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相关论文: Doping of Bi2Te3 using electron irradiation

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Here, we report the growth and characterization of single crystals of NdxSb2-xTe3, by solid state reaction route via self-flux method. The phase and layered growth are confirmed through x-ray diffraction and Scanning electron microscopy…

材料科学 · 物理学 2021-07-27 Kapil Kumar , Yogesh Kumar , M. Singh , S. Patnaik , I. Felner , V. P. S. Awana

Carrier-independent ferromagnetism of chromium doped topological insulator $Bi_xSb_{2-x}Te_3$ thin films,which cannot be explained by current theory of dilute magnetic semiconductor, has been reported recently. To study if it is related to…

材料科学 · 物理学 2015-06-05 Bin Li , Qingyan Fan , Fuhao Ji , Zhen Liu , Hong Pan , S. Qiao

Achieving true bulk insulating behavior in Bi$_2$Se$_3$, the archetypal topological insulator with a simplistic one-band electronic structure and sizable band gap, has been prohibited by a well-known self-doping effect caused by selenium…

材料科学 · 物理学 2017-01-19 Paul Syers , Johnpierre Paglione

The experimental realization of high-temperature superconductivity in compressed hydrides H$_3$S and LaH$_{10}$ at high pressures over 150 GPa has aroused great interest in reducing the stabilization pressure of superconducting hydrides.…

超导电性 · 物理学 2021-07-21 Chongze Wang , Shuyuan Liu , Hyunsoo Jeon , Seho Yi , Yunkyu Bang , Jun-Hyung Cho

The binary chalcogenides Bi2Te3 and Bi2Se3 are the most widely studied topological insulators. Although the quantum anomalous Hall effect has recently been observed in magnetically doped Sb2Te3 this compound has been studied to a much…

介观与纳米尺度物理 · 物理学 2016-02-17 P. Sessi , O. Storz , T. Bathon , S. Wilfert , K. A. Kokh , O. E. Tereshchenko , G. Bihlmayer , M. Bode

Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron doping was made by saturating the chemisorption sites of a Si wafer with…

The introduction of magnetism in SnTe-class topological crystalline insulators is a challenging subject with great importance in the quantum device applications. Based on the first-principles calculations, we have studied the defect…

材料科学 · 物理学 2016-05-17 Wang Na , Wang Jianfeng , Si Chen , Gu Bing-Lin , Duan Wenhui

Topological insulators are emerging materials with insulating bulk and symmetry protected nontrivial surface states. One of the most fascinating transport behaviors in a topological insulator is the quantized anomalous Hall insulator, which…

We present a detailed investigation of the magnetic and structural properties of magnetically doped 3D topological insulator Bi2Se3. From muon spin relaxation measurements in zero magnetic field, we find that even 5% Fe doping on the Bi…

We propose the projected BCS wave function as the ground state for the doped Mott insulator SrCu2(BO3)2 on the Shastry-Sutherland lattice. At half filling this wave function yields the exact ground state. Adding mobile charge carriers, we…

强关联电子 · 物理学 2011-11-09 Jun Liu , Nandini Trivedi , Yongbin Lee , B. N. Harmon , Joerg Schmalian

Two-dimensional transition-metal dichalcogenides (TMDs) have attracted interest as post-Si channel candidates in transistor technology. However, despite their potential benefits, controllably doping TMDs has proven difficult. In this work,…

材料科学 · 物理学 2025-04-22 Nikhil Sivadas , Yongwoo Shin

We thoroughly investigate the effect of nonmagnetic Sn doping on the electronic and magnetic properties of antiferromagnetic topological insulator MnBi$_2$Te$_4$. We observe that Sn doping reduces the out-of-plane antiferromagnetic (AFM)…

Three-dimensional topological insulators harbour metallic surface states with exotic properties. In transport or optics, these properties are typically masked by defect-induced bulk carriers. Compensation of donors and acceptors reduces the…

介观与纳米尺度物理 · 物理学 2016-06-29 N. Borgwardt , J. Lux , I. Vergara , Zhiwei Wang , A. A. Taskin , Kouji Segawa , P. H. M. van Loosdrecht , Yoichi Ando , A. Rosch , M. Grüninger

Thus far, there is no cuprate system where both n-type and p-type charge carriers can be doped without changing the crystallographic structure. For studying the electron-hole symmetry in an identical structure, we try to dope n-type…

超导电性 · 物理学 2007-05-23 Kouji Segawa , Yoichi Ando

Two extreme members of the cobaltite series, LaCoO3 and DyCoO3, were investigated by the electrical resistivity and thermopower measurements up to 800-1000 K. Special attention was given to effects of extra holes or electrons, introduced by…

材料科学 · 物理学 2017-09-26 Z. Jirak , J. Hejtmanek , K. Knizek , M. Veverka

We report measurements of the surface Shubnikov de Haas oscillations (SdH) on crystals of the topological insulator Bi$_2$Te$_2$Se. In crystals with large bulk resistivity ($\sim$4 $\Omega$cm at 4 K), we observe $\sim$15 surface SdH…

介观与纳米尺度物理 · 物理学 2012-07-18 Jun Xiong , Yongkang Luo , YueHaw Khoo , Shuang Jia , R. J. Cava , N. P. Ong

Pressure-induced superconductivity and its relation to corresponding Hall coefficient (RH) have been reported for Bi2Te3, one of known topological insulators. A full phase diagram is presented which shows a complex dependence of the…

超导电性 · 物理学 2015-05-20 Chao Zhang , Liling Sun , Zhaoyu Chen , Xingjiang Zhou , Qi Wu , Wei Yi , Jing Guo , Xiaoli Dong , Zhongxian Zhao

High temperature superconductivity was achieved by introducing holes in a parent compound consisting of copper oxide layers separated by spacer layers. It is possible to dope some of the parent compounds with electrons, and their physical…

强关联电子 · 物理学 2015-05-19 Cedric Weber , Kristjan Haule , Gabriel Kotliar

Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling and the existence of spin-textured topological surface states which could be potentially exploited for spintronics. Here, we investigate spin…

介观与纳米尺度物理 · 物理学 2014-07-31 Mahdi Jamali , Joon Sue Lee , Yang Lv , Zhengyang Zhao , Nitin Samarth , Jian-Ping Wang

The growth and elementary properties of p-type Bi2Se3 single crystals are reported. Based on a hypothesis about the defect chemistry of Bi2Se3, the p-type behavior has been induced through low level substitutions (1 percent or less) of Ca…