相关论文: 1/f noise in graphene
Low-frequency $1/f^{\gamma}$ noise is ubiquitous, even in high-end electronic devices. For qubits such noise results in decrease of their coherence times. Recently, it was found that adsorbed O$_2$ molecules provide the dominant…
We have measured the low-frequency resistance fluctuations (1 mHz<f<10 Hz) in Ag nanowires of diameter 15 nm<d<200 nm at room temperatures. The power spectral density (PSD) of the fluctuations has a 1/f^{\alpha} character as seen in…
Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2…
High mobility single and few-layer graphene sheets are in many ways attractive as nanoelectronic circuit hosts but lack energy gaps, which are essential to the operation of field-effect transistors. One of the methods used to create gaps in…
1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range where short-channel FETs are required, velocity saturation (VS)…
The 1/f noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral…
We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using…
The recent discovery of methods to isolate graphene, a one-atom-thick layer of crystalline carbon, has raised the possibility of a new class of nano-electronics devices based on the extraordinary electrical transport and unusual physical…
We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge…
We have investigated shot noise and conductance of multi-terminal graphene nanoribbon devices at temperatures down to 50 mK. Away from the charge neutrality point, we find a Fano factor $F \approx 0.4$, nearly independent of the charge…
We report on transport properties of monolayer graphene with a laterally modulated potential profile, employing striped top gate electrodes with spacings of 100 nm to 200 nm. Tuning of top and back gate voltages gives rise to local charge…
A theoretical study of the magnetoelectronic properties of zigzag and armchair bilayer graphene nanoribbons (BGNs) is presented. Using the recursive Green's function method, we study the band structure of BGNs in uniform perpendicular…
We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and…
Nanoelectromechanical systems (NEMS) constitute a class of devices lying at the interface between fundamental research and technological applications. Integrating novel materials such as graphene into NEMS allows studying their mechanical…
We present non-linear transport measurements on suspended, current annealed bilayer graphene devices. Using a multi-terminal geometry we demonstrate that devices tend to be inhomogeneous and host two different electronic phases next to each…
Low-frequency 1/f noise in electronics is a conductance fluctuation, that has been expressed in terms of a mobility "$\alpha$-noise" by Hooge and Kleinpenning. Understanding this noise in graphene is a key towards high-performance…
The intrinsic channel properties of monolayer and multilayer graphene were systematically investigated as a function of layer number by the exclusion of contact resistance using four-probe measurements. We show that the continuous change in…
We measured the low frequency (10mHz < f < 10Hz) resistance fluctuations (Noise) in single crystalline ferromagnetic Ni nanowires (diameter ~35nm) in the temperature range 80K-300K. The noise spectral power shows 1/f dependence. The…
We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO$_2$ substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when…
We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The…