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Phase change alloys are used for non-volatile random access memories exploiting the conductivity contrast between amorphous and metastable, crystalline phase. However, this contrast has never been directly related to the electronic band…

Scanning tunneling microscopy and transport measurements have been performed to investigate the electronic structure and its temperature dependence in heavily Sr and Na codoped PbTe, which is recognized as one of the most promising…

The bulk band structure of the topological insulator \sbte~ is investigated by angle-resolved photoemission spectroscopy. Of particular interest is the dispersion of the uppermost valence band with respect to the topological surface state…

The recent discovery of a topological phase transition in IV-VI narrow-gap semiconductors has revitalized the decades-old interest in the bulk band inversion occurring in these materials. Here we systematically study the (001) surface…

Topological materials ranging from topological insulators to semimetals host many novel quantum phenomena including quantum spin Hall effect and topological Fermi arcs. Transitions between these topological phases have attracted much…

介观与纳米尺度物理 · 物理学 2026-04-21 Changcang Qiao , Chen-Chia Hsu , Tao Zhang , Zhiming Sun , Dong Qian , Yang-hao Chan , Peng Chen

Understanding the mechanism of ferromagnetism in ferromagnetic topological insulators (TIs) is a key to realize exotic time-reversal-symmetry-broken quantum phases. However, electronic states relevant to the ferromagnetism are highly…

The diamond and zinc-blende semiconductors are well-known and have been widely studied for decades. Yet, their electronic structure still surprises with unexpected topological properties of the valence bands. In this joint theoretical and…

We present an angle-resolved photoemission spectroscopy study of the electronic structure of SnTe, and compare the experimental results to ab initio band structure calculations as well as a simplified tight-binding model of the p-bands. Our…

We report a detailed experimental study of the band structure of the recently discovered topological material $\textrm{Hf}_{2}\textrm{Te}_2\textrm{P}$. Using the combination of scanning tunneling spectroscopy and angle-resolved…

FeSe${}_{0.45}$Te${}_{0.55}$ (FeSeTe) has recently emerged as a promising candidate to host topological superconductivity, with a Dirac surface state and signatures of Majorana bound states in vortex cores. However, correlations strongly…

For materials near the phase boundary between weak and strong topological insulators (TIs), their band topology depends on the band alignment, with the inverted (normal) band corresponding to the strong (weak) TI phase. Here, taking the…

介观与纳米尺度物理 · 物理学 2020-07-29 Y. Jiang , J. Wang , T. Zhao , Z. L. Dun , Q. Huang , X. S. Wu , M. Mourigal , H. D. Zhou , W. Pan , M. Ozerov , D. Smirnov , Z. Jiang

HgTe is a versatile topological material and has enabled the realization of a variety of topological states, including two- and three-dimensional (3D) topological insulators and topological semimetals. Nevertheless, a quantitative…

Ternary (Bi1-xSbx)2Te3 films with an Sb content between 0 and 100% were deposited on a Si(111) substrate by means of molecular beam epitaxy. X-ray diffraction measurements confirm single crystal growth in all cases. The Sb content is…

Based on the ab initio calculations, we show that MoTe2, in its low-temperature orthorhombic structure characterized by an X-ray diffraction study at 100 K, realizes 4 type-II Weyl points between the N-th and N+1-th bands, where N is the…

We have studied the magnetotransport properties of the metallic, p-type Sb2Te2Se which is a topological insulator. Magnetoresistance shows Shubnikov de Haas oscillations in fields above B=15 T. The maxima/minima positions of oscillations…

介观与纳米尺度物理 · 物理学 2017-02-08 K. Shrestha , V. Marinova , D. Graf , B. Lorenz , C. W. Chu

Complex materials encompassing different phases of matter can display new photoinduced metastable states differing from those attainable under equilibrium conditions. These states can be realized when energy is injected in the material…

The phase transition from a topological insulator to a trivial band insulator is studied by angle-resoled photoemission spectroscopy on Bi$_{2-x}$In$_{x}$Se$_{3}$ single crystals. We first report the complete evolution of the bulk band…

Scanning tunneling microscopy (STM) and spectroscopy (STS) in combination with density functional theory (DFT) calculations are employed to study the surface and subsurface properties of the metastable phase of the phase change material…

Using high-resolution angle-resolved photoemission spectroscopy, the electronic structure near the Fermi level and the topological property of the Bi(111) films grown on the Bi$_2$Te$_3$(111) substrate were studied. Very different from the…

材料科学 · 物理学 2016-03-03 Meng-Yu Yao , Fengfeng Zhu , Lin Miao , C. Q. Han , Fang Yang , D. D. Guan , C. L. Gao , Canhua Liu , Dong Qian , Jin-feng Jia

From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to…

介观与纳米尺度物理 · 物理学 2020-10-20 J. Gospodaric , V. Dziom , A. Shuvaev , A. A. Dobretsova , N. N. Mikhailov , Z. D. Kvon , E. G. Novik , A. Pimenov
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