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相关论文: Topological Surface Transport in Epitaxial SnTe Th…

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We report molecular beam epitaxial growth of a SnTe (111) layer on a CdTe template, fabricated by depositing it on a GaAs (111)A substrate, instead of BaF$_2$ which has been conventionally used as a substrate. By optimizing temperatures for…

材料科学 · 物理学 2016-09-21 Ryo Ishikawa , Tomonari Yamaguchi , Yusuke Ohtaki , Ryota Akiyama , Shinji Kuroda

The superconductor Sn$_{1-x}$In$_{x}$Te is derived from the topological crystalline insulator SnTe and is a candidate topological superconductor. So far, high-quality thin films of this material have not been available, even though such…

材料科学 · 物理学 2019-10-22 Andrea Bliesener , Junya Feng , A. A. Taskin , Yoichi Ando

Magneto-transport properties of (111)-oriented single-crystal thin films of SnTe were investigated. SnTe (111) thin films were epitaxially grown on a BaF2 substrate by molecular beam epitaxy. By optimizing the growth conditions and the…

介观与纳米尺度物理 · 物理学 2015-12-22 Ryota Akiyama , Kazuki Fujisawa , Tomonari Yamaguchi , Shinji Kuroda

SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have cubic rock-salt structure, they grow along [001] crystallographic direction and have four sidewalls…

材料科学 · 物理学 2018-12-24 J. Sadowski , P. Dziawa , A. Kaleta , B. Kurowska , A. Reszka , T. Story , S. Kret

The massless Dirac fermions residing on the surface of three-dimensional topological insulators are protected from backscattering and cannot be localized by disorder, but such protection can be lifted in ultrathin films when the…

介观与纳米尺度物理 · 物理学 2015-06-04 A. A. Taskin , Satoshi Sasaki , Kouji Segawa , Yoichi Ando

High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were…

We use real-time reflection high energy electron diffraction intensity oscillation to establish the Te-rich growth dynamics of topological insulator thin films of Bi2Te3 on Si(111) substrate by molecular beam epitaxy. In situ angle resolved…

The tunability of the chemical potential for a wide range encompassing the Dirac point is important for many future devices based on topological insulators. Here we report a method to fabricate highly efficient top gates on epitaxially…

介观与纳米尺度物理 · 物理学 2015-06-19 Fan Yang , A. A. Taskin , Satoshi Sasaki , Kouji Segawa , Yasuhide Ohno , Kazuhiko Matsumoto , Yoichi Ando

SnTe is a prototypical topological crystalline insulator, in which the gapless surface state is protected by a crystal symmetry. The hallmark of the topological properties in SnTe is the Dirac cones projected to the surfaces with mirror…

Ternary (Bi1-xSbx)2Te3 films with an Sb content between 0 and 100% were deposited on a Si(111) substrate by means of molecular beam epitaxy. X-ray diffraction measurements confirm single crystal growth in all cases. The Sb content is…

Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe $\{111\}$ thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation, has a…

We report epitaxial growth of $\beta$-Ag2Te thin films by molecular beam epitaxy. $\beta$-Ag2Te, recently identified as a topological insulator, was grown by depositing Ag on InP substrate at room temperature followed by Te supply at…

材料科学 · 物理学 2026-03-17 Ayuki Takegawa , Kouya Imoto , Minoru Kawamura , Moeta Tsukamoto , Ryutaro Yoshimi

Topological materials are derived from the interplay between symmetry and topology. Advances in topological band theories have led to the prediction that the antiperovskite oxide Sr$_3$SnO is a topological crystalline insulator, a new…

Epitaxial thin films of (Sn$_{x}$Pb$_{1-x}$)$_{1-y}$In$_{y}$Te were successfully grown by molecular-beam-epitaxy (MBE) in a broad range of compositions (0 $\leq$ x $\leq$ 1, 0 $\leq$ y $\leq$ 0.23). We investigated electronic phases of the…

SnTe is a topological crystalline insulator that possesses spin-polarized, Dirac-dispersive surface states protected by crystal symmetry. Multiple surface states exist on the {100}, {110}, and {111} surfaces of SnTe, with the band structure…

介观与纳米尺度物理 · 物理学 2015-06-22 Jie Shen , Yeonwoong Jung , Ankit S. Disa , Fred J. Walker , Charles H. Ahn , Judy J. Cha

We employed graphene as a patternable template to protect the intrinsic surface states of thin films of topological insulators (TIs) from environment. Here we find that the graphene provides high-quality interface so that the Shubnikov de…

(Bi1-xSbx)2Se3 thin films have been prepared using molecular beam epitaxy (MBE). We demonstrate the angle-resolved photoemission spectroscopy (ARPES) and transport evidence for the existence of strong and robust topological surface states…

介观与纳米尺度物理 · 物理学 2016-11-28 Y. Hung Liu , C. Wei Chong , W. Chuan Chen , J. C. A. Huang , C. -Maw Cheng , K. -Ding Tsuei , Z. Li , H. Qiu , V. V. Marchenkov

Several small-bandgap semiconductors are now known to have protected metallic surface states as a consequence of the topology of the bulk electron wavefunctions. The known "topological insulators" with this behavior include the important…

介观与纳米尺度物理 · 物理学 2013-01-01 Pouyan Ghaemi , Roger Mong , Joel E. Moore

Topological crystalline insulators (TCI) are unique systems where a band inversion that is protected by crystalline mirror symmetry leads to a multiplicity of topological surface states. Binary SnTe is an attractive lead-free TCI compound;…

Topological insulators represent a novel state of matter with surface charge carriers having a massless Dirac dispersion and locked helical spin polarization. Many exciting experiments have been proposed by theory, yet, their execution have…

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