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In strongly correlated transition metal dichalcogenides, an intricate interplay of polaronic distortions, stacking arrangement, and electronic correlations determines the nature of the insulating state. Here, we study the response of the…

A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…

The doping induced insulator-metal transition in $La_{1-x}Sr_{x}TiO_{3}$ is studied using the ab-initio LDA+DMFT method. Combining the LDA bandstructure for the actual, distorted structure found recently with multi-orbital DMFT to treat…

Metal-insulator transitions in a three-component Falicov-Kimball model are investigated within the Kotliar-Ruckenstein slave boson mean-field approach. The model describes a mixture of two interacting fermion atom species loaded into an…

For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…

We investigate the influence of an unoccupied band on the transport properties of a strongly correlated electron system. For that purpose, additional orbitals are coupled to a Hubbard model via hybridization. The filling is one electron per…

By means of first principles schemes based on magnetically constrained density functional theory and on the band unfolding technique we study the effect of doping on the conducting behaviour of the Lifshitz magnetic insulator NaOsO3.…

We study the effects of an orbital magnetic field on the Mott metal-insulator transition in the Hubbard-Hofstadter model. We demonstrate that sufficiently large magnetic fields induce a Mott insulator-to-metal phase transition supporting…

We have investigated the half-filling two-orbital Hubbard model on a triangular lattice by means of the dynamical mean-field theory (DMFT). The densities of states and optical conductivity clearly show the occurence of metal-insulating…

Exponentially localized surface states are the most distinctive property of a crystal with non-trivial band topology. Such surface states play a key role in characterizing topological insulators (TIs), both in theory and experiments. TIs…

We report on the first experimental observation of an apparent metal insulator transition in a 2D electron gas confined in an InAs quantum well. At high densities we find that the carrier mobility is limited by background charged impurities…

The ground-state phase diagram of the spin-one-half Falicov-Kimball model (FKM) is studied in the one dimension using small-cluster exact-diagonalization calculations. The resultant exact solutions are used to examine possibilities for…

We report the observation of a re-entrant insulator--metal--insulator transition at B=0 in a two dimensional (2D) hole gas in GaAs at temperatures down to 30mK. At the lowest carrier densities the holes are strongly localised. As the…

The Mott-Hubbard metal-insulator transition is one of the most important problems in correlated electron systems. In the past decade, much progress has been made on examining a particle-hole symmetric form of the transition in the Hubbard…

We use the Kotliar-Ruckenstein slave boson technique to treat the strong correlation of the Hubbard model. In a first part we discuss the metal to insulator transition that is occurring on the honeycomb lattice at half filling. We find the…

We present a model for the metal-insulator transition in 2D, observed in the recent years. Our starting point consists of two ingredients only, which are ubiquitous in the experiments: Coulomb interactions and weak disorder spin-orbit…

We study a range of thermodynamic properties (charge susceptibility, specific heat, entropy and spin susceptibility) of the Hubbard model on the anisotropic triangular lattice at half filling by means of the numerical finite-temperature…

The interaction-driven evolution from a Fermi liquid to a Mott insulator is a hallmark of strongly correlated fermion systems. In this work, we present a {\it numerically unbiased} study of such metal-to-insulator crossover in the…

We have observed a metal-insulator transition in an ultra-low density two dimensional hole gas formed in a high quality GaAs-AlGaAs heterostructure at B=0. At the highest carrier density studied ($p_{s}=2.2x10^{10} cm^{-2}, r_{s}=16$) the…

Epitaxial SrTi1-xVxO3 thin films with thicknesses of ~16 nm were grown on (001)-oriented LSAT substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT)…