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We derive a general relation between the fine structure splitting (FSS) and the exciton polarization angle of self-assembled quantum dots (QDs) under uniaxial stress. We show that the FSS lower bound under external stress can be predicted…

材料科学 · 物理学 2015-05-20 Ming Gong , Weiwei Zhang , Guang-Can Guo , Lixin He

Eliminating the fine structure splitting (FSS) of excitons in self-assembled quantum dots (QDs) is essential to the generation of high quality entangled photon pairs. It has been shown that the FSS has a lower bound under uniaxial stress.…

材料科学 · 物理学 2015-06-05 Jianping Wang , Ming Gong , Guang-Can Guo , Lixin He

In a charge tunable device, we investigate the fine structure splitting of neutral excitons in single long-wavelength (1.1\mu m < \lambda < 1.3 \mu m) InGaAs quantum dots as a function of external uniaxial strain. Nominal fine structure…

A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520 $\mu$eV…

材料科学 · 物理学 2007-05-23 R. Seguin , A. Schliwa , S. Rodt , K. Pötschke , U. W. Pohl , D. Bimberg

By the application of an in-plane magnetic field, we demonstrate control of the fine structure polarisation splitting of the exciton emission lines in individual InAs quantum dots. The selection of quantum dots with certain barrier…

We demonstrate that the exciton and biexciton emission energies as well as exciton fine structure splitting (FSS) in single (In,Ga)As/GaAs quantum dots (QDs) can be efficiently tuned using hydrostatic pressure in situ in an optical cryostat…

介观与纳米尺度物理 · 物理学 2015-06-16 Xuefei Wu , Hai Wei , Xiuming Dou , Kun Ding , Ying Yu , Haiqiao Ni , Zhichuan Niu , Yang Ji , Shushen Li , Desheng Jiang , Guangcan Guo , Lixin He , Baoquan Sun

The optical properties of excitons confined in initially-unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasi-uniaxial stress. To allow the validation of state-of-the-art computational tools for describing the…

The intrinsic fine structure splittings (FSSs) of the exciton states of semiconductor quantum dots (QDs) are known to be the major obstacle for realizing the QD-based entangled photon pair emitters. In this study, we present a theoretical…

介观与纳米尺度物理 · 物理学 2019-02-06 Shun-Jen Cheng , Yi Yang , Yu-Nien Wu , Yu-Huai Liao , Guan-Hao Peng

We have studied the variation in fine-structure splitting (FSS) under application of vertical electric field in a range of quantum dots grown by different methods. In each sample we confirm that this energy splitting changes linearly over…

介观与纳米尺度物理 · 物理学 2015-07-23 M. A. Pooley , A. J. Bennett , I. Farrer , D. A. Ritchie , A. J. Shields

Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-II confinement imposed by a GaAsSb…

介观与纳米尺度物理 · 物理学 2015-12-02 Vlastimil Křápek , Petr Klenovský , Tomáš Šikola

We present numerical investigations based on the Luttinger-Kohn four-band $k \cdot p$ theory and, accordingly, establish a quantitatively valid model of the excitonic fine structures of droplet epitaxial GaAs/AlGaAs quantum dots under…

介观与纳米尺度物理 · 物理学 2015-06-18 Shun-Jen Cheng , Yu-Huai Liao , Pei-Yi Lin

We investigate polarization properties of neutral exciton emission in single self-assembled InAs/GaAs quantum dots. The in-plane shape and strain anisotropy strongly couple the heavy and light hole states and lead to large optical…

介观与纳米尺度物理 · 物理学 2013-04-18 C. Tonin , R. Hostein , V. Voliotis , R. Grousson , A. Lemaitre , A. Martinez

External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole…

We use strain to statically tune the semiconductor band gap of individual InAs quantum dots (QDs) embedded in a GaAs photonic wire featuring very efficient single photon collection efficiency. Thanks to the geometry of the structure, we are…

介观与纳米尺度物理 · 物理学 2018-03-22 D. Tumanov , N. Vaish , H. A. Nguyen , Y. Curé , J. -M. Gérard , J. Claudon , F. Donatini , J. -Ph. Poizat

I present a systematic study of self-assembled InAs/InP and InAs/GaAs quantum dots single particle and many body properties as a function of quantum dot-surrounding matrix valence band offset. I use an atomistic, empirical tight-binding…

介观与纳米尺度物理 · 物理学 2013-08-30 M. Zieliński

The spin structure and spin dynamics of excitons in an ensemble of (In,Al)As/AlAs quantum dots (QDs) with type-I band alignment, containing both direct and indirect band gap dots, are studied. Time-resolved and spectral selective techniques…

介观与纳米尺度物理 · 物理学 2019-05-15 J. Rautert , T. S. Shamirzaev , S. V. Nekrasov , D. R. Yakovlev , P. Klenovský , Yu. G. Kusrayev , M. Bayer

The fine structure of the neutral exciton in a single self assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence…

介观与纳米尺度物理 · 物理学 2009-11-11 B. D. Gerardot , S. Seidl , P. A. Dalgarno , R. J. Warburton , D. Granados , J. M. Garcia , K. Kowalik , O. Krebs , K. Karrai , A. Badolato , P. M. Petroff

We show that the non-parabolic confinement potential is responsible for the non-monotonic behavior and sign change of the exciton fine-structure splitting (FSS) in optically active self-assembled quantum dots. This insight is important for…

介观与纳米尺度物理 · 物理学 2016-01-20 Erik Welander , Guido Burkard

We propose an effective model to describe the statistical properties of exciton fine structure splitting (FSS) and polarization angle of quantum dot ensembles (QDEs). We derive the distributions of FSS and polarization angle for QDEs and…

介观与纳米尺度物理 · 物理学 2015-06-16 Ming Gong , B. Hofer , E. Zallo , R. Trotta , Junwei Luo , Alex Zunger , O. G. Schmidt , Chuanwei Zhang

We investigate experimentally and theoretically the behavior of the confined dark exciton in an InAs/GaAs semiconductor quantum dot, under the application of an external magnetic field in Voigt configuration. We show that by varying the…

介观与纳米尺度物理 · 物理学 2025-04-24 Zu-En Su , Dan Cogan , Ido Schwartz , Ayal Beck , David Gershoni
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