中文
相关论文

相关论文: Gapless metallic charge-density-wave phase driven …

200 篇论文

The temperature dependence of the excitation spectrum in NaOsO$_{\text{3}}$ through its metal-to-insulator transition (MIT) at 410 K has been investigated using resonant inelastic X-ray scattering (RIXS) at the Os L$_{\text{3}}$ edge. High…

A major challenge in condensed matter physics is integrating topological phenomena with correlated electron physics to leverage both types of states for next-generation quantum devices. Metal-insulator transitions (MITs) are central to…

We study structurally-triggered metal-insulator transition in CaCu$_3$Fe$_4$O$_{12}$ by means of local density approximation (LDA) +$U$ and LDA+dynamical mean-field theory (DMFT). The ferrimagnetic insulating phase is essentially the same…

强关联电子 · 物理学 2024-09-30 Atsushi Hariki , Tatsuya Yamaguchi , Mathias Winder , Jan Kuneš

We study the dimensional dependence of the interplay between correlation and disorder in two dimension at half filling using 2D $t-t'$ disordered Hubbard model with deterministic disorder both at zero and finite temperatures. Inclusion of…

强关联电子 · 物理学 2015-05-13 Tribikram Gupta , Sanjay Gupta

The magnetotransport in single layer graphene has been experimentally investigated in magnetic fields up to 18 T as a function of temperature. A pronounced T-dependence is observed for T < 50 K, which is either metallic, or insulating,…

介观与纳米尺度物理 · 物理学 2010-07-28 L. Zhang , Y. Zhang , M. Khodas , T. Valla , I. A. Zaliznyak

We report on a zero magnetic field transport study of a two-dimensional, variable-density, hole system in GaAs. As the density is varied we observe, for the first time in GaAs-based materials, a crossover from an insulating behavior at…

介观与纳米尺度物理 · 物理学 2016-08-31 Y. Hanein , U. Meirav , D. Shahar , C. C. Li , D. C. Tsui , Hadas Shtrikman

Iron oxide is a key compound to understand the state of the deep Earth. It has been believed that previously known oxides such as FeO and Fe2O3 will be dominant at the mantle conditions. However, recent observation of FeO2 shed another…

强关联电子 · 物理学 2017-03-01 Bo Gyu Jang , Duck Young Kim , Ji Hoon Shim

We report the Sr substitution effect in an antiferromagnetic insulator LaMnAsO. The Sr doping limit is $x\sim$ 0.10 under the synthesis conditions, as revealed by x-ray diffractions indicate. Upon Sr doping, the room-temperature resistivity…

强关联电子 · 物理学 2012-05-10 Yunlei Sun , Jinke Bao , Chunmu Feng , Zhu'an Xu , Guanghan Cao

Insulator-metal transition is investigated self-consistently on the frustrated Shastry-Sutherland lattice in the framework of Slave-Boson mean-field theory. Due to the presence of quasi-flat band structure characteristic, the system…

强关联电子 · 物理学 2019-10-08 Huai-Xiang Huang , Jing Chen , Wei Ren , Yi Gao , Wei Li , Yan Chen

The electronic density of states (DOS) of La$_{0.625}$Ca$_{0.375}$MnO$_3$(LCMO) strain free epitaxial thin films with an insulator-metal transition temperature (T$_{IM}$) of 250 K was probed using variable temperature scanning tunneling…

强关联电子 · 物理学 2008-10-07 Udai Raj Singh , S. Chaudhuri , R. C. Budhani , Anjan K. Gupta

We show that the pressure-induced metal-insulator transition (MIT) in LaMnO$_3$ is fundamentally different from the Mott-Hubbard transition and is percolative in nature, with the measured resistivity obeying the percolation scaling laws.…

强关联电子 · 物理学 2016-01-14 M. Sherafati , M. Baldini , L. Malavasi , S. Satpathy

The effect of 16O-18O isotope exchange on the electric resistivity was studied for (La(1-y)Pr(y))0.7Ca0.3MnO3 ceramic samples. Depending on y, this mixed perovskite exhibited different types of low-temperature behavior ranging from…

An influence of the localization of itinerant electrons induced by correlated hopping on the electronic charge and heat transport is discussed for the lightly doped Mott insulator phase of the Falicov-Kimball model. The case of strongly…

强关联电子 · 物理学 2020-03-05 D. A. Dobushovskyi , A. M. Shvaika

Variable temperature scanning tunneling microscopy/spectroscopy studies on single crystals and epitaxial thin films of hole-doped manganites, which show colossal magnetoresistance, have been done. We have investigated the variation of the…

强关联电子 · 物理学 2009-10-31 Amlan Biswas , Suja Elizabeth , A. K. Raychaudhuri , H. L. Bhat

Electron tunneling measurements of the density of states (DOS) in ultra-thin Be films reveal that a correlation gap mediates their insulating behavior. In films with sheet resistance $R<5000\Omega$ the correlation singularity appears as the…

强关联电子 · 物理学 2009-10-31 V. Yu. Butko , J. F. DiTusa , P. W. Adams

We use a random gap model to describe a metal-insulator transition in three-dimensional semiconductors due to doping and find a conventional phase transition, where the effective scattering rate is the order parameter. Spontaneous symmetry…

无序系统与神经网络 · 物理学 2019-11-04 K. Ziegler

The correlation-driven metal-insulator transition (MIT) of BaVS$_3$ was studied by polarized infrared spectroscopy. In the metallic state two types of electrons coexist at the Fermi energy: The quasi 1D metallic transport of $A_{1g}$…

强关联电子 · 物理学 2014-01-15 I. Kezsmarki , G. Mihaly , R. Gaal , N. Barisic , A. Akrap , H. Berger , L. Forro , C. C. Homes , L. Mihaly

The zero-field temperature-dependence of the resistivity of two-dimensional holes are observed to exhibit two qualitatively different characteristics for a fixed carrier density for which only the metallic behavior of the so-called…

强关联电子 · 物理学 2007-12-20 Jian Huang , J. S. Xia , D. C. Tsui , L. N. Pfeiffer , K. W. West

The spinless Falicov-Kimball model is solved exactly in the limit of infinite-dimensions on both the hypercubic and Bethe lattices. The competition between segregation, which is present for large U, and charge-density-wave order, which is…

强关联电子 · 物理学 2009-10-31 J. K. Freericks , R. Lemanski

The temperature dependence of the number density of elementary excitations in a semiconductor with account for the temperature dependence of the band gap is obtained. A local lattice distortion within a crystalline domain is discussed.

统计力学 · 物理学 2009-02-26 Fedor V. Prigara