crystals with controlled stacking of two-dimensional (2D) atomic films, have enabled the…

Van der Waal's heterostrucutures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ channel/tunnel-barrier/channel geometries. However, during…

介观与纳米尺度物理 · 物理学 2016-10-10 Amithraj Valsaraj , Leonard F. Register , Emanuel Tutuc , Sanjay K. Banerjee

We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (hbn) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This…

Atomically thin monolayers of graphene show excellent electronic properties which have led to a great deal of research on their use in nanoscale devices. However, heat management of such nanoscale devices is essential in order to improve…

We investigate van der Waals (vdW) heterostructures made of germanene, stanene or silicene with hexagonal Boron Nitride (h-BN). The intriguing topological properties of these buckled honeycomb materials can be maintained and further…

介观与纳米尺度物理 · 物理学 2018-02-06 Maoyuan Wang , Liping Liu , Cheng-Cheng Liu , Yugui Yao

The electrical evaluation of the crystallinity of hexagonal boron nitride (h-BN) is still limited to the measurement of dielectric breakdown strength, in spite of its importance as the substrate for 2-dimensional van der Waals…

材料科学 · 物理学 2018-01-29 Y. Hattori , T. Taniguchi , K. Watanabe , K. Nagashio

Van der Waals heterostructures are promising for adding new functionalities to two-dimensional materials. In this study, we focus on single photon emitters hosted in one layer and adjacent to other insulating two-dimensional material.…

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