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Chern insulators are band insulators exhibiting a nonzero Hall conductance but preserving the lattice translational symmetry. We conclusively show that a partially filled Chern insulator at 1/3 filling exhibits a fractional quantum Hall…

强关联电子 · 物理学 2015-03-19 N. Regnault , B. Andrei Bernevig

We review various features of interacting Abelian topological phases of matter in two spatial dimensions, placing particular emphasis on fractional Chern insulators (FCIs) and fractional topological insulators (FTIs). We highlight aspects…

强关联电子 · 物理学 2015-11-17 Titus Neupert , Claudio Chamon , Thomas Iadecola , Luiz H. Santos , Christopher Mudry

We formulate a theory of non-Abelian fractional quantum Hall states by considering an anisotropic system consisting of coupled, interacting one dimensional wires. We show that Abelian bosonization provides a simple framework for…

介观与纳米尺度物理 · 物理学 2014-02-12 Jeffrey C. Y. Teo , C. L. Kane

Chern insulator or quantum anomalous Hall state is a topological state with integer Hall conductivity but in absence of Landau level. It had been well established on various two-dimensional lattices with periodic structure. Here, we report…

介观与纳米尺度物理 · 物理学 2020-01-08 Ai-Lei He , Lu-Rong Ding , Yuan Zhou , Yi-Fei Wang , Chang-De Gong

We predict twisted double bilayer graphene to be a versatile platform for the realization of fractional Chern insulators readily targeted by tuning the gate potential and the twist angle. Remarkably, these topologically ordered states of…

介观与纳米尺度物理 · 物理学 2021-01-18 Zhao Liu , Ahmed Abouelkomsan , Emil J. Bergholtz

Breakthrough experiments have recently realized fractional Chern insulators (FCIs) in moir\'e materials. However, all states observed are Abelian, the possible existence of more exotic non-Abelian FCIs remains controversial both…

强关联电子 · 物理学 2025-09-25 Hui Liu , Zhao Liu , Emil J. Bergholtz

We construct a three-dimensional second-order topological insulator with gapless helical hinge states from an array of weakly tunnel-coupled Rashba nanowires. For suitably chosen interwire tunnelings, we demonstrate that the system has a…

介观与纳米尺度物理 · 物理学 2023-04-18 Katharina Laubscher , Pim Keizer , Jelena Klinovaja

Finding physical realizations of topologically ordered states in experimental settings, from condensed matter to artificial quantum systems, has been the main challenge en route to utilizing their unconventional properties. We show how to…

量子物理 · 物理学 2022-11-11 Yu-Jie Liu , Kirill Shtengel , Adam Smith , Frank Pollmann

Topologically protected surface modes of classical waves hold the promise to enable a variety of applications ranging from robust transport of energy to reliable information processing networks. The integer quantum Hall effect has delivered…

介观与纳米尺度物理 · 物理学 2020-08-25 Weiyin Deng , Xueqin Huang , Jiuyang Lu , Valerio Peri , Feng Li , Sebastian D. Huber , Zhengyou Liu

We report the theoretical discovery of a systematic scheme to produce topological flat bands (TFBs) with arbitrary Chern numbers. We find that generically a multi-orbital high Chern number TFB model can be constructed by considering…

强关联电子 · 物理学 2013-01-01 Shuo Yang , Zheng-Cheng Gu , Kai Sun , S. Das Sarma

We propose searching for Chern insulators by depositing atomic layers of elements with large spin-orbit coupling (e.g., Bi) on the surface of a magnetic insulator. We argue that such systems will typically have isolated surface bands with…

材料科学 · 物理学 2013-04-16 Kevin F. Garrity , David Vanderbilt

Motivated by the outstanding challenge of realizing low-temperature states of quantum matter in synthetic materials, we propose and study an experimentally feasible protocol for preparing topological states such as Chern insulators. By…

量子气体 · 物理学 2020-01-20 S. Barbarino , J. Yu , P. Zoller , J. C. Budich

We consider a setup consisting of two coupled sheets of bilayer graphene in the regime of strong spin-orbit interaction, where electrostatic confinement is used to create an array of effective quantum wires. We show that for suitable…

介观与纳米尺度物理 · 物理学 2020-03-20 Katharina Laubscher , Daniel Loss , Jelena Klinovaja

We study two models for spinless fermions featuring topologically non-trivial bands characterized by Chern numbers $C=\pm1$ at fractional filling. Using exact diagonalization, we show that, even for infinitely strong nearest-neighbor…

强关联电子 · 物理学 2014-04-02 Stefanos Kourtis , Titus Neupert , Claudio Chamon , Christopher Mudry

Electronic topological phases of matter, characterized by robust boundary states derived from topologically nontrivial bulk states, are pivotal for next-generation electronic devices. However, understanding their complex quantum phases,…

强关联电子 · 物理学 2025-03-18 Xiang Li , Yixiao Chen , Bohao Li , Haoxiang Chen , Fengcheng Wu , Ji Chen , Weiluo Ren

Chiral-antichiral pairs of non-Abelian Hall states, like the Pfaffian, Read-Rezayi and NASS states, can be used to model two-dimensional time-reversal invariant topological insulators. Their stability was shown to be associated to the…

强关联电子 · 物理学 2015-06-22 Andrea Cappelli , Enrico Randellini

Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant computing technologies. However, it remains elusive about how…

The recent theoretical discovery of fractional Chern insulators (FCIs) has provided an important new way to realize topologically ordered states in lattice models. In earlier works, on-site and nearest neighbor Hubbard-like interactions…

强关联电子 · 物理学 2013-11-05 Zhao Liu , Emil J. Bergholtz , Eliot Kapit

The interplay between band topology and magnetism can give rise to exotic states of matter. For example, magnetically doped topological insulators can realize a Chern insulator that exhibits quantized Hall resistance at zero magnetic field.…

Motivated by the recent work of QED$_3$-Chern-Simons quantum critical points of fractional Chern insulators (Phys. Rev. X \textbf{8}, 031015, (2018)), we study its non-Abelian generalizations, namely QCD$_3$-Chern-Simons quantum phase…

强关联电子 · 物理学 2020-09-09 Ruochen Ma , Yin-Chen He