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The electron-hole correlation length serves as an intrinsic length scale for analyzing excitonic interactions in semiconductor nanoparticles. In this work, the derivation of electron-hole correlation length using the two-particle reduced…

原子与分子团簇 · 物理学 2014-06-03 Christopher J. Blanton , Arindam Chakraborty

The effect of external electric field on electron-hole correlation in GaAs quantum dots is investigated. The electron-hole Schrodinger equation in the presence of external electric field is solved using explicitly correlated full…

化学物理 · 物理学 2013-02-06 Christopher J. Blanton , Christopher Brenon , Arindam Chakraborty

Cd(Se,Te) Quantum Dots (QD) in ZnSe barrier typically exhibit a very high spectral density, which precludes investigation of single dot photoluminescence. We design, grow and study individual Cd(Se,Te)/ZnSe QDs of low spectral density of…

The fast nonradiative decay of multiexcitonic states via Auger recombination is a fundamental process affecting a variety of applications based on semiconductor nanostructures. From a theoretical perspective, the description of Auger…

介观与纳米尺度物理 · 物理学 2018-12-26 John P. Philbin , Eran Rabani

The radiative recombination rates of interacting electron-hole pairs in a quantum dot are strongly affected by quantum correlations among electrons and holes in the dot. Recent measurements of the biexciton recombination rate in single…

介观与纳米尺度物理 · 物理学 2008-06-17 Michael Wimmer , S. V. Nair , J. Shumway

Exciton luminescence of a CdSe quantum dot (QD) inserted in a ZnSe nanowire is strongly influenced by the dark exciton states. Because of the small size of these QDs (2-5nm), exchange interaction between hole and electron is highly enhanced…

The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect gap material, and InAs and CdSe as examples of typical III-V and II-VI…

凝聚态物理 · 物理学 2009-10-31 Seungwon Lee , Lars Jonsson , John W. Wilkins , Garnett W. Bryant , Gerhard Klimeck

The optical spectra of CdSe nanocrystals up to 55 A in diameter are analyzed in a wide range of energies from the fine structure of the low-energy excitations to the so-called high-energy transitions. We apply a symmetry-based method in two…

介观与纳米尺度物理 · 物理学 2009-11-07 J. Perez-Conde , A. K. Bhattacharjee

Because of their conveniently tunable optoelectronic properties, semiconductor nanocrystals have become established components for new devices and emergent technologies, in a broad range of applications which include agriculture, medicine,…

介观与纳米尺度物理 · 物理学 2024-10-01 Carlos A. Bohórquez-Quincos , Julián G. Cordero-Niño , Hanz Y. Ramírez-Gómez

We present results on the charge dependence of the radiative recombination lifetime, Tau, and the emission energy of excitons confined to single self-assembled InGaAs quantum dots. There are significant dot-to-dot fluctuations in the…

Electron-hole correlation in quantum-dot quantum wells (QDQW's) is investigated by incorporating Coulomb and exchange interactions into an empirical tight-binding model. Sufficient electron and hole single-particle states close to the band…

材料科学 · 物理学 2009-11-10 Rui-Hua Xie , Garnett W. Bryant , Seungwon Lee , W. Jaskolski

The recombination of electron-hole pairs injected in extended conjugated systems is modeled as a multi-pathway vibron-driven relaxation in monoexcited state-space. The computed triplet-to-singlet ratio of exciton formation times $r =…

材料科学 · 物理学 2009-11-07 Stoyan Karabunarliev , Eric. R. Bittner

Theory of electronic and optical properties of exciton and bi-exciton complexes confined in CdSe spherical nanocrystals is presented. The electron and hole states are computed using atomistic $sp^3d^5s^*$ tight binding Hamiltonian including…

介观与纳米尺度物理 · 物理学 2015-05-20 Marek Korkusinski , Oleksandr Voznyy , Pawel Hawrylak

We develop a general theory of electron--hole recombination in organic light emitting diodes that leads to formation of emissive singlet excitons and nonemissive triplet excitons. We briefly review other existing theories and show how our…

材料科学 · 物理学 2009-11-07 K. Tandon , S. Ramasesha , S. Mazumdar

The multiplication rates of hot carriers in CdSe quantum dots are quantified using an atomistic pseudopotential approach and first order perturbation theory. Both excited holes and electrons are considered, and electron-hole Coulomb…

介观与纳米尺度物理 · 物理学 2015-05-13 Zhibin Lin , Alberto Franceschetti , Mark T. Lusk

Excitonic spectra are calculated for free-standing, surface passivated InAs quantum dots using atomic pseudopotentials for the single-particle states and screened Coulomb interactions for the two-body terms. We present an analysis of the…

材料科学 · 物理学 2009-10-31 A. J. Williamson , Alex Zunger

Magneto-electrical measurements were performed on diodes and bulk heterojunction solar cells (BHSCs) to clarify the role of formation of coulombically bound electron-hole (e-h) pairs on the magnetoresistance (MR) response in organic thin…

Excitonic effects in optical spectra and electron-hole pair excitations are described by solutions of the Bethe-Salpeter equation (BSE) that accounts for the Coulomb interaction of excited electron-hole pairs. Although for the computation…

其他凝聚态物理 · 物理学 2008-08-20 F. Fuchs , C. Rödl , A. Schleife , F. Bechstedt

We discuss, from a theoretical point of view, excitonic phases at the pressure induced semiconductor-semimetal transition in $\rm TmSe_{0.45}Te_{0.55}$,focusing, in particular, on the stability against an electron-hole liquid. The…

强关联电子 · 物理学 2008-01-08 Franz X. Bronold , Holger Fehske , Gerd Roepke

We have used magneto-photoluminescence measurements to establish that InP/GaAs quantum dots have a type-II (staggered) band alignment. The average excitonic Bohr radius and the binding energy are estimated to be 15nm and 1.5 meV…

介观与纳米尺度物理 · 物理学 2015-05-14 Bhavtosh Bansal , S. Godefroo , M. Hayne , G. Medeiros- Ribeiro , V. V. Moshchalkov
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