相关论文: Control of domain wall motion at vertically etched…
The potential experienced by transverse domain walls (TDWs) in the vicinity of asymmetric constrictions or protrusions in thin Permalloy nanowires is probed using spatially resolved magneto-optical Kerr effect measurements. Both types of…
We present the direct observation of magnetic domain motion in permalloy nanowires with notches using a wide-field Kerr microscopy technique. The domain wall motion can be modulated by the size and shape of the notch structure in the…
The propagation of domain walls in a ferromagnetic film is largely determined by domain wall pinning at defects in the material. In this letter we map the effective potential landscape for domain wall pinning in Permalloy films by raster…
The pinning and depinning of antiferromagnetic (AFM) domain wall is certainly the core issue of AFM spintronics. In this work, we study theoretically the N\'eel-type domain wall pinning and depinning at a notch in an antiferromagnetic (AFM)…
We report the results of experimental investigations of controlled domain wall (DW) pinning in a ferromagnetic nanowire (NW) by stray fields of two uniformly magnetized bistable ferromagnetic nanoparticles (NPs) placed on either side of the…
Using Lorentz transmission electron microscopy we investigate the behavior of domain walls pinned at non-topographic defects in Cr(3 nm)/Permalloy(10 nm)/Cr(5 nm) nanowires of width 500 nm. The pinning sites consist of linear defects where…
We propose a method to all-electrically control a domain-wall position in a ferromagnetic nanowire with Dzyaloshinskii-Moriya interaction. The strength of this interaction can be controlled by an external electric field, which in turn…
It is shown that a local bend of a nanowire is a source of pinning potential for a transversal head-to-head (tail-to-tail) domain wall. Eigenfrequency of the domain wall free oscillations at the pinning potential and the effective friction…
Mechanically bent nickel nanowires show clear features in their room temperature magnetoresistance when a domain wall is pinned at the location of the bend. By varying the direction of an applied magnetic field, the wire can be prepared…
According to the recent experiment by the Fert group, the velocity of domain wall motion in the spin valve ferromagnetic nanowires was almost doubly enhanced compared to the old value. In this work, we propose an additional torque model,…
Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in…
We demonstrate that for multilayered magnetic nanowires, where the thickness and composition of the individual layers has been carefully chosen, domain walls can be pinned at non-topographic sites created purely by ion irradiation in a…
Spinmotive force induced by domain wall motion in perpendicularly magnetized nanowires is numerically demonstrated. We show that using nanowires with large magnetic anisotropy can lead to a high stability of spinmotive force under strong…
In this work, we have investigated the domain wall (DW) depinning behavior in the notched nanowire by a micromagnetic simulation. A transverse domain wall (TW) was initially positioned at the center of notch and 1 ns length current pulse…
We study domain wall (DW) dynamics in permalloy nanowires excited by alternating spin-polarized current applied perpendicular to the nanowire. Spin torque ferromagnetic resonance measurements reveal that DW oscillations at a pinning site in…
We present a circuit model to describe the electron transport through a domain wall in a ferromagnetic nanowire. The domain wall is treated as a coherent 4-terminal device with incoming and outgoing channels of spin up and down and the…
We report on the controllable pinning of domain walls in stripes with perpendicular magnetic anisotropy by magnetostatic coupling to magnetic vortices in disks located above the stripe. Pinning mechanisms and depinning fields are reported.…
Use of a spin polarized current for the manipulation of magnetic domain walls in ferromagnetic nanowires has been the subject of intensive research for many years. Recently, due to technological advancements, creating nano-contacts with…
In this work we perform investigations of the competition between domain-wall pinning and attraction by anti-notches and finite device borders. The conditions for optimal geometries, which can attain a stable domain-wall pinning, are…
The precise manipulation of transverse magnetic domain walls in finite/infinite nanowires with artificial defects under the influence of very short spin-polarized current pulses is investigated. We show that for a classical $3d$ ferromagnet…