相关论文: Approaching the Trap-Free Limit in Organic Single …
We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized…
The density of trap states in the bandgap of semiconducting organic single crystals has been measured quantitatively and with high energy resolution by means of the experimental method of temperature-dependent space-charge-limited-current…
We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has…
We have developed and applied a mobility edge model that takes into account drift and diffusion currents to characterize the space charge limited current in organic semiconductors. The numerical solution of the drift-diffusion equation…
The spectral density of localized states in the band gap of pentacene (trap DOS) was determined with a pentacene-based thin-film transistor from measurements of the temperature dependence and gate-voltage dependence of the contact-corrected…
We investigate rubrene single-crystal field-effect transistors, whose stability and reproducibility are sufficient to measure systematically the shift in threshold voltage as a function of channel length and source-drain voltage. The shift…
Research on organic thin-film transistors tends to focus on improvements in device performance, but very little is understood about the ultimate limits of these devices, the microscopic physical mechanisms responsible for their limitations,…
One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two-dimensionally in the first few molecular layers near the dielectric interface.…
The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap dominated p-type organic field-effect transistors (OFETs) has been investigated. It has been observed that the transfer of electrons into the…
We report spatially resolved optical probing of charge traps in organic field-effect transistors using focussed laser illumination. By scanning a 635 nm laser across the transistor channel and simultaneously acquiring transfer…
We have synthesized, crystallized and studied the structural and electric transport properties of organic molecular crystals based on a rubrene derivative with {\em t}-butyl sidegroups at the 5,11 positions. Two crystalline modifications…
Understanding defects in atomically thin van der Waals (vdW) semiconductors is essential for advancing their use in next-generation optoelectronic and photovoltaic devices. Here, we apply a combination of various impedance spectroscopy…
We perform a combined experimental and theoretical study of tetramethyltetraselenafulvalene (TMTSF) single-crystal field-effect transistors, whose electrical characteristics exhibit clear signatures of the intrinsic transport properties of…
A consistent and widely accepted physical basis for interpretation of charge transport in amorphous oxide semiconductor (AOS) field-effect transistors (FETs), and more generally device physics, has been hampered by uncertainties in…
Structural defects and chemical impurities exist in organic semiconductors acting as trap centers for the excited states. This work presents a novel analytical model to calculate the trapping and detrapping rates between two Gaussian…
The effects of the oxidation atmosphere and crystal faces on the interface-trap density was examined by using constant-capacitance deep-level transient spectroscopy to clarify the origin of them. By comparing the DLTS spectra of the…
We report on single crystal high mobility organic field-effect transistors (OFETs) prepared on prefabricated substrates using a "flip-crystal" approach. This method minimizes crystal handling and avoids direct processing of the crystal that…
We report on the generation of a discrete trap state during negative gate bias stress in pentacene single crystal "flip-crystal" field-effect transistors with a SiO2 gate dielectric. Trap densities of up to 2*10^12 cm^-2 were created in the…
The performance of n-type amorphous oxide semiconductor thin-film transistors (TFTs) is largely controlled by the density of states (DoS) near the conduction band mobility edge. Here, the full subgap DoS of amorphous InGaZnO (a-IGZO) TFTs,…
We establish a universal theory to understand quasiparticle Hall effects and transverse charge-carrier transport in organic semiconductors. The simulations are applied to organic crystals inspired by rubrene and cover multiple transport…