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相关论文: Gapless metallic charge-density-wave phase driven …

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We present a comprehensive numerical investigation of the gate-induced insulator-to-metal transition in the charge-density-wave (CDW) phase of the Holstein model. Large-scale Brownian dynamics simulations are performed, in which the forces…

介观与纳米尺度物理 · 物理学 2025-12-11 Sheng Zhang , Yunhao Fan , Gia-Wei Chern

The spinless Falicov-Kimball model is one of the simplest models of many-body physics. While the conduction-electron density of states is temperature independent in the normal state, the f-electron density of states is strongly temperature…

强关联电子 · 物理学 2021-09-29 R. D. Nesselrodt , J. Canfield , J. K. Freericks

The insulator-metal transition in single crystal La(5/8-y)Pr(y)Ca(3/8)MnO3 with y=0.35 was studied using synchrotron x-ray diffraction, electric resistivity, magnetic susceptibility, and specific heat measurements. Despite the dramatic drop…

凝聚态物理 · 物理学 2009-10-31 V. Kiryukhin , B. G. Kim , V. Podzorov , S-W. Cheong , T. Y. Koo , J. P. Hill , I. Moon , Y. H. Jeong

Crystal structures of $\textrm{CLi}_4$ compounds are explored through \emph{ab} \emph{initio} evolutionary methodology. Phase transition from metal to semimetal and semiconductor, and eventually to insulator with increasing pressure are…

材料科学 · 物理学 2016-04-27 Xilian Jin , Xiao-Jia Chen , Huadi Zhang , Quan Zhuang , Kuo Bao , Dawei Zhou , Qiang Zhou , Zhi He , Bingbing Liu , Tian Cui

The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering model we are able to simulate the non-monotonic temperature…

强关联电子 · 物理学 2015-06-24 V. Senz , T. Ihn , T. Heinzel , K. Ensslin , G. Dehlinger , D. Grützmacher , U. Gennser , E. H. Hwang , S. Das Sarma

We present systematic studies of the transient dynamics of GaAs by ultrafast time-resolved optical reflectivity. In photo excited non-equilibrium states, we found a sign reverse in transient reflectivity spectra $\Delta R/R$ (t $>$ 0), from…

强关联电子 · 物理学 2018-05-25 X. C. Nie , H. Y. Liu , Xiu Zhang , Peng Gu , Hai-Ying Song , Fan Li , Jian-Qiao Meng , Yu-Xia Duin , Shi-Bing Liu

We show that an interplay of double exchange and impurity randomness can explain the competition between metal-ferromagnetic and insulating charge ordered states in doped manganites. The double exchange is simplified in the Ising type,…

强关联电子 · 物理学 2016-04-18 Van-Nham Phan , Quoc-Huy Ninh , Minh-Tien Tran

A numerical diagonalization technique with canonical Monte-Carlo simulation algorithm is used to study the phase transitions from low temperature (ordered) phase to high temperature (disordered) phase of spinless Falicov-Kimball model on a…

强关联电子 · 物理学 2015-03-20 Umesh K. Yadav , T. Maitra , Ishwar Singh

The Mott insulator Ca$_2$RuO$_4$ exhibits a rare insulator-to-metal transition (IMT) induced by DC current. While structural changes associated with this transition have been tracked by neutron diffraction, Raman scattering, and x-ray…

Heavy fermion materials naturally combine strong spin-orbit interactions and electronic correlations. When there is precisely one conduction electron per impurity spin, the coherent heavy fermion state is insulating. This Kondo insulating…

强关联电子 · 物理学 2013-07-12 Jan Werner , Fakher F. Assaad

Physics based numerical simulation has been carried out to probe the sub-gap density of states (DOS) and underlying electron transport properties of amorphous oxide based thin film transistors (TFTs). The DOS model of TFTs consists of…

应用物理 · 物理学 2024-02-15 D. Saha , Sachin Kulkarni

We have studied the metallic behaviour in low density GaAs hole systems, and Si electron systems, close to the apparent two-dimensional metal-insulator transition. Two observations suggest a semi-classical origin for the metallic-like…

强关联电子 · 物理学 2009-10-31 A. R. Hamilton , M. Y. Simmons , M. Pepper , D. A. Ritchie

Based on recent experiments, we describe the Mott insulating, but undimerized state of $TiOCl$ using the local-density approximation combined with multi-orbital dynamical mean field theory (LDA+DMFT) for this $3d^{1}$ system.Good agreement…

强关联电子 · 物理学 2007-05-23 L. Craco , M. S. Laad , E. Müller-Hartmann

Ca$_2$FeMnO$_6$ (CFMO) double perovskite was studied using first principles density functional theory and tight-binding (TB) Hamiltonian modeling using extended Hubbard model. We have shown by electronic structure analysis that charge- and…

材料科学 · 物理学 2024-03-06 Arindam Sarkar , Hrishit Banerjee , Debashish Das , Prashant Singh , Aftab Alam

Within the framework of a mean-field approach the Mott-Hubbard phase transition is considered in the Hubbard and Falicov-Kimball models for half-filled occupation. It is shown that a static Z_2-field forms an insulator state on the lattice…

强关联电子 · 物理学 2022-05-25 Igor N. Karnaukhov

When atoms are loaded into an optical lattice, the process of gradually turning on the lattice is almost adiabatic. In this paper we investigate how the temperature changes when going from the gapless superfluid phase to the gapped Mott…

统计力学 · 物理学 2010-09-10 Lode Pollet , Corinna Kollath , Kris Van Houcke , Matthias Troyer

In solids, strong repulsion between electrons can inhibit their movement and result in a "Mott" metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how…

A new two-pole approximation, which allows to describe the transition from an insulating state to a metallic one at increase of bandwidth, and also the observable in some compounds transition from a metalic state to an insulating one with…

强关联电子 · 物理学 2007-05-23 Leonid Didukh

The extended Falicov-Kimball model is analyzed exactly in the ground state at half filling in the limit of large dimensions. In the model the on-site and the intersite density-density interactions between all particles are included. We…

强关联电子 · 物理学 2019-07-03 Romuald Lemański , Konrad Jerzy Kapcia , Stanisław Robaszkiewicz

We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical…

材料科学 · 物理学 2017-10-11 F. Liu , S. Prucnal , Y. Berencén , Z. Zhang , Y. Yuan , Y. Liu , R. Heller , R. Boettger , L. Rebohle , W. Skorupa , M. Helm , S. Zhou