相关论文: Systematic control of carrier concentration and re…

In the present work, ultrathin films of Zinc oxide (ZnO) and Aluminum doped zinc oxide (AZO) with 20 nm thick were fabricated at 300 K on glass and Polyethylene terephthalate (PET) substrates by means of directcurrent sputtering method. The…

Al-doped ZnO thin films were deposited using reactive high power impulse magnetron sputtering at substrate temperatures between room temperature and 600 $\bullet$ C. Two sample series with different oxygen partial pressures were studied.…

The transverse magnetoresistance of thin films of the Diluted Magnetic Semiconductor Zn$_{1-x}$Co$_{x}$O:Al on glass was studied for temperatures in the range of 5 to 100 K. Measurements were made on thin films grown by rf magnetron…

Zinc oxide is a wide-bandgap semiconductor which is considered a potential candidate for fabricating next-generation transparent spintronic devices. However, before this can be practically achieved, a thorough, scientific understanding of…

This paper reports on the deposition and photoluminescence of amorphous and crystalline thin films of zinc gallium oxide with Ga:Zn atomic ratio varied between 0.3 and 5.7. The films are prepared by reactive direct current magnetron…

The paper presents results for zinc oxide films grown at low temperature regime by Atomic Layer Deposition (ALD). We discuss electrical properties of such films and show that low temperature deposition results in oxygen-rich ZnO layers in…

Crystalline wurtzite zinc oxide (w-ZnO) can be used as a wide band gap semiconductor for light emitting devices and for transparent or high temperature electronics. The use of amorphous zinc oxide (a-ZnO) can be an advantage in these…

We systematically investigated the temperature behaviors of the electrical conductivity and Hall coefficient of two series of amorphous indium gallium zinc oxides (a-IGZO) films prepared by rf sputtering method. The two series of films are…

For a detailed study on the semiconductor to metal transition (SMT) in ZnO thin films doped with Al in the concentration range from 0.02 to 2%, we grew these films on (0001) sapphire substrates using sequential pulsed laser deposition. It…

Copper oxide thin films are deposited on quartz substrates by DC magnetron sputtering and the effect of deposition temperature on their optoelectronic properties is examined in detail. Scanning Electron Microscopy (SEM), X-ray diffraction…

This paper addresses the effect of disorder on the carrier transport mechanism of atomic layer deposited ZnO thin films as has been investigated by temperature dependent electrical resistivity measurements in the temperature range of 4.2K…

Nickel oxide (NiO) is a binary compound with a lot of applications in the present technology. NiO thin films were deposited by reactive sputtering magnetron under several voltage biases applied in the glass substrates (0, 50, 100, 200, 300,…

We report the low temperature growth of vertically aligned ZnO nanocolumns on Si substrates by using reactive radio frequency magnetron sputtering.High sputtering pressure combined with low substrate temperatures induce a pronounced self…

The present study describes a facile route of zinc oxide (ZnO) grows using the solution-dependent electrostatic spray deposition (ESD) method at temperatures ranging from 300 {\deg}C - 500 {\deg}C. In this work, zinc chloride (ZnCl2) was…

Highly oriented ZnO thin-film has been obtained at a very low pre-heating temperature, with the spin-coating sol-gel technique. The dependence of the c-axis orientation on the pre-heating temperature has been studied with experimental…

Ga2O3 thin films were deposited by reactive magnetron sputtering from a liquid gallium target. The influence of deposition temperature, substrate type, and discharge parameters on the structural and electrical properties was systematically…

The chemical deposition of high-performance Zinc Oxide (ZnO) thin films is challenging, thus significant efforts have been devoted during the past decades to develop cost-effective, scalable fabrication methods in gas phase. This work…

The structures, optical and electrical transport properties of SnO$_2$ films, fabricated by rf sputtering method at different oxygen partial pressures, were systematically investigated. It has been found that preferred growth orientation of…

The objective of this work was to study the RF sputtering process parameters optimisation for deposition of Silicon Nitride thin films. The process parameters chosen to be varied were deposition power, deposition duration, flow rate of…

Thin films of the charge-ordered (CO) compound Pr$_{0.5}$Ca$_{0.5}$MnO$_{3}$ have been deposited onto (100)-oriented SrTiO$_{3}$ substrates using the Pulsed Laser Deposition technique. Magnetization and transport properties are measured…